Some embodiments of the present disclosure provide a technique for improving film thickness uniformity on a surface of a substrate and between substrates. According to one or more embodiments, a technique is provided that includes: a vaporizer configured to generate a source gas by vaporizing a liquid source; a tank in which the source gas ejected from the vaporizer is stored; a flow controller provided at a pipe connecting the vaporizer with the tank; a first valve provided at the pipe; a second valve provided downstream of the tank; a process chamber downstream of the second valve and to which the source gas is supplied; and a controller configured to be capable of controlling the first valve and the second valve to alternately and repeatedly perform accumulation of the source gas from the vaporizer into the tank and release of the source gas from the tank to the process chamber.

The present disclosure provides a composite coating and a method for fabricating the composite coating. The composite coating comprises a polymer layer, a metal interlayer and an amorphous metal coating. The polymer layer is formed on a substrate and acts as a diffusion barrier layer, which is thick and dense enough to prevent the corrosive substances from penetrating into the substrate. The metal interlayer is formed between the polymer layer and the amorphous metal coating for improving the adhesion of the amorphous metal coating to the substrate.

A tray assembly comprises a plurality of trays. Each of the plurality of trays comprises a first tray portion and a second tray portion which are couplable together by a retainer and which are engageable with a cam member. Depending on the orientation of the cam member, each of the plurality of trays of the tray assembly is configurable between an expanded configuration and a collapsed configuration. In the collapsed configuration, the tray assembly is insertable into an ampoule. In the expanded configuration, the tray assembly is removable from an ampoule.

Herein disclosed are systems and methods related to solid source chemical sublimator vessels and corresponding deposition modules. The solid source chemical sublimator can include a housing configured to hold solid chemical reactant therein. A lid may be disposed on a proximal portion of the housing. The lid can include a fluid inlet and a fluid outlet and define a serpentine flow path within a distal portion of the lid. The lid can be adapted to allow gas flow within the flow path. The solid source chemical sublimator can include a filter that is disposed between the serpentine flow path and the distal portion of the housing. The filter can have a porosity configured to restrict a passage of a solid chemical reactant therethrough.

A process for depositing a coating on a continuous fibre of carbon or silicon carbide from a precursor of the coating, includes heating a segment of the fibre in the presence of the coating precursor in a microwave field so as to bring the surface of the segment to a temperature allowing the coating to form on the segment from the coating precursor, wherein the segment of fibre is in the presence of a supercritical phase of the precursor of the coating in the reactor and the coating is formed by supercritical phase chemical deposition in the reactor.

A sequential infiltration synthesis apparatus comprising: a reaction chamber constructed and arranged to hold at least a first substrate; a precursor distribution and removal system to provide to and remove from the reaction chamber a vaporized first or second precursor; and, a sequence controller operably connected to the precursor distribution and removal system and comprising a memory provided with a program to execute infiltration of an infiltrateable material provided on the substrate when run on the sequence controller by: activating the precursor distribution and removal system to provide and maintain the first precursor for a first period T1 in the reaction chamber; activating the precursor distribution and removal system to remove a portion of the first precursor from the reaction chamber for a second period T2; and, activating the precursor distribution and removal system to provide and maintain the second precursor for a third period T3 in the reaction chamber. The program in the memory is programmed with the first period T1 longer than the second period T2.

Provided is a gas supply apparatus for supplying a gas compound obtained by vaporizing a liquid compound to a target location, the gas supply apparatus comprising: a storage vessel capable of storing the liquid compound; a gas compound supply pipeline, one end of which is connected to the storage vessel, and another end of which is capable of being disposed at the target location; and a temperature control device configured to adjust a temperature of the gas compound or the liquid compound within the storage vessel to be equal to or lower than a surrounding temperature of the gas compound supply pipeline.

The invention relates to methods for the formation of rare earth nickelate thin films and “doped” (i.e. cation-substituted) variants thereof on a substrate using atomic layer deposition (ALD). The films can be deposited at low temperature (e.g. at temperatures as low as 225° C.) and have a range of useful properties including good crystallinity and high electrical conductivity, as well as interesting magnetic, optic and catalytic properties. These properties make the materials suitable for use in microelectronic applications, in the production of electrodes and as catalytic surfaces.

The present disclosure provides a gas injection system that can include a housing configured to hold a plurality of precursor cartridges comprising one or more precursor materials, and a nozzle extending from the housing, the nozzle having a tip configured for insertion into a sample chamber of a material processing apparatus. The precursor cartridges are fluidly connected to the nozzle to selectively deliver one or more precursor gasses to the sample chamber.

A method for forming a barium titanate film by conducting an ALD cycle, wherein the ALD cycle comprises forming a titanium oxide film and forming barium oxide film. In the forming of a titanium oxide film, TDMAT (Ti[N(CH.sub.3).sub.2].sub.4) is used as first raw material gas, and an OH radical is used as reaction gas, and in the forming of barium oxide film, a vaporized barium complex is used as second raw material gas, and an OH radical is used as reaction gas, and the titanium oxide film and the barium oxide film are alternately formed in a normal order or a reverse order.