Disclosed herein are systems and methods for engineering a metal substrate surface via a dry chemical deposition technique. Also described herein are the resulting surface engineered metal substrates. More particularly, disclosed are surface engineered metal substrates having thin films deposited via flame pyrolysis of a mixture of a gas mixture comprising an oxidizer and a combustible gas, a chemical precursor comprising a silicon-containing compound and/or a phosphorus-containing compound, and a chemical additive.

A ceramic matrix composite of the present disclosure includes a fiber substrate including a silicon carbide fiber bundle, and a silicon carbide film formed on a surface of each silicon carbide fiber of the silicon carbide fiber bundle, in which a ratio of an average film thickness D.sub.2 to an average film thickness Di is 1.0 to 1.3, the average film thickness Di being an average film thickness of the silicon carbide film formed on a surface of the silicon carbide fiber in an outer layer of the silicon carbide fiber bundle, and the average film thickness D.sub.2 being an average film thickness of the silicon carbide film formed on a surface of the silicon carbide fiber in an inner layer, which is positioned inside the outer layer, of the silicon carbide fiber bundle.

The present disclosure is directed to a method and system for the localized deposition of a metal layer on a surface. The method involves introducing at least two gaseous reactants to a substrate surface that is locally heated by a laser. The surface is heated to a temperature at which the gaseous reactants undergo a reaction that results in metal crystal growth on the substrate surface. The reaction is maintained for a desired period of time and under desired conditions to produce a localized deposit of a metal layer on the heated zone of the substrate. In some embodiments, the gas outlets and the laser may be moved in a controlled manner so that a metal layer may be deposited in a desired pattern on the substrate surface.

Presented herein are reactors for growing or depositing semiconductor films or devices. The reactors disclosed may be used for the production of materials grown by hydride vapor phase epitaxy (HVPE).

Embodiment disclosed herein include a liner assembly, comprising an injector plate liner, a gas injector liner coupled to the injector plate liner, an upper process gas liner coupled to the gas injector liner, a lower process gas liner coupled to the upper process gas liner, and an injector plate positioned between the injector plate liner and the upper process gas liner, wherein a cooling fluid channel is formed in the injector plate adjacent to the gas injector liner.

A thin-film deposition apparatus, related systems and methods are provided. The thin-film deposition apparatus 200 comprises a reaction chamber 201 for accommodating substrates 10 arranged with their side faces adjacent to each other and a fluid distribution device 100 with an expansion region 101 into which precursor fluid(s) enter via a number of inlets 103, and a transition region 102 for mixing said fluids. From the transition region, fluidic flow is directed into the reaction chamber 201 to propagate between the substrates 10 in a strictly laminar manner. By the invention, uniformity of precursor distribution on the substrates can be markedly improved.

A semiconductor substrate processing apparatus includes a vacuum chamber having a processing zone in which a semiconductor substrate may be processed, a process gas source in fluid communication with the vacuum chamber for supplying a process gas into the vacuum chamber, a showerhead module through which process gas from the process gas source is supplied to the processing zone of the vacuum chamber, and a substrate pedestal module. The substrate pedestal module includes a pedestal made of ceramic material having an upper surface configured to support a semiconductor substrate thereon during processing, a stem made of ceramic material, and a backside gas tube made of metallized ceramic material that is located in an interior of the stem. The metallized ceramic tube can be used to deliver backside gas to the substrate and supply RF power to an embedded electrode in the pedestal.

A thin-film deposition apparatus, related systems and methods are provided. The thin-film deposition apparatus 200 comprises a reaction chamber 201 for accommodating substrates 10 arranged with their side faces adjacent to each other and a fluid distribution device 100 with an expansion region 101 into which precursor fluid(s) enter via a number of inlets 103, and a transition region 102 for mixing said fluids. From the transition region, fluidic flow is directed into the reaction chamber 201 to propagate between the substrates 10 in a strictly laminar manner. By the invention, uniformity of precursor distribution on the substrates can be markedly improved.

Methods for forming an Indium-containing film by a vapor deposition method using a heteroalkylcyclopentadienyl Indium (I) precursor having a general formula:
In[R.sup.1R.sup.2R.sup.3R.sup.4CpL.sup.1] or
In[CpL.sup.1L.sup.2.sub.y]
wherein Cp represents a cyclopentadienyl ligand; R.sup.1 to R.sup.4 are each independently H, C.sub.1-C.sub.4 linear, branched or cyclic alkyls; L.sup.1 and L.sup.2 are each independently a substituent bonded to the Cp ligand and consisting of an alkyl chain containing at least one heteroatom, such as Si, Ge, Sn, N, P, B, Al, Ga, In, O, S, Se, Te, F, Cl, Br, I; and y=1-4. Examplary heteroalkylcyclopentadienyl Indium (I) precursors include In(Cp(CH.sub.2).sub.3NMe.sub.2) or In(CpPiPr.sub.2).

Presented herein are reactors for growing or depositing semiconductor films or devices. The reactors disclosed may be used for the production of III-V materials grown by hydride vapor phase epitaxy (HVPE).