A wafer processing apparatus is configured to process a wafer by supplying mist to a surface of the wafer. The wafer processing apparatus includes a furnace in which the wafer is disposed, a gas supplying device configured to supply gas into the furnace, a mist supplying device configured to supply the mist into the furnace, and a controller. The controller is configured to execute a processing step by controlling the gas supplying device and the mist supplying device to supply the gas and the mist into the furnace, respectively. The controller is further configured to control the mist supplying device to stop supplying the mist into the furnace while controlling the gas supplying device to keep supplying the gas into the furnace when the processing step ends.

A method of applying a coloured coating to a decorative element such as a gemstone. The method comprises: providing an ink mixture comprising an ink and an organic carrier, the carrier comprising a polymerisable organic material; arranging the ink mixture and the decorative element in a plasma; and allowing the ink mixture to polymerise on a surface of the decorative element to form a polymerised colour coating. The polymerisable organic material may comprise a polymerisable siloxane or a polymerisable oxysilane.

Platinum films can be obtained by aerosol assisted chemical vapor deposition (AACVD) using one or more Pt-dialkyldithiocarbamate complexes of formula Pt(S.sub.2CNR.sub.2), wherein R is independently alkyl, aryl, or alkaryl, particularly as single source precursors. Such methods may include heating a substrate to a deposition temperature above 150° C. in a reactor; and introducing into the reactor, at the deposition temperature, an aerosol including a platinum dithiocarbamate compound, salt, and/or solvate thereof, to thereby deposit the platinum layer on the substrate. The Pt(S.sub.2CNR.sub.2)-derived films have well-connected and defect-free surface topography and better catalytic performance, likely due to their high conductivity and reflectivity.

A vaporizer is provided that is capable of heating source material mist under precise temperature management and thereby able to acquire a gas source material which can be adjusted to a prescribed temperature and which has a very low level of variation in temperature and that produces almost no precipitate. The vaporizer heats and vaporizes a source material mist to obtain a gas source material for film forming. The vaporizer comprises a main part formed from a metal material and having therein first flows path through which the source material mist flows and second flow paths through which a heating medium for heating the source material mist flows, the equivalent area circle diameter of the cross-section of the first flow paths is 5 mm or less while the equivalent area circle diameter of the cross-section of the second flow paths is 2 mm or less, and there are no gaps aside from the second flow paths between one of the first flow paths and another of the first flow paths adjacent thereto in the inside of the main part.

The disclosed technology relates generally to semiconductor processing and more particularly to liquid precursor injection apparatus and methods for depositing thin films. A method of injecting a liquid precursor into a thin film deposition chamber comprises delivering a vaporized liquid precursor into the thin film deposition chamber by atomizing the liquid precursor into atomized precursor droplets using a liquid injection unit and vaporizing the atomized precursor droplets into the vaporized liquid precursor in a vaporization chamber. The liquid injector unit and the liquid precursor are such that operating the liquid precursor delivery unit under a lower stability condition, including a first liquid precursor temperature at the liquid injection unit, a first liquid precursor pressure upstream of the liquid precursor injection unit and a first gas pressure downstream of the liquid precursor injection unit, causes a mass flow rate of the liquid precursor to vary by more than 10% relative to an average mass flow rate of the liquid precursor during a first time duration. Delivering the vaporized liquid precursor into the thin film deposition chamber comprises operating the liquid precursor delivery unit under a higher stability condition. The higher stability includes one or more of: a second liquid precursor temperature at the liquid injection unit that is lower than the first liquid temperature; a second liquid pressure upstream of the injection unit that is higher than the first liquid pressure; and a second gas pressure downstream of the liquid injection unit that is higher than the first Gas pressure. The higher stability is such that that the mass flow rate of the liquid precursor varies by less than 10% relative to an average mass flow rate during a second time duration having the same time duration as the first time duration.

A method comprises transporting a first stream of a carrier gas to a delivery device that contains a liquid precursor compound. The method further comprises transporting a second stream of the carrier gas to a point downstream of the delivery device. The first stream after emanating from the delivery device and the second stream are combined to form a third stream, such that the dew point of the vapor of the liquid precursor compound in the third stream is lower than the temperature of the plumbing that transports the vapor to a CVD reactor or a plurality of CVD reactors. The flow direction of the first stream, the flow direction of the second stream and the flow direction of the third stream are unidirectional and are not opposed to each other.

Inside a heating space of a heating chamber, a first heating treatment of moving a substrate along a substrate moving direction is performed by a first conveyor. After that, first conveyance processing of moving the substrate along a conveying direction is performed by a second conveyor. At this time, source mist is sprayed on the substrate by first thin film forming nozzles. Subsequently, second heating treatment is performed by a third conveyor. After that, second conveyance processing is performed by a fourth conveyor. At this time, source mist is sprayed on the substrate by second thin film forming nozzles.

A vaporizing apparatus for thin film deposition is provided. The vaporizing apparatus includes an atomizer configured to mix a source injected through a source inlet and a carrier gas injected through a carrier gas inlet and spray a mixed gas, a vaporizing unit including a first vaporization area and a second vaporization area, which are configured to vaporize the mixed gas sprayed from the atomizer, and configured to discharge a vaporized gas as a process gas through an outlet, and a heating unit configured to maintain the mixed gas in the vaporizing unit at a fixed temperature. The heating unit includes a first heating part arranged to surround the first vaporization area and configured to maintain the temperature of the mixed gas in the first vaporization area and a second heating part arranged to enclose the second vaporization area with the first heating part and configured to maintain the temperature of the mixed gas in the second vaporizing space.

A method for producing a gallium oxide semiconductor film by a mist CVD method, including, a mist-forming step in which a raw material solution containing gallium is misted in a mist-forming unit to generate mist, a carrier gas supply step of supplying a carrier gas for transferring the mist to the mist-forming unit, a transferring step of transferring the mist from the mist-forming unit to a film forming chamber using the carrier gas via a supply pipe connecting the mist-forming unit and the film forming chamber, a rectification step of rectifying flow of the mist and the carrier gas supplied to a surface of a substrate in the film forming chamber so as to flow along the surface of the substrate, a film forming step of heat-treating the rectified mist to form a film on the substrate, and an exhaust step of exhausting waste gas upward from the substrate.

A processing system for producing a product material from a liquid mixture includes an array of one or more power jet modules adapted to jet the liquid mixture into one or more streams of droplets and force the one or more streams of droplets into the processing system adapted to process the one or more streams of droplets into the product material. A method for producing a product material from a liquid mixture on a processing system includes moving each of the one or more power jet modules and be connected to an opening of a dispersion chamber, opening one or more doors of the one or more power jet modules, processing the one or more streams of droplets inside a reaction chamber, closing the one or more doors of the power jets modules and moving each of the one or more power jet modules in a second direction.