A multi-deposition chamber apparatus is provided that includes a first deposition chamber that includes a substrate holder, a retractable sputter gun, a gate valve, an output port, a retractable chamber separator, a gas input port, a gas output port, and an electron cyclotron resonance plasma source, where the retractable chamber separator is configured to selectively segment the first deposition chamber to form a second deposition chamber, where the second deposition chamber comprises the substrate holder, the gas input port, the gas output port and the electron cyclotron resonance plasma source.

A multi-deposition chamber apparatus is provided that includes a first deposition chamber that includes a substrate holder, a retractable sputter gun, a gate valve, an output port, a retractable chamber separator, a gas input port, a gas output port, and an electron cyclotron resonance plasma source, where the retractable chamber separator is configured to selectively segment the first deposition chamber to form a second deposition chamber, where the second deposition chamber comprises the substrate holder, the gas input port, the gas output port and the electron cyclotron resonance plasma source.

A nitride semiconductor template includes a heterogeneous substrate, a first nitride semiconductor layer that is formed on one surface of the heterogeneous substrate, includes a nitride semiconductor and has an in-plane thickness variation of not more than 4.0%, and a second nitride semiconductor layer that is formed on an annular region including an outer periphery of an other surface of the heterogeneous substrate, includes the nitride semiconductor and has a thickness of not less than 1 μm.

A nitride semiconductor template includes a heterogeneous substrate, a first nitride semiconductor layer that is formed on one surface of the heterogeneous substrate, includes a nitride semiconductor and has an in-plane thickness variation of not more than 4.0%, and a second nitride semiconductor layer that is formed on an annular region including an outer periphery of an other surface of the heterogeneous substrate, includes the nitride semiconductor and has a thickness of not less than 1 μm.

A plasma-enhanced chemical vapor deposition apparatus for depositing a lithium (Li)-based film on a surface of a substrate includes a reaction chamber, in which the substrate is disposed; a first source supply configured to supply a Li source material into the reaction chamber; a second source supply configured to supply phosphor (P) and oxygen (O) source materials and a nitrogen (N) source material into the reaction chamber; a power supply configured to supply power into the reaction chamber to generate plasma in the reaction chamber; and a controller configured to control the power supply to turn on or off generation of the plasma.

A plasma-enhanced chemical vapor deposition apparatus for depositing a lithium (Li)-based film on a surface of a substrate includes a reaction chamber, in which the substrate is disposed; a first source supply configured to supply a Li source material into the reaction chamber; a second source supply configured to supply phosphor (P) and oxygen (O) source materials and a nitrogen (N) source material into the reaction chamber; a power supply configured to supply power into the reaction chamber to generate plasma in the reaction chamber; and a controller configured to control the power supply to turn on or off generation of the plasma.

Exemplary semiconductor processing methods may include flowing deposition gases that may include a nitrogen-containing precursor, a silicon-containing precursor, and a carrier gas, into a substrate processing region of a substrate processing chamber. The flow rate ratio of the nitrogen-containing precursor to the silicon-containing precursor may be greater than or about 1:1. The methods may further include generating a deposition plasma from the deposition gases to form a silicon-and-nitrogen containing layer on a substrate in the substrate processing chamber. The silicon-and-nitrogen-containing layer may be treated with a treatment plasma, where the treatment plasma is formed from the carrier gas without the silicon-containing precursor. The flow rate of the carrier gas in the treatment plasma may be greater than a flow rate of the carrier gas in the deposition plasma.

Methods and apparatus for long read, label-free, optical nanopore long chain molecule sequencing. In general, the present disclosure describes a novel sequencing technology based on the integration of nanochannels to deliver single long-chain molecules with widely spaced (>wavelength), ˜1-nm aperture “tortuous” nanopores that slow translocation sufficiently to provide massively parallel, single base resolution using optical techniques. A novel, directed self-assembly nanofabrication scheme using simple colloidal nanoparticles is used to form the nanopore arrays atop nanochannels that unfold the long chain molecules. At the surface of the nanoparticle array, strongly localized electromagnetic fields in engineered plasmonic/polaritonic structures allow for single base resolution using optical techniques.

Thermally insulating materials (TIMs) for use in concentrated solar thermal (CST) technologies comprising a mesoporous oxide including a porous oxide matrix comprising a porous oxide and a metal oxide or metal nitride in the form of a conformal layer of the metal oxide or metal nitride on the surface of the porous oxide matrix, wherein the conformal layer completely covers the surface area of the porous oxide matrix, or in the form of metal oxide or metal nitride nanoparticles dispersed throughout the porous oxide matrix, or in the form of a conformal coating or nanoparticles, methods of preparing same, and solar devices comprising same.

A coated tool in a non-limiting embodiment of the present disclosure includes a base and a coating layer located on the base. The coated tool includes a first surface, a second surface adjacent to the first surface, and a cutting edge located on at least a part of a ridge part of the first surface and the second surface. The coating layer includes a Ti-based coating layer. If a fracture toughness value of the Ti-based coating layer is measured on a surface of the coating layer parallel to a surface of the base, the Ti-based coating layer includes a first region where the fracture toughness value is 10 MPa.Math.m.sup.0.5 or more.