A film forming apparatus includes: a stage configured to mount the substrate thereon; a raw material gas supply part that supplies a raw material gas to the substrate and adsorb the raw material gas onto the substrate, and includes divided supply portions configured to independently supply the raw material gas toward gas reception regions; raw material gas supply lines configured to supply the raw material gas in parallel toward the raw material gas supply part; concentration adjustment gas supply lines configured to supply a concentration adjustment gas for adjusting a concentration of the raw material gas toward the raw material gas supply part in a parallel relationship; and a reaction gas supply part configured to supply the reaction gas reacting with the raw material gas adsorbed onto the substrate to generate a reaction product constituting the thin film.

A method and apparatus for producing a corrosion inhibiting coating for metal and metal alloy substrates. The coating is comprised of a metal or metal alloy that is similar in composition to the substrate to be coated, further combined with a corrosion inhibiting material. The corrosion inhibiting material may be a refractory metal or metalloid. The method and apparatus for producing the coating allows for the corrosion inhibiting coating to have a supersaturated concentration of the corrosion inhibiting material alloyed with another metal or metal alloy. The method and apparatus allow for the selective vaporization of material sources to make the coating vapor, which are then entrained in a high speed gas flow that directs the coating vapor onto the substrate. Optional plasma assistance and application of a voltage to the substrate may be used. The coating may be customized for a variety of applications.

Embodiments disclosed herein generally relate to a gas distribution assembly for providing improved uniform distribution of processing gases into a semiconductor processing chamber. The gas distribution assembly includes a gas distribution plate, a blocker plate, and a dual zone showerhead. The gas distribution assembly provides for independent center to edge flow zonality, independent two precursor delivery, two precursor mixing via a mixing manifold, and recursive mass flow distribution in the gas distribution plate.

A semiconductor substrate processing apparatus includes a vacuum chamber having a processing zone in which a semiconductor substrate may be processed, a process gas source in fluid communication with the vacuum chamber for supplying a process gas into the vacuum chamber, a showerhead module through which process gas from the process gas source is supplied to the processing zone of the vacuum chamber, and a substrate pedestal module. The substrate pedestal module includes a pedestal made of ceramic material having an upper surface configured to support a semiconductor substrate thereon during processing, a stem made of ceramic material, and a backside gas tube made of metallized ceramic material that is located in an interior of the stem. The metallized ceramic tube can be used to deliver backside gas to the substrate and supply RF power to an embedded electrode in the pedestal.

High pressure spatial chemical vapor deposition apparatuses and related process are disclosed for forming thin films on a substrate. An enclosure includes plural process chambers fluidly isolated from each other by radial separating barriers. Each chamber contains a different source gas comprising one or more volatile reactive species. The substrate is supported beneath the chambers on a rotating heated susceptor. Rotation of the susceptor carries the substrate in a path which consecutively exposes the substrate to the volatile reactive species in each process chamber. The gases first mix in the gaseous boundary layer formed adjacent the substrate. A thin film gradually grows in thickness on the substrate with each successive pass and exposure to the volatile reactive species in each of the individual process chambers. The film may be grown at high pressures exceeding 1 atmosphere in some implementations. A modular design includes an outer shell and different interchangeable process inserts.

A method of combinatorial material screening comprising causing first and second precursors to travel through a mixing channel to form a first mixture, depositing the first mixture onto a substrate to form a first thin film in a first pattern, causing more of the first and second precursors to travel through the mixing channel to form a second mixture, depositing the second mixture onto the substrate to form a second thin film in a second pattern comparing one or more characteristics of the first and second thin films.

In one aspect, a method of depositing a transition metal dichalcogenide is provided. The method includes depositing a layer of the transition metal dichalcogenide on a substrate by a metalorganic chemical vapor deposition process including exposing the substrate to a mixture of reactant gases including a transition metal precursor and a chalcogen precursor. The mixture further includes a gas-phase halogen-based reactant to volatilize transition metal adatoms deposited on the substrate.

An injector block for supplying one or more reactant gases into a chemical vapor deposition reactor. The injector block including a plurality of first reactant gas distribution channels between one or more first reactant gas inlets and a plurality of first reactant gas distribution outlets to deliver a first reactant gas into the reactor, and a plurality of second reactant gas distribution channels between one or more second reactant gas inlets and a plurality of second reactant gas distribution outlets to deliver a second reactant gas into the reactor, the plurality of second reactant gas distribution outlets partitioned into at least a second reactant gas first zone and a second reactant gas second zone, the second reactant gas second zone at least partially surrounding the second reactant gas first zone.

A semiconductor substrate processing apparatus includes a vacuum chamber having a processing zone in which a semiconductor substrate may be processed, a process gas source in fluid communication with the vacuum chamber for supplying a process gas into the vacuum chamber, a showerhead module through which process gas from the process gas source is supplied to the processing zone of the vacuum chamber, and a substrate pedestal module. The substrate pedestal module includes a pedestal made of ceramic material having an upper surface configured to support a semiconductor substrate thereon during processing, a stem made of ceramic material, and a backside gas tube made of metallized ceramic material that is located in an interior of the stem. The metallized ceramic tube can be used to deliver backside gas to the substrate and supply RF power to an embedded electrode in the pedestal.

Various examples related to fabrication of thermally stable ultra-high density particle-in-cavity (PIC) nanostructures. In one example, a method includes disposing an anodized aluminum oxide (AAO) template onto a surface of a substrate; removing, from the AAO template, a support layer disposed on a side of the AAO template opposite the surface of the substrate; etching nanocavities into the surface of the substrate using the AAO template as an etch mask; and removing the AAO template from the surface of the substrate. The method can include fabricating the AAO template on an aluminum substrate by anodization of an aluminum film and removing the AAO template from the aluminum substrate after formation of the support layer on the AAO template.