A gas supply device that supplies a processing gas to a processing container storing a substrate and performs a process includes: a raw material container configured to accommodate a liquid raw material or a solid raw material; a carrier gas supply configured to supply a carrier gas into the raw material container; a gas supply path configured to supply the processing gas, which includes the raw material that has been vaporized and the carrier gas, from the raw material container to the processing container; a flow meter provided in the gas supply path and configured to measure a flow rate of the processing gas; and a constricted flow path provided on a downstream side of the flow meter in the gas supply path and configured to increase an average pressure value between the constricted flow path and the flow meter in the gas supply path.

One or more embodiments described herein generally relate to methods and systems for forming films on substrates in semiconductor processes. In embodiments described herein, a process system includes different materials each contained in separate ampoules. Each material is flowed into a separate portion of a showerhead contained within a process chamber via a heated gas line. From the showerhead, each material is flowed on to a substrate that sits on the surface of a rotating pedestal. Controlling the mass flow rate out of the showerhead and the rotation rate of the pedestal helps result in films with desirable material domain sizes to be deposited on the substrate.

A semiconductor device with enhanced semiconductor characteristics that is useful for power devices. A semiconductor device, including: an n-type semiconductor layer; an electrode; two or more p-type semiconductors provided between the n-type semiconductor layer and the electrode, the n-type semiconductor layer containing a corundum-structured crystallin oxide semiconductor as a major component, a number of the two or more p-type semiconductor that is equal to or more than three, and the two or more p-type semiconductors that are embedded in the n-type semiconductor layer.

Processes and apparatus are described for atmospheric pressure plasma jet deposition onto a substrate. The process comprises feeding a solution comprising a dissolved metal precursor into a plasma jet. The dissolved metal precursor comprises a precursor metal selected from Groups 2 to 16, with the proviso that the precursor metal does not comprise Mn. The plasma jet is directed towards a surface of the substrate such that material from the plasma jet becomes deposited onto the surface of the substrate. The process provides a means to manufacture conductive, semiconducting or insulating deposits on a substrate in a material-efficient manner without the need for high-temperature post-treatment steps.

A gas management method includes: heating a raw material container that accommodates a raw material, by a heater, thereby generating a vaporized raw material gas; supplying the vaporized raw material gas together with a carrier gas to a processing container that accommodates a substrate, thereby performing a processing on the substrate; and controlling the heater based on a weight of the substrate after the processing on the substrate.

A method for preparing an oxygen-free passivated titanium or titanium-alloy powder product by means of gas-solid fluidization is provided. The new method includes placing the metal halide and the titanium powder which meet formula requirements into a gasifier and a fluidized bed reactor respectively; heating the gasifier to gasify the metal halide, and introducing dry argon and halide gas into the fluidized bed reactor; opening the fluidized bed, heating the fluidized bed, fluidizing the titanium powder after the introduction of the argon and the metal halide gas, and cooling the product to obtain the titanium powder subjected to oxygen-free passivation using metal chloride; molding the oxygen-free passivated titanium powder into a green body with powder metallurgy technology; and sintering the green body in vacuum or argon atmosphere according to the molding technology, and after temperature rise treatment, performing a densification sintering operation to obtain a high-performance titanium product component.

Provided is a solid vaporization/supply system of metal halide for thin film deposition that reduces particle contamination. The system includes a vaporizable source material container for storing and vaporizing a metal halide and buffer tank coupled with the vaporizable source material container. The vaporizable source material container includes a container main body with a container wall; a lid body; fastening members; and joint members, wherein the container wall is configured to have a double-wall structure composed of an inner wall member and outer wall member, which allows a carrier gas to be led into the container main body via its space. The container wall is fabricated of 99 to 99.9999% copper, 99 to 99.9996% aluminum, or 99 to 99.9996% titanium, and wherein the container main body, the lid body, the fastening members, and the joint members are treated by fluorocarbon polymer coating and/or by electrolytic polishing.

A solid material container for supplying solid materials housed inside by evaporating the solid materials, and includes a carrier gas introduction line, a first filling section that is filled with the solid material, a second filling section that is located in at least a part of an outer periphery of the first filling section, and is filled with the solid material, at least one tray-shaped third filling section that is disposed on the ceiling side of an interior of the solid material container, and a solid material lead-out line.

A semiconductor processing method for monitor the dose of a precursor from a solid or liquid source that utilize a caner gas and a semiconductor processing system are disclosed. A pressure or mass-flow controller is used to monitor the carrier as flow into the vessel and mass-flow meter is used to measure that total flow out of the vessel. Based on the difference between these two flows, the precursor flow is obtained and a dose of a solid or liquid precursor to a process chamber and a remaining amount in a source vessel is calculated.

The disclosure provides a film forming method that enables to obtain an epitaxial film with reduced defects such as dislocations due to a reduced facet growth industrially advantageously, even if the epitaxial film has a corundum structure. When forming an epitaxial film on a crystal-growth surface of a corundum-structured crystal substrate directly or via another layer, using the crystal substrate having an uneven portion on the crystal-growth surface of the crystal substrate, generating and floating atomized droplets by atomizing a raw material solution including a metal; carrying the floated atomized droplets onto a surface of the crystal substrate by using a carrier gas; and causing a thermal reaction of the atomized droplets in a condition of a supply rate limiting state.