A shower head includes a face plate having an outer peripheral portion and a plurality of gas injection holes disposed inside the outer peripheral portion, a movable portion facing the face plate and having a gas introduction passage, and a seal interposed between the outer peripheral portion of the face plate and the movable portion. The movable portion is arranged to move, in the first direction, between a first position in which the movable portion is coupled to the face plate by interposing the seal between the movable portion and the face plate, and the gas introduction passage communicates with the inside of the chamber via the gas injection holes, and a second position in which the movable portion is separated from the face plate, and the gas introduction passage communicates with the inside of the chamber via a gap between the movable portion and the face plate.

A jacking tool includes a bar, a first jack and a second jack. The bar extends in a first direction and has a first connection region and a second connection. The first jack is movably attached to the first connection region of the bar. The second jack is movably attached to the second connection region of the bar. The first jack includes a foot, a first guiding rod and a second guiding rod spaced apart from each other in a second direction crossing the first direction, a rod disposed between the first and second guiding rods with a thread section that is movably attached to the bar, a knob attached to one end of the rod and a toggle attached to an opposite end of the rod that is proximate to the foot in the third direction.

A gas distribution assembly and methods for adjusting the gas flow through a gas supply unit into a reaction chamber are disclosed. The gas distribution assembly and methods can be used to increase or decrease gas flow uniformly through the gas supply unit. The gas distribution assembly and methods can also be used to increase gas flow into one area of the reaction chamber, while decreasing gas flow into another area.

A showerhead assembly, and method of forming thereof is provided. The apparatus, for example, includes a gas distribution plate comprising an inner portion and an outer portion, the inner portion made from single crystal silicon (Si) and the outer portion made from one of single crystal Si or polysilicon (poly-Si); a first ring body formed from silicon (Si) and silicon carbide (SiC) as a major component thereof, wherein the first ring body is bonded to and extends from one of the inner portion or outer portion of the gas distribution plate; and a backing plate configured to connect to the gas distribution plate via the first ring body.

A showerhead assembly, and method of forming thereof is provided. The apparatus, for example, includes a gas distribution plate comprising an inner portion and an outer portion, the inner portion made from single crystal silicon (Si) and the outer portion made from one of single crystal Si or polysilicon (poly-Si); a connector having a circular configuration and formed from silicon (Si) and silicon carbide (SiC) as a major component thereof, wherein the connector is bonded to at least one of the inner portion and outer portion of the gas distribution plate; and a backing plate configured to connect to the gas distribution plate via the connector.

An elastomeric seal for use in semiconductor manufacturing apparatus comprising an ink on at least a portion of the upper surface thereof, wherein the ink comprises a barrier material, the barrier material being operable to prevent or reduce degradation of the elastomeric seal from ultraviolet (UV) radiation.

A substrate processing apparatus, includes a sealed pressure vessel, such as an Atomic Layer Deposition, ALD, apparatus, a fluid inlet assembly attached to a wall of the sealed pressure vessel, the fluid inlet assembly having a fluid inlet pipe passing through the wall, and a resilient element in the fluid inlet assembly around the fluid inlet pipe coupling the inlet pipe to the wall, where one of an interior surface and an exterior surface of the resilient element sees pressure prevailing within the pressure vessel and the other sees ambient pressure, and where the fluid inlet pipe prevents fluid carried inside from being in contact with the resilient element, and a relating method.

In a device for depositing graphene, carbon nano-tubes or other, in particular carbon-contained coatings on a strip-shaped substrate, the substrate enters a reactor housing through an inlet opening and is transported in a transport direction through a process area that is tempered by a tempering device, before being exiting the reactor housing through an outlet opening. Heat-transport-inhibiting means are arranged between the process area and the inlet opening and/or the outlet opening by means of which a heat transport from the process area to the inlet opening or the outlet opening is reduced. Guide elements are also provided in order to guide the substrate into and out of regions directly adjacent to the inlet and outlet openings.

A substrate processing apparatus includes a chamber, a manifold including a tubular portion above the chamber, first and second introduction pipes provided on a side surface of the tubular portion, and a gas guide portion to guide, in a direction opposite the chamber, gases introduced from the first and second introduction pipes into the tubular portion, and then introduce the gases into the chamber. The gas guide portion does not contact a top of the manifold, and the manifold includes a space above the gas guide portion to allow the gases to flow from between the gas guide portion and the tubular portion into a space surrounded by the gas guide portion. The gas guide portion advantageously enables the gases to broadly diffuse and uniformly mix, increasing the quality of a film formed on a substrate inside the chamber.

Described herein is a technique capable of efficiently removing a foreign substance in a reaction tube. According to one aspect of the technique, there is provided a substrate processing apparatus including: a reaction tube in which a substrate is processed; and a substrate retainer including a plurality of support columns configured to support the substrate, wherein at least one among the plurality of the support columns includes: a hollow portion through which an inert gas is supplied; and a gas supply port through which the inert gas is supplied toward an inner wall of the reaction tube.