Described herein is a technique capable of forming a film so as to fill a recess of a substrate. According to one aspect thereof, there is provided a substrate processing apparatus including: a substrate mounting table on which a substrate is placed; an adsorption inhibiting gas supplier configured to supply an adsorption inhibiting gas onto a surface of the substrate from above the substrate mounting table; and a source gas supplier configured to supply a source gas onto the surface of the substrate from above the substrate mounting table, wherein a distance D1 between a gas supply port provided in the adsorption inhibiting gas supplier and the substrate is greater than a distance D2 between a gas supply port provided in the source gas supplier and the substrate.

An apparatus for manufacturing a semiconductor device includes a chamber including a lower housing and an upper housing, heater chucks in the lower housing, shower heads on the heater chucks, the shower heads being between the lower housing and the upper housing, power supplies connected to the shower heads to provide radio-frequency powers to the shower heads, power straps in the upper housing to connect the shower heads to the power supplies, and shielding members in the upper housing, the shielding members enclosing the power straps and the shower heads, respectively, the shielding members to prevent electromagnetic interference of the radio-frequency powers between the power straps and between the shower heads.

A method of manufacturing a gas barrier film comprises, a first film forming step of forming a base layer; a second film forming step of forming a silicon nitride layer on a surface of the base layer; and a third film forming step of forming a protective inorganic layer on a surface of the silicon nitride layer, wherein each of the second film forming step and the third film forming step includes film forming by plasma CVD, wherein the gas barrier film includes the substrate, the base layer, the silicon nitride layer, and the protective inorganic layer, in which the protective inorganic layer formed of silicon oxide, a thickness of the silicon nitride layer is 3 nm to 100 nm, and a ratio t.sub.2/t.sub.1 of a thickness t.sub.2 of the protective inorganic layer to the thickness t.sub.1 of the silicon nitride layer 3 to 80.

A method for producing a gallium oxide semiconductor film by a mist CVD method, including, a mist-forming step in which a raw material solution containing gallium is misted in a mist-forming unit to generate mist, a carrier gas supply step of supplying a carrier gas for transferring the mist to the mist-forming unit, a transferring step of transferring the mist from the mist-forming unit to a film forming chamber using the carrier gas via a supply pipe connecting the mist-forming unit and the film forming chamber, a rectification step of rectifying flow of the mist and the carrier gas supplied to a surface of a substrate in the film forming chamber so as to flow along the surface of the substrate, a film forming step of heat-treating the rectified mist to form a film on the substrate, and an exhaust step of exhausting waste gas upward from the substrate.

A deposition apparatus including a chamber having a deposition area and a non-deposition area, a gas intake device communicated with the chamber, a gas annulus disposed in the chamber and surrounding the gas intake device, a carrier disposed in the deposition area and a retaining annulus disposed in chamber and surrounding the carrier. The gas intake device is disposed corresponding to the deposition area and configured to draw a process gas into the deposition area. The gas annulus is configured to generate an annular gas curtain in the deposition area. The carrier carries a deposited object, wherein the gas annulus is located between the gas intake device and the carrier. The deposited object is surrounded by the annular gas curtain. The retaining annulus has a plurality of through holes. The retaining annulus is located between the gas annulus and the carrier.

A metal substrate with a silicon oxide based layer having a thickness between 80 and 400 nm and having between 5 and 30 atom % of carbon. Also included is a process for depositing by PECVD a silicon oxide based layer, having a thickness comprised between 80 and 400 nm and comprising between 5 and 30 atom % of carbon, on a metal substrate.

A deposition nozzle is provided that includes offset deposition apertures disposed between exhaust apertures on either side of the deposition apertures. The provided nozzle arrangements allow for deposition of material with a deposition profile suitable for use in devices such as OLEDs.

The present invention relates to a diamond-like coating for piston ring surfaces, comprising, an underlayer, a gradient layer and an AM layer, wherein the AM layer is a diamond-like coating doped with doping elements. The doping elements are one or a combination of at least two selected from the group consisting of Cr, Si and Ti, and the content thereof shows a cyclical change in a form of a sine wave fluctuation along with the thickness change of the AM layer. As compared with the conventional single-layer structure or gradient layer structure, the AM layer of such diamond-like coating has a multi-cycle transition structure since the content of the doping elements in the AM layer of such diamond-like coating shows a cyclical change in a sine wave fluctuation form. On the basis of having high wear-resistant and low friction coefficient, it is beneficial to decrease the internal stress of the coating, increase the tenacity of the coating, ensure the increase of the thickness of diamond-like coating, and improve the durability of piston ring of diamond-like coating at the same time.

A method of applying a treatment to a surface of an open body having a volume within an interior of the open body comprises; providing an inner structure (110) shaped to complement the shape of the interior of the open body and to fill a major portion of the volume or a major portion of a width of the interior of the open body; positioning the inner structure (110) within the open body in order to form a treatment fluid inner volume comprising an inner space (150) confronting an inner surface within the interior of the open body; and introducing a treatment fluid into the treatment fluid inner volume to thereby modify the inner surface of the open body by applying the treatment using the treatment fluid. Optionally, the method includes providing a tank (120) shaped to complement and contain the open body; positioning the open body within the tank (120) in order to form a treatment fluid outer volume comprising an outer space confronting the outer surface of the open body; and introducing the treatment fluid into the treatment fluid outer volume to thereby modify the outer surface of the open body by applying the treatment using the treatment fluid.

A gas injector for processing a substrate includes a body having an inlet connectable to a gas source that is configured to provide a gas flow in a first direction into the inlet when processing a substrate on a substrate support disposed within a processing volume of a processing chamber, and an a gas injection channel formed in the body. The gas injection channel is in fluid communication with the inlet and configured to deliver the gas flow to an inlet of the processing chamber. The gas injection channel has a first interior surface and a second interior surface that are parallel to a second direction and a third direction. The second and third directions are misaligned with a center of the substrate, and are at an angle to the first direction towards a first edge of the substrate support.