A vaporizer includes a main body including a first body and a second body. The first body has an upper portion narrowing in a direction of a height of the first body and the second body has a cavity in which the first body is positioned. A mixing chamber is between the first and second bodies. The second body includes a carrier gas injection path connected to a carrier gas inlet formed in an upper portion of the mixing chamber. The carrier gas injection path carries a carrier gas. A source material injection path is connected to a source material inlet formed in the mixing chamber. The source material injection path carries a liquid source material. A discharge is connected to an outlet formed in a lower portion of the mixing chamber. A mixed fluid including the carrier gas and the liquid source material is discharged through the discharge path.

An apparatus for dispensing a vapor phase reactant to a reaction chamber is disclosed. The apparatus may include: a vessel having an inner volume configured to contain a liquid chemical; an array of sensors configured for detecting a fill level of the liquid chemical disposed within the inner volume, wherein the array of sensors are vertically distributed within the inner volume with an irregular vertical interval between adjacent sensors. The apparatus may also include: an inlet disposed in the vessel and configured for providing a carrier gas into the inner volume; and an outlet disposed in the vessel and configured for dispensing the vapor phase reactant from the inner volume to the reaction chamber. A sensor array for detecting the fill level of a liquid chemical is also disclosed, as well as methods for dispensing a vapor phase reactant to a reaction chamber.

A method and system for coating metallic powder particles is provided. The method includes: disposing an amount of metallic powder particulates within a fluidizing reactor; removing moisture adhered to the powder particles disposed within the reactor using a working gas; coating the powder particles disposed within the reactor using a precursor gas; and purging the precursor gas from the reactor using the working gas.

A reactor for coating particles includes a stationary vacuum chamber to hold a bed of particles to be coated, a chemical delivery system, and a paddle assembly. The paddle assembly includes a rotatable drive shaft and a first plurality of paddles and a second plurality of paddles that extend radially from the drive shaft. The spacing, cross-sections, and oblique angles of the paddles are such that orbiting of the paddles causes the first plurality of paddles and the second plurality of paddles to displace substantially equal volumes in opposite directions in the lower portion of the stationary vacuum chamber.

A raw material gas supply apparatus is configured to obtain a difference between a set value and a measured value of a vaporized raw material, add the difference as a correction value to the set value of the flow rate of the carrier gas to maintain an amount of the vaporized raw material at the set value, and subtract a difference from a set value of a flow rate of the dilution gas to maintain a total flow rate of the carrier gas and the dilution gas at a constant level. The amount of the vaporized raw material is calculated by subtracting an integration value of a measured value of the flow rate of the inert gas in the supply period of the raw material gas from an integration value of the flow rate of the raw material gas which is measured in the supply period.

Apparatus and methods for supplying a gas to a processing chamber are described. The apparatus comprises an inlet line and an outlet line, each with two valves, in fluid communication an ampoule. A bypass line connects the inlet valve and outlet valve closest to the ampoule. The apparatus and methods of use allow a precursor residue to be removed from the delivery lines of a processing chamber.

A source gas supply apparatus that supplies a source gas into a processing container, includes: a raw material container configured to contain a raw material, and to vaporize the raw material; a source gas supply flow path configured to supply the source gas including the vaporized raw material into the processing container; a flow rate measurement part installed in the source gas supply flow path, and configured to measure a flow rate of the source gas; a diluent gas supply flow path joining a downstream side of the flow rate measurement part in the source gas supply flow path, and configured to supply a diluent gas for diluting the source gas; and a gas mixer provided at a merging portion of the source gas supply flow path and the diluent gas supply flow path, and configured to mix the source gas with the diluent gas via a Venturi effect.

Provided is a method of controlling a gas supply apparatus including a vaporizer, a carrier gas supply source and a gas supply line, the method including: supplying a liquid or sold raw material to a raw material container included in a vaporizer; vaporizing the liquid or sold raw material in the raw material container to produce a raw material gas; exhausting an interior of the raw material container having the liquid or sold raw material; supplying a carrier gas from the carrier gas supply source to the raw material container; and flowing the raw material gas and the carrier gas from the raw material container to a processing chamber in which a substrate to be processed is accommodated via the gas supply line.

An α-Ga.sub.2O.sub.3 semiconductor film according to the present invention has a measurement point (dark spot) with a maximum emission intensity A of not more than 0.6 times the average value X of top 5% of the maximum emission intensities A at all measurement points in intensity mapping of plane cathodoluminescence, wherein the maximum emission intensity A at each measurement point is determined in the wavelength range of 250 to 365 nm.

A method of forming a microelectronic device comprises treating a base structure with a first precursor to adsorb the first precursor to a surface of the base structure and form a first material. The first precursor comprises a hydrazine-based compound including Si—N—Si bonds. The first material is treated with a second precursor to covert the first material into a second material. The second precursor comprises a Si-centered radical. The second material is treaded with a third precursor to covert the second material into a third material comprising Si and N. The third precursor comprises an N-centered radical. An ALD system and a method of forming a seal material through ALD are also described.