A method of forming a metal oxide layer includes at least the following steps. A substrate is provided in a process chamber of a deposition apparatus, where the substrate has a target layer formed thereon. A first gas and a second gas are introduced into the process chamber through a shower head of the deposition apparatus, so as to form a metal oxide film on the target layer, where the shower head is coated with a hydrophobic film. A patterned photoresist layer is formed on the metal oxide film. The metal oxide film is patterned by using the patterned photoresist layer as a mask, so as to form a patterned metal oxide film. The target layer is patterned by using the patterned metal oxide film as a mask.

A film formation apparatus includes a stage, a heater, a mist supply source, a superheated vapor supply source, and a delivery device. The stage is configured to allow a substrate to be mounted thereon. The heater is configured to heat the substrate. The mist supply source is configured to supply mist of a solution that comprises solvent and a film material dissolved in the solvent. The superheated vapor supply source is configured to supply a superheated vapor of a same material as the solvent. The delivery device is configured to deliver the mist and the superheated vapor toward a surface of the substrate to grow a film containing the film material on the surface of the substrate.

A diaphragm position of a valve may be detected and/or determined such that operation of the diaphragm may be monitored. A sensor included in the valve may generate sensor data that may be used to monitor the position of the diaphragm, which in turn may be used to determine a flow of a fluid through the valve. In this way, the sensor may be used to determine whether the diaphragm is properly functioning, may be used to identify and detect failures of the diaphragm, and/or may be used to quickly terminate operation of an associated deposition tool. This may reduce semiconductor substrate scrap, may reduce device failures on semiconductor substrates that are processed by the deposition tool, may increase semiconductor processing quality of the deposition tool, and/or may increase semiconductor processing yields of the deposition tool.

The present disclosure generally relates to gas inject apparatus for a process chamber for processing of semiconductor substrates. The gas inject apparatus include one or more gas injectors which are configured to be coupled to the process chamber. Each of the gas injectors are configured to receive a process gas and distribute the process gas across one or more gas outlets. The gas injectors include a plurality of pathways, a fin array, and a baffle array. The gas injectors are individually heated. A gas mixture assembly is also utilized to control the concentration of process gases flown into a process volume from each of the gas injectors. The gas mixture assembly enables the concentration as well as the flow rate of the process gases to be controlled.

A dry powder MOCVD vapor source system is disclosed that utilizes a gravimetric powder feeder, a feed rate measurement and feeder control system, an evaporator and a load lock system for continuous operation for thin film production, particularly of REBCO type high temperature superconductor (HTS) tapes.

A method of processing a semiconductor wafer is provided. The method includes installing upper lid. The installation of the upper lid includes placing an inlet manifold on a water box; inserting a jig into a lower gas channel in the water box and inserting into an upper gas channel in the inlet manifold; fastening the water box to the inlet manifold; and removing the jig after the water box engaging with the inlet manifold. The method also includes connecting a shower head on a lower side of the water box; and connecting the upper lid to a housing. The method further includes placing a semiconductor wafer into the housing. In addition, the method includes supplying a process gas over the semiconductor wafer through the upper gas channel, the lower gas channel and the shower head.

A semiconductor processing system is provided to form a capacitor dielectric layer in a metal-insulator-metal capacitor. The semiconductor processing system includes a precursor tank configured to generate a precursor gas from a metal organic solid precursor, a processing chamber configured to perform a plasma enhanced chemical vapor deposition, and at least one buffer tank between the precursor tank and the processing chamber. The at least one buffer tank is coupled to the precursor tank via a first pipe and coupled to the processing chamber via a second pipe.

The present disclosure provides an epitaxial device and a gas intake structure configured for the epitaxial device. The epitaxial device includes a chamber, a submount, a gas intake structure, and an exhaust structure. The gas intake structure includes: a plurality of first gas intake passages configured to provide a first process gas containing a gas for an epitaxial reaction to a to-be-processed surface along a first direction, the first direction being parallel to the to-be-processed surface; and two second gas intake passages that are arranged at intervals along a second direction, and correspond to two adjustment areas adjacent to edges on both sides of the to-be-processed surface respectively, where at least one first gas intake passage is disposed between the two second gas intake passages, each second gas intake passage provides a second process gas to the corresponding adjustment area along the first direction, and the second process gas is configured to adjust a concentration of the gas for the epitaxial reaction flowing through the adjustment areas. The epitaxial device and the gas intake structure provided by the embodiments of the present disclosure improve uniformity of thickness distribution of an epitaxial layer formed on the entire to-be-processed surface.

A gas supply device that supplies a processing gas to a processing container storing a substrate and performs a process includes: a raw material container configured to accommodate a liquid raw material or a solid raw material; a carrier gas supply configured to supply a carrier gas into the raw material container; a gas supply path configured to supply the processing gas, which includes the raw material that has been vaporized and the carrier gas, from the raw material container to the processing container; a flow meter provided in the gas supply path and configured to measure a flow rate of the processing gas; and a constricted flow path provided on a downstream side of the flow meter in the gas supply path and configured to increase an average pressure value between the constricted flow path and the flow meter in the gas supply path.

A thin film deposition system deposits a thin film on a substrate in a thin film deposition chamber. The thin film deposition system deposits the thin film by flowing a fluid into the thin film deposition chamber. The thin film deposition system includes a byproducts sensor that senses byproducts of the fluid in an exhaust fluid. The thin film deposition system adjusts the flow rate of the fluid based on the byproducts.