A surface-coated cutting tool includes a substrate and a coating film that coats the substrate, wherein the coating film includes a hard coating layer constituted of a domain region and a matrix region, the domain region is a region having a plurality of portions divided and distributed in the matrix region, the domain region has a structure in which a first layer composed of a first Al.sub.x1Ti.sub.(1-x1) compound and a second layer composed of a second Al.sub.x2Ti.sub.(1-x2) compound are layered on each other, the matrix region has a structure in which a third layer composed of a third Al.sub.x3Ti.sub.(1-x3) compound and a fourth layer composed of a fourth Al.sub.x4Ti.sub.(1-x4) compound are layered on each other, the first AlTi compound and the second AlTi compound have a cubic crystal structure, the third AlTi compound and the fourth AlTi compound have a cubic crystal structure.

The present disclosure is directed to a method and system for the localized deposition of a metal layer on a surface. The method involves introducing at least two gaseous reactants to a substrate surface that is locally heated by a laser. The surface is heated to a temperature at which the gaseous reactants undergo a reaction that results in metal crystal growth on the substrate surface. The reaction is maintained for a desired period of time and under desired conditions to produce a localized deposit of a metal layer on the heated zone of the substrate. In some embodiments, the gas outlets and the laser may be moved in a controlled manner so that a metal layer may be deposited in a desired pattern on the substrate surface.

Chemical deposition reactor assembly configured for formation of coatings on surfaces of fluid-permeable materials, such as porous materials, by chemical deposition is provided, the reactor assembly includes a reaction chamber configured to receive, at least in part, a fluid-permeable substrate with a target surface to be coated; at least one reactive fluid intake line configured to mediate a flow of reactive fluid into the reaction chamber, and an inert fluid delivery arrangement with at least one enclosed section configured to mediate a flow of inert fluid through the substrate towards its' target surface such, that at the surface the flow of inert fluid encounters the flow of reactive fluid, whereby a coating is formed at the target surface of the fluid-permeable substrate.

Provided is a linear movable rotary union including a driving shaft comprising a plurality of fluid supply paths; a hollow middle housing surrounding an outside of the driving shaft and comprising a plurality of first through holes in a sidewall; a plurality of first sealing members provided between the middle housing and the driving shaft to prevent leakage of a fluid; a hollow outer housing surrounding an outside of the middle housing and comprising a plurality of second through holes in a sidewall; and a plurality of second sealing members provided between the middle housing and the outer housing to prevent leakage of the fluid, and wherein the driving shaft is installed to be capable of rotational motion in the middle housing, and the middle housing is installed to be capable of reciprocating motion in an axial direction in the outer housing.

Embodiments disclosed herein generally relate to a gas distribution assembly for providing improved uniform distribution of processing gases into a semiconductor processing chamber. The gas distribution assembly includes a gas distribution plate, a blocker plate, and a dual zone showerhead. The gas distribution assembly provides for independent center to edge flow zonality, independent two precursor delivery, two precursor mixing via a mixing manifold, and recursive mass flow distribution in the gas distribution plate.

Provided are a metal chalcogenide thin film and a method and device for manufacturing the same. The metal chalcogenide thin film includes a transition metal element and a chalcogen element, and at least one of the transition metal element and the chalcogen element having a composition gradient along the surface of the metal chalcogenide thin film, the composition gradient being an in-plane composition gradient. The metal chalcogenide thin film may be prepared by using a manufacturing method including providing a transition metal precursor and a chalcogen precursor on a substrate by using a confined reaction space in such a manner that at least one of the transition metal precursor and the chalcogen precursor forms a concentration gradient according to a position on the surface of the substrate; and heat-treating the substrate.

A surface-coated cutting tool includes a substrate and a coating film that coats the substrate, wherein the coating film includes a hard coating layer constituted of a domain region and a matrix region, the domain region is a region having a plurality of portions divided and distributed in the matrix region, the domain region has a structure in which a first layer composed of a first Al.sub.x1Ti.sub.(1x1) compound and a second layer composed of a second Al.sub.x2Ti.sub.(1x2) compound are layered on each other, the matrix region has a structure in which a third layer composed of a third Al.sub.x3Ti.sub.(1x3) compound and a fourth layer composed of a fourth Al.sub.x4Ti.sub.(1x4) compound are layered on each other, the first AlTi compound and the second AlTi compound have a cubic crystal structure, the third AlTi compound and the fourth AlTi compound have a cubic crystal structure.

Embodiment disclosed herein include a liner assembly, comprising an injector plate liner, a gas injector liner coupled to the injector plate liner, an upper process gas liner coupled to the gas injector liner, a lower process gas liner coupled to the upper process gas liner, and an injector plate positioned between the injector plate liner and the upper process gas liner, wherein a cooling fluid channel is formed in the injector plate adjacent to the gas injector liner.

There is provided a technique that includes: (a) arranging a plurality of first substrates and a second substrate having a smaller surface area than the first substrates and accommodating the plurality of first substrates and the second substrate in a process chamber; and (b) forming a thin film on each of the plurality of first substrates by supplying a processing gas to a substrate arrangement region in which the plurality of first substrates and the second substrate are arranged, wherein (b) includes: (c) supplying a dilution gas to a first supply region of the substrate arrangement region, or not performing a supply of the dilution gas to the first supply region, and supplying the dilution gas to at least one second supply region of the substrate arrangement region at a flow rate larger than a flow rate of the dilution gas supplied to the first supply region.

A titanium aluminum nitride coating having a columnar crystal structure, which is formed on a substrate, comprises high-Al TiAlN having an fcc structure, which has a composition represented by (Tix.sub.1, Aly.sub.1)N, wherein x.sub.1 and y.sub.1 are numbers meeting x.sub.1=0.005-0.1, and y.sub.1=0.995-0.9 by atomic ratio, and network-like, high-Ti TiAlN having an fcc structure, which has a composition represented by (Tix.sub.2, Aly.sub.2)N, wherein x.sub.2 and y.sub.2 are numbers meeting x.sub.2=0.5-0.9, and y.sub.2=0.5-0.1 by atomic ratio; the high-Al TiAlN being surrounded by the network-like, high-Ti TiAlN.