A method for forming an amorphous thin film comprises: forming a seed layer on a surface of a base by supplying aminosilane-based gas on the base; forming the first boron-doped amorphous thin film by supplying the first source gas including boron-based gas on the seed layer; and forming the second boron-doped amorphous thin film by supplying the second source gas including boron-based gas on the first amorphous thin film.

A method for forming an amorphous thin film comprises: forming a seed layer on a surface of a base by supplying aminosilane-based gas on the base; forming the first boron-doped amorphous thin film by supplying the first source gas including boron-based gas on the seed layer; and forming the second boron-doped amorphous thin film by supplying the second source gas including boron-based gas on the first amorphous thin film.

A method of forming a structure of a substrate is provided including a tungsten-containing layer including a nucleation layer and a fill layer. The method includes disposing a nucleation layer along sidewalls of the opening, wherein nucleation layer includes boron and tungsten. Disposing the fill layer over the nucleation layer within the opening, wherein a tungsten-containing layer includes a resistivity of about 16 ??.Math.cm or less, wherein a tungsten-containing layer has a thickness of about 200 ? to about 600 ?, and wherein a tungsten-containing layer thickness is half a width of the tungsten-containing layer disposed within the opening between opposing sidewall portions of the opening.

A method of forming a structure of a substrate is provided including a tungsten-containing layer including a nucleation layer and a fill layer. The method includes disposing a nucleation layer along sidewalls of the opening, wherein nucleation layer includes boron and tungsten. Disposing the fill layer over the nucleation layer within the opening, wherein a tungsten-containing layer includes a resistivity of about 16 ??.Math.cm or less, wherein a tungsten-containing layer has a thickness of about 200 ? to about 600 ?, and wherein a tungsten-containing layer thickness is half a width of the tungsten-containing layer disposed within the opening between opposing sidewall portions of the opening.

A method for forming boron (B) containing Al.sub.2O.sub.3 composite layers includes (a) reacting a substrate surface with an aluminum-containing precursor to form a first monolayer, (b) purging excess aluminum-containing precursor and reaction by-product, (c) reacting the first monolayer with a second precursor, and (d) purging excess second precursor and reaction by-product, such that steps (a) to (d) constitute one cycle, the composite layers being formed after a plurality of cycles, and the resultant composite layers have a chemical formula of B.sub.xAl.sub.2-xO.sub.3, where x varies in the range of 0 and 2.

A method for forming boron (B) containing Al.sub.2O.sub.3 composite layers includes (a) reacting a substrate surface with an aluminum-containing precursor to form a first monolayer, (b) purging excess aluminum-containing precursor and reaction by-product, (c) reacting the first monolayer with a second precursor, and (d) purging excess second precursor and reaction by-product, such that steps (a) to (d) constitute one cycle, the composite layers being formed after a plurality of cycles, and the resultant composite layers have a chemical formula of B.sub.xAl.sub.2-xO.sub.3, where x varies in the range of 0 and 2.

A method for depositing a metal film onto a substrate is disclosed. In particular, the method comprises pulsing a metal halide precursor onto the substrate and pulsing a decaborane precursor onto the substrate. A reaction between the metal halide precursor and the decaborane precursor forms a metal film, specifically a metal boride.

A method for depositing a metal film onto a substrate is disclosed. In particular, the method comprises pulsing a metal halide precursor onto the substrate and pulsing a decaborane precursor onto the substrate. A reaction between the metal halide precursor and the decaborane precursor forms a metal film, specifically a metal boride.

Various embodiments herein relate to methods, apparatus and systems for forming a recessed feature in a dielectric-containing stack on a semiconductor substrate. Separate etching and deposition operations are employed in a cyclic manner. Each etching operation partially etches the feature. Each deposition operation forms a protective coating (e.g., a metal-containing coating) on the sidewalls of the feature to prevent lateral etch of the dielectric material during the etching operations. The protective coating may be deposited using methods that result in formation of the protective coating along substantially the entire length of the sidewalls. The protective coating may be deposited using particular reaction mechanisms that result in substantially complete sidewall coating. Metal-containing coatings have been shown to provide particularly good resistance to lateral etch during the etching operation. In some cases, a bilayer approach may be used to deposit the protective coating on sidewalls of partially etched features.

Various embodiments herein relate to methods, apparatus and systems for forming a recessed feature in a dielectric-containing stack on a semiconductor substrate. Separate etching and deposition operations are employed in a cyclic manner. Each etching operation partially etches the feature. Each deposition operation forms a protective coating (e.g., a metal-containing coating) on the sidewalls of the feature to prevent lateral etch of the dielectric material during the etching operations. The protective coating may be deposited using methods that result in formation of the protective coating along substantially the entire length of the sidewalls. The protective coating may be deposited using particular reaction mechanisms that result in substantially complete sidewall coating. Metal-containing coatings have been shown to provide particularly good resistance to lateral etch during the etching operation. In some cases, a bilayer approach may be used to deposit the protective coating on sidewalls of partially etched features.