A coated cutting tool comprising a substrate and a coating layer formed on a surface of the substrate, wherein: the coating layer comprises a lower layer, an intermediate layer, and an upper layer in this order from the substrate side; the lower layer comprises one or two or more Ti compound layers containing a Ti compound of Ti and an element of at least one kind selected from the group consisting of C, N, O and B, the intermediate layer comprises an -Al.sub.2O.sub.3 layer containing -Al.sub.2O.sub.3, and the upper layer comprises a TiCNO layer containing TiCNO; an average thickness of the coating layer is 5.0 m or more and 30.0 m or less; in a specific first cross section, a misorientation A satisfies a specific condition; and in a specific second cross section, a misorientation B satisfies a specific condition.

A coated tool has a substrate and a hard material coating deposited on the substrate. The hard material coating has a layer structure in the following order, starting from the substrate: a titanium nitride layer, a titanium boron nitride transition layer, and a titanium diboride layer. The titanium boron nitride transition layer has a boron content that increases from the titanium nitride layer in the direction of the titanium diboride layer. The boron content does not exceed 15 at %.

A coated tool has a substrate and a hard material coating deposited on the substrate. The hard material coating has a layer structure in the following order, starting from the substrate: a titanium nitride layer, a titanium boron nitride transition layer, and a titanium diboride layer. The titanium boron nitride transition layer has a boron content that increases from the titanium nitride layer in the direction of the titanium diboride layer. The boron content does not exceed 15 at %.

Embodiments of the disclosure generally relate to a method for dry stripping a boron carbide layer deposited on a semiconductor substrate. In one embodiment, the method includes loading the substrate with the boron carbide layer into a pressure vessel, exposing the substrate to a processing gas comprising an oxidizer at a pressure between about 500 Torr and 60 bar, heating the pressure vessel to a temperature greater than a condensation point of the processing gas and removing one or more products of a reaction between the processing gas and the boron carbide layer from the pressure vessel.

Embodiments of the disclosure generally relate to a method for dry stripping a boron carbide layer deposited on a semiconductor substrate. In one embodiment, the method includes loading the substrate with the boron carbide layer into a pressure vessel, exposing the substrate to a processing gas comprising an oxidizer at a pressure between about 500 Torr and 60 bar, heating the pressure vessel to a temperature greater than a condensation point of the processing gas and removing one or more products of a reaction between the processing gas and the boron carbide layer from the pressure vessel.

Methods are described for forming flowable carbon layers on a semiconductor substrate. A local excitation (such as a plasma in PECVD) may be applied as described herein to a carbon-containing precursor to form a flowable carbon film on a substrate. A remote excitation method has also been found to produce flowable carbon films by exciting a stable precursor to produce a radical precursor which is then combined with an unexcited carbon-containing precursor in the substrate processing region. An optional post deposition plasma exposure may also cure or solidify the flowable film after deposition. Methods for forming air gaps using the flowable films described herein are also described.

Exemplary deposition methods may include delivering a silicon-containing precursor and a boron-containing precursor to a processing region of a semiconductor processing chamber. The methods may include providing a hydrogen-containing precursor with the silicon-containing precursor and the boron-containing precursor. A flow rate ratio of the hydrogen-containing precursor to either of the silicon-containing precursor or the boron-containing precursor is greater than or about 1:1. The methods may include forming a plasma of all precursors within the processing region of a semiconductor processing chamber. The methods may include depositing a silicon-and-boron material on a substrate disposed within the processing region of the semiconductor processing chamber.

Exemplary deposition methods may include delivering a silicon-containing precursor and a boron-containing precursor to a processing region of a semiconductor processing chamber. The methods may include providing a hydrogen-containing precursor with the silicon-containing precursor and the boron-containing precursor. A flow rate ratio of the hydrogen-containing precursor to either of the silicon-containing precursor or the boron-containing precursor is greater than or about 1:1. The methods may include forming a plasma of all precursors within the processing region of a semiconductor processing chamber. The methods may include depositing a silicon-and-boron material on a substrate disposed within the processing region of the semiconductor processing chamber.

A composition, and method for using the composition, in the fabrication of an electronic device, and particularly for depositing a film comprising silicon and boron having low dielectric constant (<6.0) and high oxygen ash resistance. The film includes silicon and boron and may be, without limitation, a silicon borocarboxide, a silicon borocarbonitride, a silicon boroxide, or a silicon borocarboxynitride.

A lithium boron coating and a method of producing the same. Atomic layer deposition deposits lithium and boron to form a lithium borate layer. The lithium borate maybe deposited as a solid electrolyte.