Apparatus, systems, and methods for processing workpieces are provided. In one example implementation, a fluorine and oxygen plasma-based process can be used to smooth a roughened surface of a silicon and/or a silicon containing structure. The process can include generating species from a process gas using an inductive coupling element in a first chamber. The process can include introducing a fluorine containing gas and an oxygen containing gas with the species to create a mixture. The process can further include exposing the silicon and/or the silicon containing structure to the mixture such that the mixture at least partially etches a roughened portion to leave a smoother surface of the silicon and/or the silicon containing structure.

Deposition methods using Cl-based precursors to produce III-nitride materials are generally described.

A method for producing a GaN crystal that includes: (i) a seed crystal preparation step of preparing a GaN seed crystal having one or more facets selected from a {10-10} facet and a {10-1-1} facet; and (ii) a growth step of growing GaN from vapor phase on a surface comprising the one or more facets of the GaN seed crystal using GaCl.sub.3 and NH.sub.3 as raw materials.

A vapor phase epitaxial growth device comprises a reactor vessel. The device comprises a wafer holder arranged in the reactor vessel. The device comprises a first material gas supply pipe configured to supply first material gas to the reactor vessel. The device comprises a second material gas supply pipe configured to supply second material gas, which is to react with the first material gas, to the reactor vessel. The device comprises a particular gas supply pipe having a solid unit arranged on a supply passage. The device comprises a first heater unit configured to heat the solid unit to a predetermined temperature or higher. The solid unit comprises a mother region and a first region arranged continuously within the mother region. The mother region is a region that does not decompose at the predetermined temperature. The first region is a region that decomposes at the predetermined temperature and contains Mg.

Provided is a pore-filling method for protecting the pores of a porous material. The method, which is performed using a modified i-CVD technique, involves filling the pores of a porous material with a gas phase monomer within a pressure chamber and subsequently polymerizing the monomer, both within the pores and on the surface of the material as an overburden. The method is solvent-free and can fill and protect pores of any size of any material.

A method for deposition of nitrogen-doped nanocarbon comprises disposing molten polymer and a heated substrate in a plasma reactor; providing dense nitrogen-containing plasma in the plasma reactor in a space between the molten polymer and the heated substrate; and allowing the dense nitrogen-containing plasma to interact with both the molten polymer and the heated substrate to form a film of nitrogen-containing nanocarbon on the heated substrate.

Halidosilane compounds, processes for synthesizing halidosilane compounds, compositions comprising halidosilane precursors, and processes for depositing silicon-containing films (e.g., silicon, amorphous silicon, silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, silicon carbonitride, doped silicon films, and metal-doped silicon nitride films) using halidosilane precursors. Examples of halidosilane precursor compounds described herein, include, but are not limited to, monochlorodisilane (MCDS), monobromodisilane (MBDS), monoiododisilane (MIDS), monochlorotrisilane (MCTS), and monobromotrisilane (MBTS), monoiodotrisilane (MITS). Also described herein are methods for depositing silicon containing films such as, without limitation, silicon, amorphous silicon, silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, silicon carbonitride, doped silicon films, and metal-doped silicon nitride films, at one or more deposition temperatures of about 500° C. or less.

A production method for a composite material, which includes a porous substrate and a silicon carbide film formed on a surface of a material forming the porous substrate, includes causing a silicon source containing a silicon atom, a chlorine source containing a chlorine atom, and a carbon source containing a carbon atom to react with each other to form the silicon carbide film on the surface of the material forming the porous substrate.

A method for treating a carbon or ceramic yarn includes forming a coating on the yarn in a reaction zone of a reactor by heating a segment of the yarn in the presence of a gas phase in a microwave field, wherein the gas phase includes a mixture of a diluent gas and a coating precursor in the vapor state, and wherein the gas phase is formed at least by introducing the diluent gas into the reactor and mixing the introduced diluent gas with the coating precursor in the reactor before the reaction zone.

A method for deposition of a thin film onto a substrate is provided. The method includes providing a source precursor containing on or more of elements constituting the thin film, generating a transient species from the source precursor, and depositing a thin film onto the substrate from the transient species. The transient species being a reactive intermediate that has a limited lifetime in a condensed phase at or above room temperature.