Provided is a solid vaporization/supply system of metal halide for thin film deposition that reduces particle contamination. The system includes a vaporizable source material container for storing and vaporizing a metal halide and buffer tank coupled with the vaporizable source material container. The vaporizable source material container includes a container main body with a container wall; a lid body; fastening members; and joint members, wherein the container wall is configured to have a double-wall structure composed of an inner wall member and outer wall member, which allows a carrier gas to be led into the container main body via its space. The container wall is fabricated of 99 to 99.9999% copper, 99 to 99.9996% aluminum, or 99 to 99.9996% titanium, and wherein the container main body, the lid body, the fastening members, and the joint members are treated by fluorocarbon polymer coating and/or by electrolytic polishing.

A substrate processing apparatus includes a processing chamber configured to process a substrate, and a filtration part containing a porous coordination polymer and provided in an exhaust path configured to exhaust a gas from the processing chamber.

A substrate processing apparatus includes a processing chamber configured to process a substrate, and a filtration part containing a porous coordination polymer and provided in a supply path configured to supply a gas to the processing chamber.

A raw material supply apparatus according to an aspect of the present disclosure includes: a container configured to store a solution of a first solid raw material dissolved in a solvent or a dispersion system of the first solid raw material dispersed in a dispersion medium; a removal part configured to form a second solid raw material by removing the solvent or the dispersion medium from the solution or the dispersion system stored in the container; a detection part configured to detect a completion of a removal of the solvent or the dispersion medium from the solution or the dispersion system; and a heater configured to heat the second solid raw material.

A raw material supply apparatus includes: a container configured to store a solution obtained by dissolving a first solid raw material in a solvent or a dispersion system obtained by dispersing the first solid raw material in a dispersion medium; an injection part configured to spray the solution or the dispersion system to inject the solution or the dispersion system into the container; an exhaust port configured to exhaust an inside of the container; a heating part configured to heat a second solid raw material formed by removing the solvent or the dispersion medium from the solution or the dispersion system; and a deposition part provided between the injection part and the exhaust port in the container and configured to deposit the second solid raw material.

Described are methods, systems, and apparatus for processing a gas mixture that contains at least two gases by contacting the gas mixture with a membrane that allows for preferential flow of one of the gases through the membrane, to separate one constituent gas from the mixture.

Herein disclosed are systems and methods related to solid source chemical sublimator vessels and corresponding deposition modules. The solid source chemical sublimator can include a housing configured to hold solid chemical reactant therein. A lid may be disposed on a proximal portion of the housing. The lid can include a fluid inlet and a fluid outlet and define a serpentine flow path within a distal portion of the lid. The lid can be adapted to allow gas flow within the flow path. The solid source chemical sublimator can include a filter that is disposed between the serpentine flow path and the distal portion of the housing. The filter can have a porosity configured to restrict a passage of a solid chemical reactant therethrough.

A film forming apparatus configured to form a metal oxide film or a metal nitride film through atomic layer deposition by alternately introducing metal compound gas and an OH radical or an NH radical in a reaction container. The film forming apparatus including: the reaction container; and at least one plasma generator provided outside the reaction container and configured to generate a first plasma including an oxygen radical or a nitrogen radical when oxygen or nitrogen is supplied and generate a second plasma including a hydrogen radical when hydrogen is supplied. The OH radical is generated by collision between the oxygen radical and the hydrogen radical or the NH radical is generated by collision between the nitrogen radical and the hydrogen radical in a downstream region from an outlet of the at least one plasma generator to an inner space of the reaction container.

Disclosed are vapor delivery systems comprise a housing body defining an interior volume therein, a plurality of flow resistors for receiving a carrier gas, to generate gas distribution lines in the interior volume, at least two surfaces having the solid or liquid precursor applied thereto to allow passage of the carrier gas thereover along the gas distribution lines to mix with a solid or liquid precursor vapor, a gas-collecting device downstream of the gas distribution lines to deliver a mixture of the carrier gas and the solid or liquid precursor vapor out of the system, and a flow controller fluidically connected to a carrier gas source to control a feed flow rate of the carrier gas feeding into the interior volume. A gas distribution flow rate along each gas distribution line is controlled by the feed flow rate of the carrier gas feeding into the interior volume.

Bottom-fed ampoules for a semiconductor manufacturing precursors and methods of use are described. The ampoules comprise an outer cylindrical wall and an inner cylindrical wall defining a flow channel in between and a bottom wall having a top surface with a plurality of concentric elongate walls, each wall comprising an opening offset from the opening in adjacent walls defining a gas exchange zone through which a carrier gas flows in contact with the precursor.