A system and method for treating a cavity comprises arranging a niobium structure in a coating chamber, the coating chamber being arranged inside a furnace, coating the niobium structure with tin thereby forming an Nb.sub.3Sn layer on the niobium structure, and doping the Nb.sub.3Sn layer with nitrogen, thereby forming a nitrogen doped Nb.sub.3Sn layer on the niobium structure.

A reactor for coating particles includes a stationary vacuum chamber to hold a bed of particles to be coated, a vacuum port in an upper portion of the chamber, a chemical delivery system configured to inject a reactant or precursor gas into a lower portion of the chamber, a paddle assembly, and a motor to rotate a drive shaft of the paddle assembly. The lower portion of the chamber forms a half-cylinder. The paddle assembly includes a rotatable drive shaft extending through the chamber along the axial axis of the half cylinder, and a plurality of paddles extending radially from the drive shaft such that rotation of the drive shaft by the motor orbits the plurality of paddles about the drive shaft.

An embodiment of the present disclosure provides a method of producing a reduced graphene oxide, the method including arranging a carbon material; arranging a substrate adjacent to the arranged carbon material; heating the arranged carbon material to a temperature of about 600° C. or higher, and depositing the heated carbon material on the substrate to form a reduced graphene oxide thin film, wherein the arranged carbon material is solid seedlac.

A depositing arrangement for evaporation of a material is disclosed herein. The depositing arrangement has an alkali metal or alkaline earth metal for deposition of the material on a substrate. The deposition arrangement has a first chamber configured for liquefying the material; a valve being in fluid communication with the first chamber, and being downstream of the first chamber, wherein the valve is configured for control of the flow rate of the liquefied material through the valve. The deposition arrangement has an evaporation zone being in fluid communication with the valve, and being downstream of the valve, wherein the evaporation zone is configured for vaporizing the liquefied material; a heating unit to heat the material to higher temperatures before providing the liquid material in the evaporation zone; and one or more outlets for directing the vaporized material towards the substrate.

Systems and methods for controlling precursor delivery. The systems and methods may comprise a precursor delivery vessel in fluid communication with a gas flow line. The precursor delivery vessel may comprise at least one tray containing a vaporizable precursor. An amount of thermal energy may be supplied to the at least one tray in an amount sufficient to vaporize the vaporizable precursor. The vaporized precursor may be dispensed from the precursor delivery vessel to the gas flow line. The amount of thermal energy supplied to the at least one tray may be adjusted sufficient to maintain a pressure of the vaporized precursor, in the gas flow line, within a pressure range.

The present disclosure provides generally for deposition of a material onto a substrate. More specifically, the present disclosure relates to systems and methods for continuous deposition of coating onto a substrate with an actively replenished replenishing material source. In some aspects, the deposition process may occur in a vacuum environment. In some embodiments, the deposition process may occur on site, such as during installation or manufacturing. In some implementations, the deposition process may occur in micro or zero gravity, and the installation or manufacturing may occur in space.

To provide a cobalt complex which is liquid at room temperature, useful for producing a cobalt-containing thin film under conditions without using an oxidizing gas.

A cobalt complex represented by the following formula (1):

L.sup.1-Co-L.sup.2  (1)

wherein L.sup.1 and L.sup.2 represent a unidentate amide ligand of the following formula (A), a bidentate amide ligand of the following formula (B) or a hetero atom-containing ligand of the following formula (C):

##STR00001##

wherein R.sup.1 and R.sup.2 represent a C.sub.1-6 alkyl group or a tri(C.sub.1-6 alkyl)silyl group, and the wave line represents a binding site to the cobalt atom;

##STR00002##

wherein R.sup.3 represents a tri(C.sub.1-6 alkyl)silyl group, R.sup.4 and R.sup.5 represent a C.sub.1-4 alkyl group, and X represents a C.sub.1-6 alkylene group;

##STR00003##

wherein R.sup.6 and R.sup.8 represent a C.sub.1-6 alkyl group, R.sup.7 represents a hydrogen atom or a C.sub.1-4 alkyl group, Y represents an oxygen atom or NR.sup.9, Z represents an oxygen atom or NR.sup.10, and R.sup.9 and R.sup.10 independently represent a C.sub.1-6 alkyl group.

A dry powder MOCVD vapor source system is disclosed that utilizes a gravimetric powder feeder, a feed rate measurement and feeder control system, an evaporator and a load lock system for continuous operation for thin film production, particularly of REBCO type high temperature superconductor (HTS) tapes.

A transparent wear-resistant film layer, a plastic substrate modification method, and a product are provided, the plastic substrate modification method includes the following steps: bombarding with at least one plastic substrate positioned in a chamber of a PECVD coating device with plasma to clean and activate the at least one plastic substrate, and forming a transparent wear-resistant film layer on the at least one surface of the activated plastic substrate by a plasma enhanced chemical vapor deposition using a siloxane monomer as a reaction raw material.

A dry powder MOCVD vapor source system is disclosed that utilizes a gravimetric powder feeder, a feed rate measurement and feeder control system, an evaporator and a load lock system for continuous operation for thin film production, particularly of REBCO type high temperature superconductor (HTS) tapes.