Provided herein are methods and related apparatuses for forming an ashable hard mask (AHM). In particular instances, use of a halogen-containing precursor can provide an AHM having improved etch resistance.

A fabric substrate bears a carbon based coating. A hollow cathode plasma enhanced chemical vapor deposition process deposits a hydrophobic carbon based coating on fabric substrates. In certain embodiments, a wear resistant hydrophobic carbon based coating coats fabric substrates.

The present disclosure proposes a coating nozzle, a coating device and a corresponding coating method. The nozzle includes: a first reactant spout configured to spray a first reactant; a second reactant spout configured to spray a second reactant; and a first air curtain spout configured to spray shielding gas, so that the sprayed shielding gas forms an air curtain which isolates the first reactant from the second reactant. The device includes: one or more coating nozzles described above; and a transport mechanism configured to transport an object to be coated, so that the object to be coated sequentially passes through a first reaction region of the first reactant and a second reaction region of the second reactant for each of the one or more nozzles.

A method of depositing tungsten over a substrate includes disposing the substrate into a vacuum enclosure of a tungsten deposition apparatus, performing a first tungsten deposition process that deposits a first tungsten layer over a physically exposed surface of the substrate by flowing a fluorine-containing tungsten precursor gas into the vacuum enclosure, performing an in-situ oxidation process by exposing the first tungsten layer to an oxidation agent gas while the substrate remains within the vacuum enclosure without breaking vacuum and forming a tungsten oxyfluoride gas which is pumped out of the vacuum enclosure, and performing a second tungsten deposition process that deposits a second tungsten layer on the first tungsten layer by flowing the fluorine-containing tungsten precursor gas into the vacuum enclosure in a second tungsten deposition process after the in-situ oxidation process.

A semiconductor manufacturing apparatus includes a heating part, a first electrode, a first insulating part, a gas supply part, a second electrode, and a second insulating part. The heating part is arranged to be in one surface side of a substrate. The first electrode is arranged around the heating part. The gas supply part is arranged to be in another surface side of the substrate. The second electrode is arranged around the gas supply part. The first electrode and the second electrode are arranged to overlap with an outer edge portion of the substrate, which is a region existing from an outer peripheral end of the substrate to a position inside by a predetermined length, in a direction in which the first electrode and the second electrode face each other. The first electrode is arranged to be in contact with part of the outer edge portion on the one surface side.

A substrate processing method includes: disposing a wafer in a wafer region of a tube; injecting an inert gas into a gap region, of the tube, between an inner side wall of the tube and the wafer disposed in the wafer region; and injecting a process gas into the wafer region of the tube, wherein a pressure of the gap region of the tube is higher than a pressure at an edge of the wafer region of the tube during the injection of the inert gas and the process gas.

Systems for and methods of manufacturing a ceramic matrix composite include introducing a gaseous precursor into an inlet portion of a reaction furnace having a chamber comprising the inlet portion and an outlet portion that is downstream of the inlet portion, and delivering a mitigation agent, such as water vapor or ammonia, into an exhaust conduit in fluid communication with and downstream of the outlet portion of the reaction chamber so as to control chemical reactions occurring with the exhaust chamber. Introducing the gaseous precursor densifies a porous preform, and introducing the mitigation agent shifts the reaction equilibrium to disfavor the formation of harmful and/or pyrophoric byproduct deposits within the exhaust conduit.

A vacuum processing apparatus of the present is a vacuum processing apparatus which performs plasma processing. The vacuum processing apparatus includes an electrode flange, a shower plate, an insulating shield, a processing chamber in which a processing-target substrate is to be disposed, an electrode frame, and a slide plate. The electrode frame and the slide plate are slidable in response to thermal deformation that occurs when a temperature of the shower plate is raised or lowered, and a space surrounded by the shower plate, the electrode flange, and the electrode frame is sealable. The electrode frame includes a frame-shaped upper plate surface portion, a vertical plate surface portion, and a lower plate surface portion.

The disclosed methods and apparatus improve the fabrication of solid fibers and microstructures. In many embodiments, the fabrication is from gaseous, solid, semi-solid, liquid, critical, and supercritical mixtures using one or more low molar mass precursor(s), in combination with one or more high molar mass precursor(s). The methods and systems generally employ the thermal diffusion/Soret effect to concentrate the low molar mass precursor at a reaction zone, where the presence of the high molar mass precursor contributes to this concentration, and may also contribute to the reaction and insulate the reaction zone, thereby achieving higher fiber growth rates and/or reduced energy/heat expenditures together with reduced homogeneous nucleation. In some embodiments, the invention also relates to the permanent or semi-permanent recording and/or reading of information on or within fabricated fibers and microstructures. In some embodiments, the invention also relates to the fabrication of certain functionally-shaped fibers and microstructures. In some embodiments, the invention may also utilize laser beam profiling to enhance fiber and microstructure fabrication.

A film forming method for forming a metal carbide film on a substrate, includes: forming a metal carbide film including a first metal element and a second metal element different from the first metal element on the substrate by performing, multiple times in a time-sharing manner: supplying a first precursor gas including the first metal element and not including carbon to the substrate; supplying a second precursor gas including the second metal element and including carbon to the substrate; and supplying a reducing agent to the substrate, wherein concentrations of the first metal element and the second metal element included in the metal carbide film are controlled by adjusting the order of the supplying the first precursor gas, the supplying the second precursor gas, and the supplying the reducing agent.