The present invention provides a film forming apparatus having a mist spray nozzle which enables a prevention of a generation of a clogging. The film forming apparatus according to the present invention is provided with a mist spray head (100) for spraying a raw material. The mist spray head (100) includes a raw material spray nozzle (N1) and a raw material ejection part (7) for ejecting an atomized raw material, and the raw material spray nozzle (N1) includes a cavity (2, 3) and a raw material discharge part (5) which is drilled in a side surface of the cavity (2, 3), being away from a bottom surface of the cavity (2, 3), and is connected to the raw material ejection part (7).

A system to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system may include a deposition chamber, a substrate stage in the deposition chamber to hold the substrate, and a remote plasma generating system coupled to the deposition chamber, where the plasma generating system is used to generate a dielectric precursor having one or more reactive radicals. The system may also include a precursor distribution system that includes at least one top inlet and a plurality of side inlets. The top inlet may be positioned above the substrate stage and the side inlets may be radially distributed around the substrate stage. The reactive radical precursor may be supplied to the deposition chamber through the top inlet. An in-situ plasma generating system may also be included to generate the plasma in the deposition chamber from the dielectric precursors supplied to the deposition chamber.

The present disclosure is directed to a method and system for the localized deposition of a metal layer on a surface. The method involves introducing at least two gaseous reactants to a substrate surface that is locally heated by a laser. The surface is heated to a temperature at which the gaseous reactants undergo a reaction that results in metal crystal growth on the substrate surface. The reaction is maintained for a desired period of time and under desired conditions to produce a localized deposit of a metal layer on the heated zone of the substrate. In some embodiments, the gas outlets and the laser may be moved in a controlled manner so that a metal layer may be deposited in a desired pattern on the substrate surface.

Methods for forming an Indium-containing film by a vapor deposition method using a heteroalkylcyclopentadienyl Indium (I) precursor having a general formula:

In[R.sup.1R.sup.2R.sup.3R.sup.4CpL.sup.1] or

In[CpL.sup.1L.sup.2.sub.y]

wherein Cp represents a cyclopentadienyl ligand; R.sup.1 to R.sup.4 are each independently H, C.sub.1-C.sub.4 linear, branched or cyclic alkyls; L.sup.1 and L.sup.2 are each independently a substituent bonded to the Cp ligand and consisting of an alkyl chain containing at least one heteroatom, such as Si, Ge, Sn, N, P, B, Al, Ga, In, O, S, Se, Te, F, Cl, Br, I; and y=1-4. Examplary heteroalkylcyclopentadienyl Indium (I) precursors include In(Cp(CH.sub.2).sub.3NMe.sub.2) or In(CpPiPr.sub.2).

A gas distribution system is disclosed in order to obtain better film uniformity on a substrate in a cross-flow reactor. The better film uniformity may be achieved by an asymmetric bias on individual injection ports of the gas distribution system. The gas distribution may allow for varied tunability of the film properties.

High pressure spatial chemical vapor deposition apparatuses and related process are disclosed for forming thin films on a substrate. An enclosure includes plural process chambers fluidly isolated from each other by radial separating barriers. Each chamber contains a different source gas comprising one or more volatile reactive species. The substrate is supported beneath the chambers on a rotating heated susceptor. Rotation of the susceptor carries the substrate in a path which consecutively exposes the substrate to the volatile reactive species in each process chamber. The gases first mix in the gaseous boundary layer formed adjacent the substrate. A thin film gradually grows in thickness on the substrate with each successive pass and exposure to the volatile reactive species in each of the individual process chambers. The film may be grown at high pressures exceeding 1 atmosphere in some implementations. A modular design includes an outer shell and different interchangeable process inserts.

A plasma source has an outer surface, interrupted by an aperture for delivering an atmospheric plasma from the outer surface. A transport mechanism transports a substrate in parallel with the outer surface, closely to the outer surface, so that gas from the atmospheric plasma may form a gas bearing between the outer surface the and the substrate. A first electrode of the plasma source has a first and second surface extending from an edge of the first electrode that runs along the aperture. The first surface defines the outer surface on a first side of the aperture. The distance between the first and second surface increasing with distance from the edge. A second electrode covered at least partly by a dielectric layer is provided with the dielectric layer facing the second surface of the first electrode, substantially in parallel with the second surface of the first electrode, leaving a plasma initiation space on said first side of the aperture, between the surface of the dielectric layer and the second surface of the first electrode. A gas inlet feeds into the plasma initiation space to provide gas flow from the gas inlet to the aperture through the plasma initiation space. Atmospheric plasma initiated in the plasma initiation space flows to the aperture, from which it leaves to react with the surface of the substrate.

A gas injection apparatus includes a supply block including central gas ports configured to supply a process gas provided from a gas supply source; a diffusion cover under the supply block and including a branch duct which is connected to the central gas ports; a plurality of spray nozzles on a lower surface of the diffusion cover and connected to the branch duct, the plurality of spray nozzles configured to spray the process gas; and a shower head under the plurality of spray nozzles and including a plurality of spray holes vertically passing through the shower head, the plurality of spray holes configured to evenly spray the process gas sprayed by the plurality of spray nozzles. The diffusion cover further includes a concave portion at an upper surface thereof, the concave portion facing the central gas ports and concaved downward.

Provided is a linear movable rotary union including a driving shaft comprising a plurality of fluid supply paths; a hollow middle housing surrounding an outside of the driving shaft and comprising a plurality of first through holes in a sidewall; a plurality of first sealing members provided between the middle housing and the driving shaft to prevent leakage of a fluid; a hollow outer housing surrounding an outside of the middle housing and comprising a plurality of second through holes in a sidewall; and a plurality of second sealing members provided between the middle housing and the outer housing to prevent leakage of the fluid, and wherein the driving shaft is installed to be capable of rotational motion in the middle housing, and the middle housing is installed to be capable of reciprocating motion in an axial direction in the outer housing.

Provided are a metal chalcogenide thin film and a method and device for manufacturing the same. The metal chalcogenide thin film includes a transition metal element and a chalcogen element, and at least one of the transition metal element and the chalcogen element having a composition gradient along the surface of the metal chalcogenide thin film, the composition gradient being an in-plane composition gradient. The metal chalcogenide thin film may be prepared by using a manufacturing method including providing a transition metal precursor and a chalcogen precursor on a substrate by using a confined reaction space in such a manner that at least one of the transition metal precursor and the chalcogen precursor forms a concentration gradient according to a position on the surface of the substrate; and heat-treating the substrate.