Gas distribution assemblies and process chambers comprising gas distribution assemblies are described. The gas distribution assembly includes a gas distribution plate, a lid and a primary O-ring. The primary O-ring is positioned between a purge channel of a first contact surface of the gas distribution plate and a second contact surface. Methods of sealing a process chamber using the disclosed gas distribution assemblies are also described.

An isolation valve assembly is provided that includes a valve body having an inlet and an outlet, a sealing body disposed within an interior cavity of the valve body, and an actuatable closure element disposed within the valve body. The sealing body comprises a channel extending between a first opening on a surface of the sealing body and a second opening on an opposite surface of the sealing body. The sealing body is rotatable between a first position permitting gas flow from the inlet to the outlet of the valve body via the channel, and a second position preventing gas flow from the inlet to the outlet of the valve body. The actuatable closure element is configured to retain the sealing body stationary in the first position or the second position.

Provided is a rotating shaft sealing device. The rotating shaft sealing device mounted in a semiconductor substrate processing apparatus that processes a semiconductor substrate while rotating a semiconductor loading unit accommodating the semiconductor substrate, includes: a housing that is hollow and mounted in the semiconductor substrate processing apparatus; a rotating shaft accommodated in the housing and connected to the semiconductor loading unit to transfer a rotational force to the semiconductor loading unit; a bearing rotatably supporting the rotating shaft in the housing; a sealing unit including a plurality of seals arranged in the housing to tightly seal a gap between the housing and the rotating shaft; and a power transfer unit mounted at an end of the rotating shaft to transfer a rotational force to the rotating shaft.

A reciprocating rotary CVD apparatus and a method for applying same. The reciprocating rotary CVD apparatus includes a cavity, a wafer heating base, a rotating apparatus. The rotating apparatus is located outside the cavity and includes a rotating power mechanism and a rotating sealing mechanism, and the rotating sealing mechanism includes a rotating member and a fixed member; the fixed member is fixedly and hermetically connected to the cavity, the rotating member is fixedly and hermetically connected to the wafer heating base, the rotating member is movably and hermetically connected to the fixed member, and the rotating member is connected to the rotating power mechanism, to drive, by using the rotating power mechanism, the rotating member and the wafer heating base to perform reciprocating rotation. In the present invention, the rotating apparatus rotates, to improve the uniformity of thin film deposition in a circumferential direction of a wafer.

A process chamber guide, designed for linearly guiding a substrate carrier that can be displaced in the process chamber guide in a direction of guidance such that by displacement of the substrate carrier in a process position, an at least regional demarcation of a process chamber guide can be formed by the process chamber guide and substrate carrier. The invention is characterized in that the process chamber guide has a roller bearing for the substrate support and at least one sealing surface, which extends parallel to the direction of guidance and is designed and arranged in such a way that, whenever the substrate carrier arranged in the process chamber guide is in a process position, the sealing surface is spaced apart less than 1 mm from the substrate carrier. The invention further relates to a process chamber and to a method for guiding a substrate carrier in a processing position.

A film forming method is provided. In the film forming method, a mask is prepared based on a measurement result of a surface state of a substrate. The mask is transferred into a process chamber and the substrate is transferred into the process chamber. Then, a film is formed on a back surface of the substrate while the mask is disposed onto the back surface of the substrate.

An apparatus includes a venting mechanism for venting a treatment vessel, a gas supply path including an upstream flow path to which a gas is supplied from a gas source, and multiple branch paths formed by branching a downstream side of the upstream flow path into multiple paths, each branch path being connected to the treatment vessel. The apparatus further includes first valves respectively provided in the branch paths to divert the gas to the branch paths, each first valve having a variable opening degree without being closed completely, a second valve provided in the upstream flow path to supply the gas or shut off the supply of the gas to a downstream side thereof, a pressure sensor that detects a pressure in the treatment vessel, and an abnormality detector that detects an abnormality in the downstream side of the second valve based on the detected pressure.

The invention discloses equipment and preparation method for open and continuous growth of a carbon nanomaterial. The equipment comprises a metal foil tape feeding system, a CVD system and a collection system. The method includes continuously conveying a metal foil tape pretreated or not into the CVD system via the metal foil tape feeding system, depositing a required carbon nanomaterial on the surface of the metal foil tape by CVD, directly collecting by the collection system or directly post-treating the carbon nanomaterial by a post-treatment system, and even directly producing a end product of the carbon nanomaterial. All the systems in the invention are arranged in the open atmosphere rather than an air-isolated closed space. The invention can realize round-the-clock continuous operation to greatly improve the production efficiency of carbon nanomaterials.

A flange, flange assembly, and reactor system including the flange and flange assembly are disclosed. An exemplary flange assembly includes heated and cooled sections to independently control temperatures of sections of the flange. Methods of using the flange, flange assembly and reactor system are also disclosed.

A gas mixing system for semiconductor fabrication includes a mixing block. The mixing block defines a gas mixing chamber, a first gas channel fluidly coupled to the gas mixing chamber at a first exit location, and a second gas channel fluidly coupled to the gas mixing chamber at a second exit location, wherein the first exit location is diametrically opposite the second exit location relative to the gas mixing chamber and the second gas channel has a bend of 90 degrees or less between an entrance of the second gas channel and the second exit location.