A substrate processing apparatus includes: a substrate holding member configured to hold a plurality of substrates; a reaction tube configured to accommodate the substrate holding member and process the substrates; a processing gas supply system configured to supply a processing gas into the reaction tube; and an exhaust system configured to exhaust an internal atmosphere of the reaction tube. The reaction tube includes: a cylindrical portion; a gas supply area formed outside one side wall of the cylindrical portion and connected to the processing gas supply system; and a gas exhaust area formed outside the other side wall of the cylindrical portion opposed to the gas supply area and connected to the exhaust system. Each of the gas supply area and the gas exhaust area has an inner wall which partitions the interior of each of the gas supply area and the gas exhaust area into a plurality of spaces.

A semiconductor processing apparatus is described that has a body with a wall defining two processing chambers within the body; a passage through the wall forming a fluid coupling between the two processing chambers; a lid removably coupled to the body, the lid having a portal in fluid communication with the passage; a gas activator coupled to the lid outside the processing chambers, the gas activator having an outlet in fluid communication with the portal of the lid; a substrate support disposed in each processing chamber, each substrate support having at least two heating zones, each with an embedded heating element; a gas distributor coupled to the lid facing each substrate support; and a thermal control member coupled to the lid at an edge of each gas distributor.

A method for delivering vaporized precursor in a substrate processing system using a vapor delivery system includes (a) selectively supplying push gas to an inlet of an ampoule storing liquid and vaporized precursor during a deposition period of a substrate; (b) measuring a pressure of the push gas and the vaporized precursor at an outlet of the ampoule during the deposition period; (c) determining a maximum pressure during the deposition period; (d) determining an integrated area for the deposition period based on a sampling interval and the maximum pressure during the sampling interval; and (e) repeating (a), (b), (c) and (d) for a plurality of the deposition periods for the substrate.

Disclosed is a substrate processing apparatus capable of improving the characteristic of a film formed on the surface of a wafer, using a single-wafer type substrate processing apparatus which heats and processes a wafer. The substrate processing apparatus may include: a processing vessel where a substrate is processed; a substrate supporter including: a first heater configured to heat the substrate to a first temperature; and a substrate placing surface where the substrate is placed; a heated gas supply system including a second heater configured to heat an inert gas, wherein the heated gas supply system is configured to supply a heated inert gas into the processing vessel; and a controller configured to control the first heater and the second heater such that a temperature of a front surface of the substrate and a temperature of a back surface of the substrate are in a predetermined range.

STEP 1 (Pressure increasing step) increases pressure within a raw material container to first pressure by supplying carrier gas to the inside of the raw material container by PCV. STEP 2 (Pressure decreasing step) decreases the pressure within the raw material container to second pressure by operating an exhaust device and discarding the raw material gas from a raw material gas supply pipe via an exhaust bypass pipe. STEP 3 (Stabilization step) stabilizes the vaporization efficiency for vaporizing the raw material inside the raw material container by operating the exhaust device and discarding the raw material gas while introducing the carrier gas into the raw material container. STEP 4 (Film forming step) supplies the raw material gas to the inside of the processing container via the raw material gas supply pipe and deposits a thin film on a wafer by CVD.

A ruthenium film forming method includes a deposition process of introducing a mixed gas of a ruthenium carbonyl gas and a CO gas into a processing vessel 1 by supplying the CO gas as a carrier gas from a CO gas container 43 configured to contain the CO gas into a film forming source container 41 configured to contain ruthenium carbonyl in a solid state as a film forming source material, and forming ruthenium film by decomposing the ruthenium carbonyl on a wafer W; and a CO gas introduction process of bringing the CO gas into contact with a surface of the wafer W by introducing the CO gas directly into the processing vessel 1 from the CO gas container 43 after stopping the introducing of the mixed gas into the processing vessel 1. The deposition process and the CO gas introduction process are repeated multiple times.

The present invention provides a gas jetting apparatus for a film formation apparatus. The gas jetting apparatus is capable of uniformly jetting, even onto a treatment-target object having a high-aspect-ratio groove, a gas into the groove. The gas jetting apparatus (100) according to the present invention includes a gas jetting cell unit (23) for rectifying a gas and jetting the rectified gas into the film formation apparatus (200). The gas jetting cell unit (23) has a fan shape internally formed with a gap (d0) serving as a gas route. A gas in a gas dispersion supply unit (99) enters from a wider-width side of the fan shape into the gap (d0), and, due to the fan shape, the gas is rectified, accelerated, and output from a narrower-width side of the fan shape into the film formation apparatus (200).

An annular lid plate of a plasma reactor has upper and lower layers of gas distribution channels distributing gas along equal length paths from gas supply lines to respective gas distribution passages of a ceiling gas nozzle.

An apparatus includes a vacuum chamber, a wafer transfer mechanism, a first gas source, a second gas source and a reuse gas pipe. The vacuum chamber is divided into at least three reaction regions including a first reaction region, a second reaction region and a third reaction region. The wafer transfer mechanism is structured to transfer a wafer from the first reaction region to the third reaction region via the second reaction region. The first gas source supplies a first gas to the first reaction region via a first gas pipe, and a second gas source supplies a second gas to the second reaction region via a second gas pipe. The reuse gas pipe is connected between the first reaction region and the third reaction region for supplying an unused first gas collected in the first reaction region to the third reaction region.

Provided is a valve device which can precisely adjust the flow rate while ensuring the flow rate of the fluid. A valve device includes a main actuator which receives a pressure of a supplied drive fluid and moves an operating member to an open position or closed position; an adjusting actuator arranged to receive at least a part of a force generated by the main actuator and for adjusting the position of the operating member positioned at the open position; and a pressure regulator provided in a feed path of the drive fluid to the main actuator and for regulating the pressure of the supplied drive fluid to suppress fluctuation of the pressure of the drive fluid supplied to the main actuator.