Systems and methods related to temperature zone control systems can include a reactant source cabinet that is configured to be at least partially evacuated, a vessel base that is configured to hold solid source chemical reactant therein, and a lid that is coupled to a distal portion of the vessel base. The lid may include one or more lid valves. The system may further include a plurality of gas panel valves that are configured to deliver gas from a gas source to the vessel. The system may include a heating element that is configured to heat the one or more lid valves. The system may include a heat shield, a first portion of which is disposed between the one or more lid valves and the vessel base. A second portion of the heat shield may be disposed between the first heating element and the plurality of gas panel valves.

A coating system for parylene deposition may include a chamber, a pumping system having a first and a second pump, where a pumping speed of the first and second pumps is based at least in part on an operating pressure; and a controller, the controller configured by machine-readable instructions to control activation of the first pump to initiate a pump down operation of the chamber, determine a cut-in pressure for switching operation from the first to the second pump, monitor an internal pressure of the chamber, switch operation to the second pump based at least in part on determining that the internal pressure of the chamber is at or below the cut-in pressure; and continue, using the second pump, the pump down operation of the deposition chamber until the internal pressure is at or below a target pressure for parylene deposition.

Examples of the disclosure relate to a sequential infiltration synthesis apparatus comprising: a reaction chamber constructed and arranged to accommodate at least one substrate; a first precursor flow path to provide the first precursor to the reaction chamber when a first flow controller is activated; a second precursor flow path to provide a second precursor to the reaction chamber when a second flow controller is activated; a removal flow path to allow removal of gas from the reaction chamber; a removal flow controller to create a gas flow in the reaction chamber to the removal flow path when the removal flow controller is activated; and, a sequence controller operably connected to the first, second and removal flow controllers and the sequence controller being programmed to enable infiltration of an infiltrateable material provided on the substrate in the reaction chamber. The apparatus may be provided with a heating system.

Herein disclosed are systems and methods related to solid source chemical sublimator vessels and corresponding deposition modules. The solid source chemical sublimator can include a housing configured to hold solid chemical reactant therein. A lid may be disposed on a proximal portion of the housing. The lid can include a fluid inlet and a fluid outlet and define a serpentine flow path within a distal portion of the lid. The lid can be adapted to allow gas flow within the flow path. The solid source chemical sublimator can include a filter that is disposed between the serpentine flow path and the distal portion of the housing. The filter can have a porosity configured to restrict a passage of a solid chemical reactant therethrough.

A chemical vapor deposition (CVD) system for forming carbon nanotubes from solid or liquid feedstock. The system includes a reactor including a housing that includes an inlet and an outlet. The housing defines an interior for receiving the feedstock, and the interior receives inert gas. The CVD system includes a first stop valve in flow communication with the inlet and a second stop valve in flow communication with the outlet. The first and second stop valves seal the inlet and the outlet such that a static environment is formed in the interior when reacting the feedstock. A heater heats the interior to a temperature such that the feedstock is vaporized, thereby forming vaporized feedstock. The CVD system further includes a controller coupled in communication with the first and second valves and the heater. The controller is configured to selectively actuate the first and second valves and the heater.

A semiconductor substrate processing apparatus includes a chemical isolation chamber for processing a semiconductor substrate, a chemical delivery module, and a control module. The chemical delivery module is in fluid communication with the chamber and includes a canister oven, a control oven, and a heating element. The canister oven generates a process gas using a heated precursor. The control oven receives the process gas via a first gas line and supplies the process gas to the chamber via a second gas line. The first gas line extends between an inside surface of the canister oven and an inside surface of the control oven. The heating element heats a portion of the first gas line between the inside surface of the canister oven and the inside surface of the control oven. The controller module adjusts a heating temperature of the heating element based on a temperature of the portion.

A compound structure and a forming method thereof are provided. The method of forming a compound structure according to embodiments of the present invention comprises loading a metal precursor on a substrate, providing a chalcogen precursor to the substrate, and reacting the chalcogen precursor with the metal precursor. The compound structure according to embodiments of the present invention is formed by the method and has a 2-dimensional structure.

A system and method for treating a cavity comprises arranging a niobium structure in a coating chamber, the coating chamber being arranged inside a furnace, coating the niobium structure with tin thereby forming an Nb.sub.3Sn layer on the niobium structure, and doping the Nb.sub.3Sn layer with nitrogen, thereby forming a nitrogen doped Nb.sub.3Sn layer on the niobium structure.

The present disclosure provides a gas injection system that can include a housing configured to hold a plurality of precursor cartridges comprising one or more precursor materials, and a nozzle extending from the housing, the nozzle having a tip configured for insertion into a sample chamber of a material processing apparatus. The precursor cartridges are fluidly connected to the nozzle to selectively deliver one or more precursor gasses to the sample chamber.

Methods and apparatus for controlling a flow of process material to a deposition chamber. In embodiments, the apparatus includes a deposition chamber in fluid communication with one or more sublimators through one or more delivery lines, wherein the one or more sublimators each include an ampoule in fluid communication with the one or more delivery lines through an opening, and at least a first heat source and a second heat source, wherein the first heat source is a radiant heat source adjacent the ampoule and the second heat source is adjacent the opening, wherein the one or more delivery lines include one or more conduits between the deposition chamber and the one or more sublimators, and wherein the one or more conduits include one or more valves to open or close the one or more conduits, wherein the one or more valves in an open position prevents the flow of process material into the deposition chamber, and wherein the one or more valves in a closed position directs the flow of process material into the deposition chamber.