An electrode filament connection member configured to be attached so as to pass through an outer wall of a chemical vapor deposition apparatus in which an electrode filament is disposed in a chamber is provided, and to form an electrical connection between a wire from a power source and the electrode filament. The electrode filament connection member includes a head portion attached to the electrode filament, and a rod portion that extends through the outer wall and is connected to the wire. The head portion includes an electrode filament attachment portion at a tip end portion, and a side surface that is parallel to an axial direction or is gradually widened from the tip end portion toward the outer wall. An outer shape of the side surface of the head portion conforms to an outer shape of the electrode filament connection member when viewed in projection along the axial direction.

A semiconductor processing apparatus is disclosed. The apparatus may include, a reaction chamber and a susceptor dispose in the reaction chamber configured for supporting a substrate thereon, the susceptor comprising a plurality of through-holes in an axial direction of the susceptor. The apparatus may also include, a plurality of lift pins, each of the lift pins being disposed within a respective through-hole, and at least one gas transmitting channel comprising one or more gas channel outlets, the one or more gas channel outlets being disposed proximate to the through-holes. Methods for processing a substrate within a reaction chamber are also disclosed.

Provided herein are methods and related apparatuses for forming an ashable hard mask (AHM). In particular instances, use of a halogen-containing precursor can provide an AHM having improved etch resistance.

The present inventive concept relates to a substrate processing device, comprising: a chamber; a chamber lid that supports the upper portion of the chamber; a susceptor that is installed to face the chamber lid and supports a substrate; a gas ejection unit that ejects a plurality of gases; and an anti-sag bolt that is installed in the chamber lid and can be combined with the gas injection unit, wherein the anti-sag bolt includes a plurality of flow paths through which a plurality of gases can flow.

Gas distribution assemblies and process chambers comprising gas distribution assemblies are described. The gas distribution assembly includes a gas distribution plate, a lid and a primary O-ring. The primary O-ring is positioned between a purge channel of a first contact surface of the gas distribution plate and a second contact surface. Methods of sealing a process chamber using the disclosed gas distribution assemblies are also described.

A plasma processing chamber for depositing a film on an underside surface of a wafer, includes showerhead pedestal. The showerhead pedestal includes a first zone and a second zone. An upper separator fin is disposed over a top surface of the showerhead pedestal and a lower separator fin is disposed under the top surface of the showerhead pedestal and aligned with the upper separator fin. The first zone is configured for depositing a first film to the underside surface of the wafer and the second zone is configured for depositing a second film to the underside surface of the wafer. In another embodiment, a top surface of the showerhead pedestal may be configured to receive a masking plate instead of the upper separator fin. The masking plate is configured with a first area that has openings and a second area that is masked. The first areas is used to provide the process gas to a portion of the underside surface of the wafer for depositing a film.

Provided is a technique capable of suppressing the occurrence of by-products by suppressing adhesion of the by-products. A substrate processing apparatus includes: a reaction tube where a substrate is processed; a furnace opening unit disposed at a lower end of the reaction tube and having an upper surface and an inner circumferential surface, the furnace opening unit including: a concave portion disposed on the upper surface; and a convex portion having at least one notch connecting the concave portion to the inner circumferential surface; a cover covering at least the inner circumferential surface with a predetermined gap therebetween; and a gas supply unit configured to supply a gas to the concave portion.

A sealing device is installed in heating treatment equipment through which a steel strip passes, the device including a rotary damper which is placed above the steel strip so as to be in contact with the steel strip, and a roll which is placed below the steel strip so that the roll opposes the rotary damper to form a pair consisting of the rotary damper and the roll opposing each other, the steel strip passing through a gap, which is formed between the rotary damper and the roll opposing each other, in which two pairs each of which is the pair consisting of the rotary damper and the roll opposing each other are arranged in tandem in a moving direction of the steel strip in the heating treatment equipment, and an inert gas is fed into a space defined by the two pairs arranged in tandem.

A substrate processing apparatus for preventing adhesion of by-products to an inner surface of a furnace opening is disclosed. An apparatus is provided with: a process chamber, a substrate holder, a process gas supplier that supplies a process gas into the process chamber, a first heater that is installed outside the process chamber and heats an inside of the process chamber, a heat insulator that is installed between a lid of the process chamber and the substrate holder, a second heater that is installed near the substrate holder in the heat insulator and heats the inside of the process chamber, a third heater that is installed near an end closer to the lid in the process chamber and heats the end, and a supplier that supplies a purge gas to purge around the second and third heaters into the heat insulator.

A processing apparatus includes: a processing container having a substantially cylindrical shape; a gas supply pipe configured to supply a gas into the processing container; and an exhaust duct extending in a longitudinal direction of the processing container to form an exhaust window configured to exhaust the gas from an interior of the processing container, a first exhaust flow path configured to exhaust, from a first side in a longitudinal direction of the exhaust window, the gas exhausted through the exhaust window, and a second exhaust flow path configured to exhaust, from a second side in the longitudinal direction of the exhaust window, the gas exhausted through the exhaust window, wherein the exhaust duct includes: a first gas introduction part configured to introduce a ballast gas into the first exhaust flow path, and a second gas introduction part configured to introduce the ballast gas into the second exhaust flow path.