A raw material supply system includes: a first storage part configured to store a solution obtained by dissolving a first solid raw material in a solvent or a dispersion obtained by dispersing the first solid raw material in the solvent; a second storage part configured to store the solution or the dispersion transported from the first storage part; a detection part configured to detect an amount of the solution or the dispersion stored in the first storage part; and a heating part configured to heat a second solid raw material formed by removing the solvent from the solution or the dispersion stored in the second storage part.

A gas supply apparatus supplies a gas to a processing space where a gas processing is performed on a substrate. The gas supply apparatus includes: a gas supply source configured to supply a gas; a gas supply path configured to supply the gas to the processing space; an opening/closing valve configured to supply/stop the gas and provided in the gas supply path; a detector configured to detect a detectable index correlated with a Cv value of the opening/closing valve; an opening degree adjustment mechanism configured to adjust an opening degree of the opening/closing valve when the opening/closing valve is opened; and a controller configured to: store a relationship between the Cv value and the index; and control the opening degree by the opening degree adjustment mechanism such that when the index deviates from an appropriate range corresponding to an appropriate Cv value, the index falls within the appropriate range.

A film forming apparatus including, mist-forming unit that turns raw material solution into mist and generates mist, pipe connected to mist-forming unit and transfers carrier gas containing mist, at least one pipe for transferring additive fluid containing one or more types of gas as a main component to be mixed with carrier gas containing mist, pipe that is connected to film forming unit and transfers mixed mist fluid that is mixture of carrier gas containing mist and additive fluid, connecting member connecting pipe for transferring carrier gas containing mist, the pipe for transferring additive fluid, and the pipe for transferring mixed mist fluid, a film forming unit that heat-treats the mist to form a film on a substrate, wherein an angle between the pipe for transferring the additive fluid and the pipe for transferring the mixed mist fluid, which are connected by the connecting member, is 120 degrees or more.

Embodiments described herein relate to gas line systems with a multichannel splitter spool. In these embodiments, the gas line systems will include a first gas line that is configured to supply a first gas. The first gas line is coupled to a multichannel splitter spool with a plurality of second gas lines into which the first gas flows. Each gas line of the plurality of second gas lines will have a smaller volume than the volume of the first gas line. The smaller second gas lines will be wrapped by a heater jacket. Due to the smaller volume of the second gas lines, when the first gas is flowed through the second gas lines, the heater jacket will sufficiently heat the first gas, eliminating the condensation induced particle defects that occur in conventional gas line systems when the first gas meets with a second gas in the gas line system.

A method of making an atomic layer nanoribbon that includes forming a double atomic layer ribbon having a first monolayer and a second monolayer on a surface of the first monolayer, wherein the first monolayer and the second monolayer each contains a transition metal dichalcogenide material, oxidizing at least a portion of the first monolayer to provide an oxidized portion, and removing the oxidized portion to provide an atomic layer nanoribbon of the transition metal dichalcogenide material. Also provided are double atomic layer ribbons, double atomic layer nanoribbons, and single atomic layer nanoribbons prepared according to the method.

A vapor phase growth method of embodiments includes: forming a first silicon carbide layer having a first doping concentration on a silicon carbide substrate at a first growth rate by supplying a first process gas under a first gas condition; forming a second silicon carbide layer having a second doping concentration at a second growth rate higher than the first growth rate by supplying a second process gas under a second gas condition; and forming a third silicon carbide layer having a third doping concentration lower than the first doping concentration and the second doping concentration at a third growth rate higher than the second growth rate by supplying a third process gas under a third gas condition.

A furnace includes: a reaction chamber; a wafer boat assembly comprising multiple wafer boats each for bearing a substrate and an input pipeline assembly configured to introduce a gas are arranged in the reaction chamber; the introduced gas at least includes: silicon-containing reaction gas, nitrogen-containing reaction gas, impurity removal reaction gas, and cleaning gas; the input pipeline assembly includes a first gas input pipeline and a second gas input pipeline; the first gas input pipeline is provided with gas injection holes; the second gas input pipeline is formed by an elbow joint and two single pipes; the second gas input pipeline is provided with gas injection holes.

A coating system for parylene deposition may include a chamber, a pumping system having a first and a second pump, where a pumping speed of the first and second pumps is based at least in part on an operating pressure; and a controller, the controller configured by machine-readable instructions to control activation of the first pump to initiate a pump down operation of the chamber, determine a cut-in pressure for switching operation from the first to the second pump, monitor an internal pressure of the chamber, switch operation to the second pump based at least in part on determining that the internal pressure of the chamber is at or below the cut-in pressure; and continue, using the second pump, the pump down operation of the deposition chamber until the internal pressure is at or below a target pressure for parylene deposition.

A system that controls the flow rates of a plurality of split channels provided parallel to each other to a certain flow split ratio includes: a flow split ratio calculation unit that, in order to be able to diagnose whether a system abnormality that affects the flow split ratio is occurring, calculates a ratio of output values of flow rate sensors obtained by allowing, while fluid control valves of different split channels are closed, fluids to flow in these split channels as an actual flow split ratio; a reference flow split ratio storage unit that stores a reference flow split ratio serving as a reference for the actual flow split ratio; and an abnormality diagnosis unit that compares the actual flow split ratio and the reference flow split ratio, and diagnoses a system abnormality.

[Problem] To provide a valve system capable of monitoring in real time a mass of gas supplied from a valve that is periodically opened and closed, and that is capable of adjusting the output mass of gas supplied from the valve to be close to a target mass.

[Solution] The valve system operates a main actuator 60 to make a diaphragm periodically open and close a flow path (step S2), calculate an output mass of fluid that passes through the a between the diaphragm and a valve seat and output from the diaphragm valve based on displacement data detected by a displacement sensor (step S3), determines an adjustment lift amount based on the calculated output mass, and adjusts a lift amount Lf of the diaphragm 20 by the determined adjustment lift amount (step S4).