This invention relates to a process and an apparatus for synthesizing multiwall carbon nanotubes from high molecular polymeric wastes. The process comprises using induction heating in combination with catalytic chemical vapour deposition (CVD) with an array of catalytic materials to synthesize high value carbon nanotubes with better yield and purity from high molecular polymeric wastes.

A method of depositing silicon carbide on a preform to form a ceramic matrix composite comprises placing the preform into a reaction vessel, removing air from the reaction vessel and backfilling the reaction vessel with an inert gas to an operating pressure. The reaction vessel and the preform are heated to an operating temperature. A carrier gas and precursor materials are heated to a preheat temperature outside of the reaction vessel. The carrier gas and the precursor materials are introduced to the reaction vessel in a specified ratio. Off gasses, the precursor materials that are unspent, and the carrier gas are removed from the reaction vessel to maintain the specified ratio of the precursor materials in the reaction vessel.

A process for making low resistivity CVC silicon carbide. Applicants have developed a better process for adding nitrogen to silicon carbide which has the safety economic advantages of doping with N.sub.2 with the ease of N.sub.2 release advantages of using NH.sub.3. Preferred embodiments of the present invention include a NH.sub.3 generator with a source of H.sub.2 and a source of N.sub.2 and an arc discharge apparatus adapted to produce NH.sub.3 gas from a combination of the H.sub.2 and N.sub.2 sources.

This invention is an apparatus and a method for continuously generating a hydride gas of M.sub.1 which is substantially free of oxygen in a divided electrochemical cell. An impermeable partition or a combination of an impermeable partition and a porous diaphragm can be used to divide the electrochemical cell. The divided electrochemical cell has an anode chamber and a cathode chamber, wherein the cathode chamber has a cathode comprising M.sub.1, the anode chamber has an anode comprising M.sub.2 and is capable of generating oxygen, an aqueous electrolyte solution comprising a hydroxide M.sub.3OH partially filling the divided electrochemical cell. Hydride gas generated in the cathode chamber and oxygen generated in the anode chamber are removed through independent outlets. M.sub.1 can be selenium, phosphorous, silicon, metal or metal alloy, M.sub.2 is metal or metal alloy suitable for anionic oxygen generation, and M.sub.3 is NH.sub.4 or an alkali or alkaline earth metal.

The present invention relates to a method of preparing a polymer film using chemical vapor deposition using sulfur as an initiator (sCVD) capable of manufacturing a polymer film through polymerization of sulfur and a monomer using gas-phase sulfur as an initiator. In the manufactured polymer film, any of various monomers and sulfur can be polymerized into a copolymer, and it is possible to manufacture a polymer film having a high content of sulfur, an excellent refractive index, and excellent transmittance.

The disclosure describes hard magnetic materials including α″-Fe16N2 and techniques for forming hard magnetic materials including α″-Fe16N2 using chemical vapor deposition or liquid phase epitaxy.

A method for deposition of a thin film onto a substrate is provided. The method includes providing a source precursor containing on or more of elements constituting the thin film, generating a transient species from the source precursor, and depositing a thin film onto the substrate from the transient species. The transient species being a reactive intermediate that has a limited lifetime in a condensed phase at or above room temperature.

There is provided a semiconductor manufacturing device that supplies a source gas to a substrate installed in a reaction furnace and performs film formation processing to the substrate, including: a storage vessel which is disposed in the reaction furnace and which stores a metal raw material as a base of the source gas; an auxiliary vessel which is disposed at an upper side of the storage vessel in the reaction furnace and which is a bottomed vessel having an inlet port for the metal raw material; a connection pipe through which an outlet port for the metal raw material formed on the auxiliary vessel and an inside of the storage vessel are communicated with each other; a sealing plug for sealing the outlet port so as to be opened and closed freely; and heater units that heat an inside of the reaction furnace to a predetermined temperature so as to melt the metal raw material in the auxiliary vessel and the metal raw material in the storage vessel, and to a predetermined temperature required for film formation processing performed to the substrate.

There is provided an epitaxial substrate, including: a GaN substrate whose main surface is a c-plane; and a GaN layer epitaxially grown on the main surface, wherein the main surface includes a region where an off-angle is 0.4° or more, and an E3 trap concentration in the GaN layer grown on the region is 3.0×10.sup.13 cm.sup.−3 or less.

As one embodiment, the present invention provides a method for growing a β-Ga.sub.2O.sub.3-based single crystal film by using HYPE method. The method includes a step of exposing a Ga.sub.2O.sub.3-based substrate to a gallium chloride-based gas and an oxygen-including gas, and growing a β-Ga.sub.2O.sub.3-based single crystal film on a principal surface of the Ga.sub.2O.sub.3-based substrate at a growth temperature of not lower than 900° C.