A method comprises transporting a first stream of a carrier gas to a delivery device that contains a liquid precursor compound. The method further comprises transporting a second stream of the carrier gas to a point downstream of the delivery device. The first stream after emanating from the delivery device and the second stream are combined to form a third stream, such that the dew point of the vapor of the liquid precursor compound in the third stream is lower than the temperature of the plumbing that transports the vapor to a CVD reactor or a plurality of CVD reactors. The flow direction of the first stream, the flow direction of the second stream and the flow direction of the third stream are unidirectional and are not opposed to each other.

Examples of the disclosure relate to a sequential infiltration synthesis apparatus comprising: a reaction chamber constructed and arranged to accommodate at least one substrate; a first precursor flow path to provide the first precursor to the reaction chamber when a first flow controller is activated; a second precursor flow path to provide a second precursor to the reaction chamber when a second flow controller is activated; a removal flow path to allow removal of gas from the reaction chamber; a removal flow controller to create a gas flow in the reaction chamber to the removal flow path when the removal flow controller is activated; and, a sequence controller operably connected to the first, second and removal flow controllers and the sequence controller being programmed to enable infiltration of an infiltrateable material provided on the substrate in the reaction chamber. The apparatus may be provided with a heating system.

Embodiments described herein relate to apparatus and methods for processing a substrate. In one embodiment, a cluster tool apparatus is provided having a transfer chamber and a pre-clean chamber, a self-assembled monolayer (SAM) deposition chamber, an atomic layer deposition (ALD) chamber, and a post-processing chamber disposed about the transfer chamber. A substrate may be processed by the cluster tool and transferred between the pre-clean chamber, the SAM deposition chamber, the ALD chamber, and the post-processing chamber. Transfer of the substrate between each of the chambers may be facilitated by the transfer chamber which houses a transfer robot.

A method of forming a material layer includes providing a substrate into a reaction chamber, providing a source material onto a substrate, the source material being a precursor of a metal or semimetal having a ligand, providing an ether-based modifier on the substrate, purging an inside of the reaction chamber, and reacting a reaction material with the source material to form the material layer.

A semiconductor device comprising a manifold for uniform vapor deposition is disclosed. The semiconductor device can include a manifold comprising a bore and having an inner wall. The inner wall can at least partially define the bore. A first axial portion of the bore can extend along a longitudinal axis of the manifold. A supply channel can provide fluid communication between a gas source and the bore. The supply channel can comprise a slit defining an at least partially annular gap through the inner wall of the manifold to deliver a gas from the gas source to the bore. The at least partially annular gap can be revolved about the longitudinal axis.

An ALD device includes a first precursor generator that is connected to a processing gas source and generates a first precursor to be supplied to a reactor vessel, and a second precursor generator that is connected to a reducing gas source and the reactor vessel and generates a second precursor to be supplied to the reactor vessel. The first precursor generator etches a target by a first plasma excited by a first plasma generator and supplies a compound gas containing a metallic component as the first precursor. The second precursor generator supplies radicals of a reducing gas component in a second plasma excited by a second plasma generator as the second precursor.

A process for depositing doped aluminum nitride (doped AlN) is disclosed. The process comprises subjecting a substrate to temporally separated exposures to an aluminum precursor and a nitrogen precursor to form an aluminum and nitrogen-containing compound on the substrate. The aluminum and nitrogen-containing compound is subsequently exposed to a dopant precursor to form doped AlN. The temporally separated exposures to an aluminum precursor and a nitrogen precursor, and the subsequent exposure to a dopant precursor together constitute a doped AlN deposition cycle. A plurality of doped AlN deposition cycles may be performed to deposit a doped AlN film of a desired thickness. The dopant content of the doped AlN can be tuned by performing a particular ratio of 1) separated exposures to an aluminum precursor and a nitrogen precursor, to 2) subsequent exposures to the dopant. The deposition may be performed in a batch process chamber, which may accommodate batches of 25 or more substrates. The deposition may be performed without exposure to plasma.

The present disclosure pertains to embodiments of a semiconductor deposition reactor manifold which can be used to deposit semiconductor layers using processes such as atomic layer deposition (ALD). The semiconductor deposition reactor manifold comprising heater blocks with heater elements mounted on a manifold body. Advantageously, the heater blocks are detachably mounted for easy replacement.

Vapor accumulator reservoirs for semiconductor processing operations, such as atomic layer deposition operations, are provided. Such vapor accumulator reservoirs may include an optical beam port to allow an optical beam to transit through the vapor and allow measurement of the vapor concentration in the reservoir. In some implementations, the reservoir may be integrated with a vacuum pumping manifold and the reservoir and manifold may be heated by a common heating system to prevent condensation of the vapor.

A semiconductor substrate processing apparatus includes a chemical isolation chamber for processing a semiconductor substrate, a chemical delivery module, and a control module. The chemical delivery module is in fluid communication with the chamber and includes a canister oven, a control oven, and a heating element. The canister oven generates a process gas using a heated precursor. The control oven receives the process gas via a first gas line and supplies the process gas to the chamber via a second gas line. The first gas line extends between an inside surface of the canister oven and an inside surface of the control oven. The heating element heats a portion of the first gas line between the inside surface of the canister oven and the inside surface of the control oven. The controller module adjusts a heating temperature of the heating element based on a temperature of the portion.