A method for preparing an oxygen-free passivated titanium or titanium-alloy powder product by means of gas-solid fluidization is provided. The new method includes placing the metal halide and the titanium powder which meet formula requirements into a gasifier and a fluidized bed reactor respectively; heating the gasifier to gasify the metal halide, and introducing dry argon and halide gas into the fluidized bed reactor; opening the fluidized bed, heating the fluidized bed, fluidizing the titanium powder after the introduction of the argon and the metal halide gas, and cooling the product to obtain the titanium powder subjected to oxygen-free passivation using metal chloride; molding the oxygen-free passivated titanium powder into a green body with powder metallurgy technology; and sintering the green body in vacuum or argon atmosphere according to the molding technology, and after temperature rise treatment, performing a densification sintering operation to obtain a high-performance titanium product component.

The present invention relates to a method of forming a coating layer of which a composition can be controlled, the method comprising steps of: preparing a substrate inside a chamber; evaporating a deposition material to generate YF.sub.3 or YOF particles in a gas phase by irradiating an electron beam on a YF.sub.3 deposition material provided in a solid form in an electron beam source; generating radical particles having activation energy by injecting a process gas containing oxygen into a RF energy beam source; irradiating an RF energy beam including oxygen radical particles toward the substrate; controlling a composition of a thin film by generating YOF deposition particles having a modified atomic ratio by adjusting an amount of fluorine substitution by oxygen as the YF.sub.3 or YOF particles and the oxygen radical particles react, and depositing the YOF deposition particles on the substrate with the RF energy beam.

A method for deposition of a thin film onto a substrate is provided. The method includes providing a source precursor containing on or more of elements constituting the thin film, generating a transient species from the source precursor, and depositing a thin film onto the substrate from the transient species. The transient species being a reactive intermediate that has a limited lifetime in a condensed phase at or above room temperature.

A plasma CVD device which comprises a substrate having a three-dimensional shape such as that of a bottle and which can form a coating on the surface of various substrates under atmospheric pressure, and a coating forming method are provided. This atmospheric pressure remote plasma CVD device is provided with a dielectric chamber which has a gas inlet, an inner space and a plasma outlet, and a plasma generation device which generates plasma in the inner space. The plasma outlet is provided with a nozzle that has an opening area smaller than the average cross-sectional area of the cross-sections perpendicular to the direction of gas flow in the inner space.

A method of making an atomic layer nanoribbon that includes forming a double atomic layer ribbon having a first monolayer and a second monolayer on a surface of the first monolayer, wherein the first monolayer and the second monolayer each contains a transition metal dichalcogenide material, oxidizing at least a portion of the first monolayer to provide an oxidized portion, and removing the oxidized portion to provide an atomic layer nanoribbon of the transition metal dichalcogenide material. Also provided are double atomic layer ribbons, double atomic layer nanoribbons, and single atomic layer nanoribbons prepared according to the method.

The present invention relates to a method of forming a coating layer of which a composition can be controlled, the method comprising steps of: preparing a substrate inside a chamber; evaporating a deposition material to generate YF.sub.3 or YOF particles in a gas phase by irradiating an electron beam on a YF.sub.3 deposition material provided in a solid form in an electron beam source; generating radical particles having activation energy by injecting a process gas containing oxygen into a RF energy beam source; irradiating an RF energy beam including oxygen radical particles toward the substrate; controlling a composition of a thin film by generating YOF deposition particles having a modified atomic ratio by adjusting an amount of fluorine substitution by oxygen as the YF.sub.3 or YOF particles and the oxygen radical particles react, and depositing the YOF deposition particles on the substrate with the RF energy beam.

The present disclosure relates to an antifouling coating layer, and in detail, provides a method of manufacturing an antifouling coating layer having excellent antifouling characteristic and durability through quick deposition using iCVD.

An ALD device includes a first precursor generator that is connected to a processing gas source and generates a first precursor to be supplied to a reactor vessel, and a second precursor generator that is connected to a reducing gas source and the reactor vessel and generates a second precursor to be supplied to the reactor vessel. The first precursor generator etches a target by a first plasma excited by a first plasma generator and supplies a compound gas containing a metallic component as the first precursor. The second precursor generator supplies radicals of a reducing gas component in a second plasma excited by a second plasma generator as the second precursor.

Proposed is a manufacturing method of a high-quality β-Ga.sub.2O.sub.3 thin film using a high-quality β-Ga.sub.2O.sub.3 thin film manufacturing apparatus based on halide vapor phase epitaxy (HVPE) growth. The apparatus includes a reaction gas generating unit in which a chlorine-based gas and Ga in a source zone react to generate GaClx, a dopant gas supply unit, an additional chlorine-based gas supply unit for supplying an additional chlorine-based gas in a source tube, oxygen-based gas supply units, and a susceptor unit supporting a substrate on which a Ga.sub.2O.sub.3 thin film is to be formed. During the epitaxial growth, the additional hydrogen chloride (HCl) gas is supplied to reduce the pre-reaction between precursors, and a movement distance to the susceptor can is increased to increase growth rate and growth speed to control the crystallinity. Thus, high-quality epitaxial growth and a high production yield can be achieved.

The disclosed methods and apparatus improve the fabrication of solid fibers and microstructures. In many embodiments, the fabrication is from gaseous, solid, semi-solid, liquid, critical, and supercritical mixtures using one or more low molar mass precursor(s), in combination with one or more high molar mass precursor(s). The methods and systems generally employ the thermal diffusion/Soret effect to concentrate the low molar mass precursor at a reaction zone, where the presence of the high molar mass precursor contributes to this concentration, and may also contribute to the reaction and insulate the reaction zone, thereby achieving higher fiber growth rates and/or reduced energy/heat expenditures together with reduced homogeneous nucleation. In some embodiments, the invention also relates to the permanent or semi-permanent recording and/or reading of information on or within fabricated fibers and microstructures. In some embodiments, the invention also relates to the fabrication of certain functionally-shaped fibers and microstructures. In some embodiments, the invention may also utilize laser beam profiling to enhance fiber and microstructure fabrication.