A method of making an atomic layer nanoribbon that includes forming a double atomic layer ribbon having a first monolayer and a second monolayer on a surface of the first monolayer, wherein the first monolayer and the second monolayer each contains a transition metal dichalcogenide material, oxidizing at least a portion of the first monolayer to provide an oxidized portion, and removing the oxidized portion to provide an atomic layer nanoribbon of the transition metal dichalcogenide material. Also provided are double atomic layer ribbons, double atomic layer nanoribbons, and single atomic layer nanoribbons prepared according to the method.

A gas system includes an enclosure, a process gas metering valve, a shutoff valve, and a flow switch. The process gas metering valve arranged within the enclosure to flow a process gas to a process chamber of a semiconductor processing system. The shutoff valve is connected to the process gas metering valve to fluidly separate the process gas metering valve from a process gas source. The flow switch is operably connected to the shutoff valve to cease flow of the process gas to the process chamber of the semiconductor processing system using the shutoff valve according to flow of a gas traversing the flow switch. Semiconductor processing systems, gas control methods, and gas system kits are also described.

A semiconductor manufacturing apparatus includes: a stage installed inside a processing chamber and holding a semiconductor substrate having a high-k insulating film including silicate; and a gas supply line including a first system supplying reactive gas to the processing chamber and a second system supplying catalytic gas to the processing chamber, wherein mixed gas which includes complex forming gas reacting with a metal element included in the high-k insulating film to form a first volatile organometallic complex and complex stabilizing material gas increasing stability of the first organometallic complex is supplied as the reactive gas, and catalytic gas using a second organometallic complex, which modifies the high-k insulating film and promotes a formation reaction of the first organometallic complex, as a raw material is supplied.

A system and method provides a more precise mole delivery amount of a process gas, for each pulse of a pulse gas delivery, by measuring a concentration of the process gas and controlling the amount of gas mixture delivered in a pulse of gas flow based on the received concentration of the process gas. The control of mole delivery amount for each pulse can be achieved by adjusting flow setpoint, pulse duration, or both.

A first and a second flange assembly configured for facilitating uniform and laminar flow in a system are provided. The first flange assembly includes a first flange body configured to introduce a gas into a chamber. The first flange assembly includes a plurality of outlet tubes disposed on an interior surface of the first flange body and a plurality of inlet tubes disposed on an exterior surface of the first flange body and in fluid communication with the plurality of outlet tubes. The second flange assembly includes a second flange body configured to remove the gas from the chamber. The second flange assembly includes a plurality of through holes extending from an interior surface to an exterior surface of the second flange body and a plurality of exit tubes extending from the exterior surface of the second flange body and in fluid communication with the plurality of through holes.

A substrate processing apparatus, includes a sealed pressure vessel, such as an Atomic Layer Deposition, ALD, apparatus, a fluid inlet assembly attached to a wall of the sealed pressure vessel, the fluid inlet assembly having a fluid inlet pipe passing through the wall, and a resilient element in the fluid inlet assembly around the fluid inlet pipe coupling the inlet pipe to the wall, where one of an interior surface and an exterior surface of the resilient element sees pressure prevailing within the pressure vessel and the other sees ambient pressure, and where the fluid inlet pipe prevents fluid carried inside from being in contact with the resilient element, and a relating method.

Disclosed is a method of forming a thin film using a surface protection material, the method comprising supplying the surface protection material to the inside of a chamber on which a substrate is placed so that the surface protection material is adsorbed to the substrate, discharging the unadsorbed surface protection material from the inside of the chamber by purging the interior of the chamber, supplying a metal precursor to the inside of the chamber so that the metal precursor is adsorbed to the substrate, discharging the unadsorbed metal precursor from the inside of the chamber by purging the interior of the chamber, and supplying a reaction material to the inside of the chamber so that the reaction material reacts with the adsorbed metal precursor to form the thin film.

A valve device includes a valve body; a cylindrical member provided in an accommodation recess and communicating with the first flow path; a valve seat supported by the cylindrical member; a seal member interposed between the periphery of the opening of first flow path on the bottom surface of the accommodation recess and the lower end portion of the cylindrical member; an annular plate which is flexible, air-tightly or liquid-tightly fixed to an annular support portion formed on the inner peripheral surface of the accommodation recess, air-tightly or liquid-tightly fixed to an annular support portion formed on the outer peripheral surface of the cylindrical member and has a plurality of openings communicating with the second flow path; and a diaphragm that moves between an open position at which the diaphragm does not contact the valve seat and a closed position at which the diaphragm contacts the valve seat.

Methods and systems for forming films on substrates in semiconductor processes are disclosed. The method includes providing different materials each contained in separate ampoules. Material is flowed from each ampoule into a separate portion of a showerhead contained within a process chamber via a heated gas line. From the showerhead, each material is flowed on to a substrate that sits on the surface of a rotating pedestal. Controlling the mass flow rate out of the showerhead and the rotation rate of the pedestal helps result in films with desirable material domain sizes to be deposited on the substrate.

The present disclosure relates to a substrate processing method and apparatus which can supply gas to a plurality of process chamber through one gas supply unit, and supply different gases at the same time, thereby improving the uniformity of the thicknesses of thin films deposited in the respective chambers.

The substrate processing method and apparatus can perform a process in only one chamber by supplying gas to only the chamber at the same time or perform different processes in the plurality of chambers by supplying different gases to the respective chambers. Therefore, films having uniform thicknesses can be deposited in the respective chambers, and the gas supply efficiency can be improved.