A semiconductor substrate includes a base substrate, a mask layer including an opening portion and a mask portion, and a GaN-based semiconductor layer that includes a GaN-based semiconductor. The GaN-based semiconductor layer includes: a first portion located on the mask portion; and a second portion that is located on the opening portion and has a lower dislocation density of non-threading dislocations in a cross section of the GaN-based semiconductor layer taken along a thickness direction than the first portion.

The present application provides a method for a manufacturing semiconductor structure and a semiconductor growth device. The semiconductor growth device includes: a reaction chamber; a growth main pipe, where an end of the growth main pipe is connected to the reaction chamber; a vent main pipe; a first mixing main pipe to an M.sup.th mixing main pipe, where M is an integer greater than or equal to 1; a first reaction gas source group to an N.sup.th reaction gas source group, where N is an integer greater than or equal to 2; a first switching valve group to an N.sup.th switching valve group, where a k.sup.th switching valve group is adapted for controlling transport of gas from a k.sup.th reaction gas source group to a j.sup.th mixing main pipe, k is an integer greater than or equal to 1 and less than or equal to N, and j is an integer greater than or equal to 1 and less than or equal to M; and a first growth vent switching valve to an M.sup.th growth vent switching valve, where a j.sup.th growth vent switching valve is adapted for switching the gas in the j.sup.th mixing main pipe to be transported to the growth main pipe or the vent main pipe. The use of the semiconductor growth device helps to improve the steepness of an interface in a growth process of a semiconductor structure.

A method of making GaP window slabs having largest dimensions of greater than 4 inches and GaAs IR window slabs having largest dimensions of greater than 8 inches, includes slicing and dicing at least one smaller GaAs or GaP single crystal boule, which can be a commercial boule, to form a plurality of rectangular slabs. The slabs are ground to have precisely perpendicular edges, which are polished to be ultra-flat and ultra-smooth, for example to a flatness of at least ?/10, and a roughness Ra of less than 10 nanometers. The slab edges are then aligned and fused via optical-contacting/bonding to create a large GaAs or GaP slab having negligible bond interface losses. A conductive, doped GaAs or GaP layer can be applied to the window for EMI shielding in a subsequent vacuum deposition step, followed by applying anti-reflection (AR) coatings to one or both of the slab faces.

Disclosed is a method of providing a constant concentration of a metal-containing precursor compound in the vapor phase in a carrier gas. Such method is particularly useful in supplying a constant concentration of a gaseous metal-containing compound to a plurality of vapor deposition reactors.

A vapor phase growth rate measuring apparatus has an initial parameter setting adjuster to set initial values of fitting parameters, a refractive index of each thin film to be formed on the substrate, a growth rate of each thin film, and at least one parameter having temperature dependence, a film thickness calculator to calculate a film thickness of each thin film, a parameter selector to select a value in accordance with a growth temperature for the parameter, a reflectometer to measure a reflectance of the substrate, a reflectance calculator to calculate a reflectance of the substrate, an error calculator to calculate an error between the calculated reflectance and an actual measurement value of the reflectance measured at a plurality of times, a parameter changer to change at least a part of the values of the fitting parameters, and an output value generator to generate characteristic values of each thin film.

Embodiments related to emissive display device structures having an emissive display element and a metamaterial lens having a plurality of nanoparticles over an emissive surface of the emissive display element to control the angular distribution of light emitted from the emissive display element, displays having such controlled emissive display device structures, systems incorporating such controlled emissive display device structures, and methods for fabricating them are discussed.

Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More specifically, implementations disclosed herein relate to apparatus, systems, and methods for reducing substrate outgassing. A substrate is processed in an epitaxial deposition chamber for depositing an arsenic-containing material on a substrate and then transferred to a degassing chamber for reducing arsenic outgassing on the substrate. The degassing chamber includes a gas panel for supplying hydrogen, nitrogen, and oxygen and hydrogen chloride or chlorine gas to the chamber, a substrate support, a pump, and at least one heating mechanism. Residual or fugitive arsenic is removed from the substrate such that the substrate may be removed from the degassing chamber without dispersing arsenic into the ambient environment.

A method for depositing layers containing a group five element on a substrate, in which process gas is fed into a process chamber. After depositing the layer, the process chamber is cleaned as follows. The process chamber is heated to a first cleaning temperature. After reaching the first cleaning temperature, a halogen or a halogen compound is fed into the process chamber in a first cleaning step. After the first cleaning step, the process chamber is brought to a second cleaning temperature. After reaching the second cleaning temperature, O.sub.2 is fed into the process chamber in a second cleaning step. After the second cleaning step, the process chamber is brought to a third cleaning temperature. After reaching the third cleaning temperature, substantially only H.sub.2 is fed into the process chamber in a third cleaning step. After the third cleaning step, the process chamber is cooled.

Embodiments include systems and methods for producing semiconductor wafers having reduced quantities of point defects. These systems and methods include a tunable ultraviolet (UV) light source, which is controlled to produce a raster of a UV light beam across a surface of a semiconductor wafer during epitaxial growth to dissociate point defects in the semiconductor wafer. In various embodiments, the tunable UV light source is configured external to a Metal Organic Chemical Vapor Deposition (MOCVD) chamber and controlled such that the UV light beam is directed though a window defined in a wall of the MOCVD chamber.

A gas phase nanowire growth apparatus including a reaction chamber (200), a first input and a second input (202 B, 202 A). The first input is located concentrically within the second input and the first and second input are configured such that a second fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber. An aerosol of catalyst particles may be used to grow the nanowires