A substrate processing apparatus includes a processing chamber configured to process a substrate, and a filtration part containing a porous coordination polymer and provided in an exhaust path configured to exhaust a gas from the processing chamber.

The present invention relates to coating glass for architectural or automotive use, either monolithic or laminated, having solar control properties. The coating consists of several layers of different metal oxide semiconductors (TiO.sub.2, ZnO, ZrO.sub.2, SnO.sub.2, AlO.sub.x) and a layer of metallic nanoparticles, which when superimposed on a pre-established order give the glass solar control properties. In particular the use of protective layers of n-type semiconductors around the metallic nanoparticles layer. It also relates to the method for obtaining the coating by means of the aerosol-assisted chemical vapor deposition technique, using precursor solutions containing an organic or inorganic salt (acetates, acetylacetonates, halides, nitrates) of the applicable elements and an appropriate solvent (water, alcohol, acetone, acetylacetone, etc.). The synthesis is performed at a temperature between 100 and 600° C. depending on the material to be deposited. A nebulizer converts the precursor solution into an aerosol which is submitted with a gas to the substrate surface, where due to the temperature the thermal decomposition of the precursor occurs and the deposition of each layer of the coating occurs.

A film forming method for forming a film by heating a mist in a film-forming unit, the method including steps of: atomizing a raw-material solution in an atomizer to generate a mist; conveying the mist with a carrier gas from the atomizer to the film-forming unit through a conveyor that connects the atomizer and the film-forming unit; and heating the mist to form a film on a substrate in the film-forming unit. In this method, a flow rate of the carrier gas and a temperature of the carrier gas are controlled to satisfy 7<T+Q<67, where Q represents the flow rate (L/minute) of the carrier gas, and T represents the temperature (° C.) of the carrier gas. Thus, provided is a film forming method excellent in film forming speed.

The disclosed technology relates generally to semiconductor processing and more particularly to liquid precursor injection apparatus and methods for depositing thin films. A method of injecting a liquid precursor into a thin film deposition chamber comprises delivering a vaporized liquid precursor into the thin film deposition chamber by atomizing the liquid precursor into atomized precursor droplets using a liquid injection unit and vaporizing the atomized precursor droplets into the vaporized liquid precursor in a vaporization chamber. The liquid injector unit and the liquid precursor are such that operating the liquid precursor delivery unit under a lower stability condition, including a first liquid precursor temperature at the liquid injection unit, a first liquid precursor pressure upstream of the liquid precursor injection unit and a first gas pressure downstream of the liquid precursor injection unit, causes a mass flow rate of the liquid precursor to vary by more than 10% relative to an average mass flow rate of the liquid precursor during a first time duration. Delivering the vaporized liquid precursor into the thin film deposition chamber comprises operating the liquid precursor delivery unit under a higher stability condition. The higher stability includes one or more of: a second liquid precursor temperature at the liquid injection unit that is lower than the first liquid temperature; a second liquid pressure upstream of the injection unit that is higher than the first liquid pressure; and a second gas pressure downstream of the liquid injection unit that is higher than the first Gas pressure. The higher stability is such that that the mass flow rate of the liquid precursor varies by less than 10% relative to an average mass flow rate during a second time duration having the same time duration as the first time duration.

Process for manufacturing a nuclear component comprising i) a support containing a substrate based on a metal (1), the substrate (1) being coated or not coated with an interposed layer (3) positioned between the substrate (1) and at least one protective layer (2) and ii) the protective layer (2) composed of a protective material comprising chromium; the process comprising a step a) of vaporizing a mother solution followed by a step b) of depositing the protective layer (2) onto the support via a process of chemical vapor deposition of an organometallic compound by direct liquid injection (DLI-MOCVD).

A simple, one-step method for producing a homogenous CeO.sub.2—TiO.sub.2 composite thin film using aerosol-assisted chemical vapor deposition (“CVD”) of a solution containing triacetatocerium (III) and tetra isopropoxytitanium (IV) on a fluorine-doped tin oxide (“FTO”) substrate at a temperature ranging from about 500 to about 650° C. Methods for using the film produced by this method.

A CaTiO.sub.3—TiO.sub.2 composite electrode and method of making is described. The composite electrode comprises a substrate with an average 2-12 μm thick layer of CaTiO.sub.3—TiO.sub.2 composite particles having average diameters of 0.2-2.2 μm. The method of making the composite electrode involves contacting the substrate with an aerosol comprising a solvent, a calcium complex, and a titanium complex. The CaTiO.sub.3—TiO.sub.2 composite electrode is capable of being used in a photoelectrochemical cell for water splitting.

A polymer substrate having deposited on its surface a reaction product of a precursor material obtained or obtainable by a method for preparation of polymer, and to the use of the polymer having improved antibacterial properties and/or antiviral properties or of the polymer having improved antibacterial properties and/or antiviral properties obtained or obtainable by the method for medical applications, antibiofouling applications, hygiene applications, food industry applications, industrial or computer related applications, consumer goods applications and appliances, public and public transport applications, underwater, water sanitation or seawater applications.

A film forming apparatus including, mist-forming unit that turns raw material solution into mist and generates mist, pipe connected to mist-forming unit and transfers carrier gas containing mist, at least one pipe for transferring additive fluid containing one or more types of gas as a main component to be mixed with carrier gas containing mist, pipe that is connected to film forming unit and transfers mixed mist fluid that is mixture of carrier gas containing mist and additive fluid, connecting member connecting pipe for transferring carrier gas containing mist, the pipe for transferring additive fluid, and the pipe for transferring mixed mist fluid, a film forming unit that heat-treats the mist to form a film on a substrate, wherein an angle between the pipe for transferring the additive fluid and the pipe for transferring the mixed mist fluid, which are connected by the connecting member, is 120 degrees or more.

A film formation apparatus includes a stage for having a substrate thereon; a mist generation source that generates a mist of a solution containing at least water and in which a material for forming a film on the substrate is dissolved; a supply path that conveys the mist toward the substrate on the stage by a flow of a carrier gas; and a heater that heats at least a part of the supply path. The part of the supply path heated by the heater is provided as a mist heating section in which infrared rays are radiated from an inner surface of the supply path toward the mist. The inner surface of the supply path in the mist heating section is coated with a coating layer containing at least one of an oxide and a hydroxide of an element present in the mist.