A gas supply method for supplying a gas compound obtained by vaporizing a liquid compound stored in a storage vessel to a target location through a gas compound supply pipeline, the gas supply method including adjusting a temperature of the liquid compound or the gas compound within the storage vessel to be equal to or lower than a surrounding temperature of the gas compound supply pipeline.

A process for depositing a coating on a continuous carbon or silicon carbide fibre from a coating precursor, includes at least heating a segment of the fibre in the presence of the coating precursor in a microwave field so as to bring the surface of the segment to a temperature enabling the coating to be formed on the segment from the coating precursor.

In order to appropriately control temperatures of fluid heating sections that are maintained at different temperatures, the fluid control device (100) comprises a plurality of fluid heating sections (1) connected to each other and each having a flow path or a fluid accommodating portion inside, heaters (10) configured to heat each of the plurality of fluid heating sections to different temperatures, and heat insulating members (13, 13′) disposed between adjacent fluid heating sections.

A precursor supply chamber for accommodating a precursor container in connection with an atomic layer deposition apparatus includes chamber walls defining a chamber space inside the precursor supply chamber. The precursor supply chamber also includes a chamber door assembly arranged to close the precursor supply chamber in a gas tight manner, a first heating element provided to the precursor supply chamber and arranged to heat the precursor container inside the chamber space of the precursor supply chamber and a gas tight precursor connection provided to the chamber walls for supplying precursor from the precursor container outside the precursor supply chamber.

A precursor source arrangement for an atomic layer deposition reactor and to an atomic layer deposition apparatus wherein the precursor source arrangement includes a valve chamber having one or more supply valves, and a precursor source chamber having a precursor container space inside the precursor source chamber. The precursor source chamber includes a precursor source heat transfer element arranged to heat the precursor container inside the precursor container space. The valve chamber includes a valve chamber heat transfer element arranged to heat the one or more valves inside the valve chamber, and the valve chamber heat transfer element is arranged in heat transfer contact with the precursor source heat transfer element.

Methods and apparatus for controlling a flow of process material to a deposition chamber. In embodiments, the apparatus includes a deposition chamber in fluid communication with one or more sublimators through one or more delivery lines, wherein the one or more sublimators each include an ampoule in fluid communication with the one or more delivery lines through an opening, and at least a first heat source and a second heat source, wherein the first heat source is a radiant heat source adjacent the ampoule and a second heat source is adjacent the opening, wherein the one or more delivery lines include one or more conduits between the deposition chamber and the one or more sublimators, and wherein the one or more conduits include one or more valves to open or close the one or more conduits, wherein the one or more valves in an open position prevents the flow of process material into the deposition chamber, and wherein the one or more valves in a closed position directs the flow of process material into the deposition chamber.

A deposition tool including a processing chamber, a substrate holder for holding a substrate to be processed within the processing chamber and a showerhead having a faceplate for distributing a first and/or second gas(es) and/or vapor(s) into the processing chamber. The showerhead includes first and second plenums, first and second chambers, each provided behind a backside of the faceplate, and first and second sets of holes, both formed through the faceplate of the showerhead, and in fluid communication with the first and second chambers respectively.

Provided is a vaporizer capable of reducing the occurrence of bumping in a vaporization space and thereby minimizing the pressure fluctuations therein, when a method not using an atomizer is employed. A vaporizer (1) includes a tank body (10), a porous member (30) disposed in the vaporizer (1) and heated, a supply tube (40) configured to supply a liquid material (L) to the porous member (30), and a gas discharge passage (7) configured to discharge a source gas (G) produced by vaporizing the liquid material (L) to the outside. An outlet (41) of the supply tube (40) is disposed in contact with or in close proximity to the porous member (30). When the outlet (41) is disposed in close proximity to the porous member (30), a separation distance (H) between the outlet (41) and the porous member (30) is not greater than a distance from the outlet (41) to a bottom of a droplet of the liquid material (L) formed and suspended at the outlet (41) by surface tension.

A method of forming a single atomic layer nanoribbon on a substrate by subjecting two or more precursor powders to a moisturized gas flow at a temperature sufficient to deposit the single atomic layer nanoribbon on the substrate via chemical vapor deposition, the single atomic layer nanoribbon having a transition metal dichalcogenide material and the substrate including fluorophlogopite mica, highly oriented pyrolytic graphite, or a combination thereof. Also described are single atomic layer nanoribbons prepared by the method.

Some embodiments of the present disclosure provide a technique capable of improving a film thickness uniformity on a surface of a substrate and between substrates. According to one or more embodiments, there is provided a technique that includes: a vaporizer configured to generate a source gas by vaporizing a liquid source; a tank in which the source gas ejected from the vaporizer is stored; a flow controller provided at a pipe connecting the vaporizer with the tank; a first valve provided at the pipe; a second valve provided downstream of the tank; a process chamber downstream of the second valve and to which the source gas is supplied; and a controller configured to be capable of controlling the first valve and the second valve to alternately and repeatedly perform accumulation of the source gas from the vaporizer into the tank and release of the source gas from the tank to the process chamber.