Provided is a solid vaporization/supply system of metal halide for thin film deposition that reduces particle contamination. The system includes a vaporizable source material container for storing and vaporizing a metal halide and buffer tank coupled with the vaporizable source material container. The vaporizable source material container includes a container main body with a container wall; a lid body; fastening members; and joint members, wherein the container wall is configured to have a double-wall structure composed of an inner wall member and outer wall member, which allows a carrier gas to be led into the container main body via its space. The container wall is fabricated of 99 to 99.9999% copper, 99 to 99.9996% aluminum, or 99 to 99.9996% titanium, and wherein the container main body, the lid body, the fastening members, and the joint members are treated by fluorocarbon polymer coating and/or by electrolytic polishing.

A film-forming method of forming an oxide film on a substrate inside a chamber, includes: adsorbing a raw material gas for forming the oxide film onto the substrate by supplying the raw material gas into the chamber; and oxidizing the raw material gas adsorbed onto the substrate with oxygen-containing radicals produced by supplying a hydrogen gas and an oxygen gas into the chamber while preheating the hydrogen gas and the oxygen gas, wherein the adsorbing the raw material gas and the oxidizing the raw material gas are repeated, and when supplying at least one of the hydrogen gas and the oxygen gas, a supply partial pressure of the at least one of the hydrogen gas and the oxygen gas is changed to be relatively high at an initial supply stage and to gradually decrease over time.

Methods for the gas-phase delivery of gases, such as process gases, from the gas phase of a multicomponent source liquid are provided. The methods are generally directed to the generation of process gases having mass flow rates which are proportional to the input power delivered to the multicomponent source liquid containers. The methods may be used to deliver process gases to critical process applications.

An apparatus for atomic scale processing is provided. The apparatus may include a reactor (100) and an inductively coupled plasma source (10). The reactor may have inner (154) and outer surfaces (152) such that a portion of the inner surfaces define an internal volume (156) of the reactor. The internal volume of the reactor may contain a fixture assembly (158) to support a substrate (118) wherein the partial pressure of each background impurity within the internal volume may be below 10.sup.−6 Torr to reduce the role of said impurities in surface reactions during atomic scale processing.

The invention relates to methods for the production of high quality graphene. In particular, the invention relates to single-step thermal methods which can be carried out in an ambient-air or vacuum environment using renewable biomass as a carbon source. Specifically, the invention comprises heating a metal substrate and carbon source in a sealed ambient environment to a temperature which produces carbon vapour from the carbon source such that the vapour comes into contact with the metal substrate, maintaining the temperature for a time sufficient to form a graphene lattice and then cooling the substrate at a controlled rate to form a deposited graphene.

A specific type ion source 10 includes a chamber 11; a source gas supply 12 configured to supply an O.sub.2 gas into the chamber 11; a plasma forming device 13 configured to form plasma within the chamber 11 by applying a high frequency power to the O.sub.2 gas supplied into the chamber 11; an accelerator 14 configured to extract ions of an O element included in the plasma formed within the chamber 11 to an outside of the chamber 11, and configured to accelerate the extracted ions in a direction indicated by an arrow AR14; and a sorting device 15 configured to sort out a specific type ion O.sup.− from the ions accelerated by the accelerator 14 and configured to output the sorted specific type ion in a direction indicated by an arrow AR12.

Provided are a precursor supply unit, a substrate processing system, and a method of fabricating a semiconductor device using the same. The precursor supply unit may include an outer container, an inner container provided in the outer container and used to store a precursor source, a gas injection line having an injection port, which is provided below the inner container and in the outer container and is used to provide a carrier gas into the outer container, and a gas exhaust line having an exhaust port, which is provided below the inner container and in the outer container and is used to exhaust the carrier gas in the outer container and a precursor produced from the precursor source.

Implementations described herein relate to apparatus and methods for self-assembled monolayer (SAM) deposition. Apparatus described herein includes processing chambers having various vapor phase delivery apparatus fluidly coupled thereto. SAM precursors may be delivered to process volumes of the chambers via various apparatus which is heated to maintain the precursors in vapor phase. In one implementation, a first ampoule or vaporizer configured to deliver a SAM precursor may be fluidly coupled to the process volume of a process chamber. A second ampoule or vaporizer configured to deliver a material different from the SAM precursor may also be fluidly coupled to the process volume of the process chamber.

A liquid material vaporization and supply device is provided in which it is possible to accurately control a flow rate even in the case where calibration data is not available for a material gas. A first tank in which a liquid material is vaporized to produce material gas; a second tank in which the material gas is contained at a predetermined pressure; a pressure sensor that senses the pressure inside the second tank; a lead-out path for leading the material gas out of the second tank; a fluid control valve that is provided to open/close the lead-out path; and a flow rate control part that, when the material gas is led out through the lead-out path, on the basis of a reduction in the pressure sensed by the pressure sensor, controls the opening level of the valve to control the flow rate of the material gas are included.

A plasma CVD device (10) includes a vacuum container (21) including a space accommodating a film formation subject (S), a storage (30) storing hydrogen-free isocyanate silane and heating the isocyanate silane to generate an isocyanate silane gas supplied to the vacuum container (21), a pipe (11) connecting the storage (30) to the vacuum container (21) to supply the isocyanate silane gas generated by the storage (30) to the vacuum container (21), a temperature adjuster (12) adjusting a temperature of the pipe (11) to 83° C. or higher and 180° C. or lower, an electrode (22) disposed in the vacuum container (21), and a power supply (23) supplying high-frequency power to the electrode (22). When a silicon oxide film is formed on the film formation subject (S) in the vacuum container (21), pressure of the vacuum container (21) is greater than or equal to 50 Pa and less than 500 Pa.