A semiconductor device includes a conductive film containing molybdenum and a metal element. The metal element has a melting point lower than the melting point of molybdenum and forms a complete solid solution with molybdenum. The metal element as a material for composing the conductive film is at least one selected from the group consisting of, for example, titanium, vanadium, and niobium.

In various embodiments, evaporation sources for deposition systems are heated and/or cooled via a fluid-based thermal management system.

A method for processing a gas stream comprising CO2 and at least three other gases selected from CO, H2, CH4, n-C2, n-C3, n-C4, n-05, n-C6, O2, H2O and N2, the method comprising utilising the gas stream in a catalytic chemical vapour deposition process, thereby reducing the CO2 content of the gas stream.

A liquid material vaporization and supply device is provided in which it is possible to accurately control a flow rate even in the case where calibration data is not available for a material gas. A first tank in which a liquid material is vaporized to produce material gas; a second tank in which the material gas is contained at a predetermined pressure; a pressure sensor that senses the pressure inside the second tank; a lead-out path for leading the material gas out of the second tank; a fluid control valve that is provided to open/close the lead-out path; and a flow rate control part that, when the material gas is led out through the lead-out path, on the basis of a reduction in the pressure sensed by the pressure sensor, controls the opening level of the valve to control the flow rate of the material gas are included.

Provided are a precursor supply unit, a substrate processing system, and a method of fabricating a semiconductor device using the same. The precursor supply unit may include an outer container, an inner container provided in the outer container and used to store a precursor source, a gas injection line having an injection port, which is provided below the inner container and in the outer container and is used to provide a carrier gas into the outer container, and a gas exhaust line having an exhaust port, which is provided below the inner container and in the outer container and is used to exhaust the carrier gas in the outer container and a precursor produced from the precursor source.

The present invention relates to the field of coatings on high-energy materials, devices or products that comprise the coated high-energy materials, functional coating materials and methods for producing and using the same. In particular, the present invention relates to energetic materials having initiated release coatings to improve the performance and shelf-life of the devices, products and/or raw materials, suitable for use as energetics or propellants for munitions, rockets, pyrotechnics, flares or other devices or components.

There is provided a control valve that is provided on a flow path along which flows a source fluid which is a liquid source or a source gas obtained by vaporizing a liquid source, a pressure sensor that is provided on a downstream side of the control valve, a flow rate sensor that measures a flow rate of the source fluid, and a valve controller that, while reducing a deviation between a set pressure and a measured pressure measured by the pressure sensor, controls the control valve such that a measured flow rate measured by the flow rate sensor is equal to or less than a limit flow rate which is a flow rate that is set based on an upper limit flow rate at which the liquid source can still be vaporized.

A chemical supply apparatus includes an evaporation unit disposed downstream of a chemical supply source to vaporize supplied chemical thereto, a filter unit disposed downstream of the evaporation unit, wherein the filter unit filters impurities in the vaporized chemical while the vaporized chemical passes through the filter unit, a liquefaction unit disposed downstream of the filter unit to liquefy the vaporized chemical, and a chemical storage tank disposed downstream of the liquefaction unit to store the liquefied chemical therein, wherein an electrode is disposed between the chemical supply source and the liquefaction unit, wherein the electrode electrically reacts with the chemical or particles in the chemical to change electrical properties of the chemical or the particles.

A system includes a vacuum chamber, and a substrate in the vacuum chamber includes a target surface. At least one effusion cell is in the vacuum chamber, wherein the effusion cell contains a solid metal-organic precursor compound with a vapor pressure of less than about 10.sup.2 Torr at a temperature of about 25 C. to about 300 C. The effusion cell is configured to sublime the solid metal-organic precursor compound at a sublimation temperature greater than about 0 C. and less than about 200 C. such that a stream of metal particles from the solid metal-organic precursor compound emanate from the effusion cell are directed toward to the target surface of the substrate to form a coating thereon.

A sequential infiltration synthesis apparatus comprising: a reaction chamber constructed and arranged to hold at least a first substrate; a precursor distribution and removal system to provide to and remove from the reaction chamber a vaporized first or second precursor; and, a sequence controller operably connected to the precursor distribution and removal system and comprising a memory provided with a program to execute infiltration of an infiltrateable material provided on the substrate when run on the sequence controller by: activating the precursor distribution and removal system to provide and maintain the first precursor for a first period T1 in the reaction chamber; activating the precursor distribution and removal system to remove a portion of the first precursor from the reaction chamber for a second period T2; and, activating the precursor distribution and removal system to provide and maintain the second precursor for a third period T3 in the reaction chamber. The program in the memory is programmed with the first period T1 longer than the second period T2.