The invention provides an improved semiconductor deposition method, which comprises providing a deposition machine, the deposition machine includes a chamber connected with a pipeline, putting a first wafer into the chamber, and performing a pipeline cleaning step, the pipeline cleaning step includes: cutting off the path between the pipeline and the chamber by turning off a plurality of valve switches, and introducing a gas from the pipeline to move along a first path of the pipeline. Then, a deposition step is performed on the first wafer to deposit a first material layer on the surface of the first wafer, the deposition step includes opening a plurality of valve switches to communicate the path between the pipeline and the chamber, and introducing the gas into the chamber along a second path of the pipeline.

One or more embodiments described herein generally relate to methods and systems for forming films on substrates in semiconductor processes. In embodiments described herein, a process system includes different materials each contained in separate ampoules. Each material is flowed into a separate portion of a showerhead contained within a process chamber via a heated gas line. From the showerhead, each material is flowed on to a substrate that sits on the surface of a rotating pedestal. Controlling the mass flow rate out of the showerhead and the rotation rate of the pedestal helps result in films with desirable material domain sizes to be deposited on the substrate.

Herein disclosed are systems and methods related to semiconductor processing device including a manifold including a bore configured to deliver a gas to a reaction chamber, the manifold including a first block mounted to a second block, the first and second mounted blocks cooperating to at least partially define the bore. A supply channel provides fluid communication between a gas source and the bore, and the supply channel is disposed at least partially in the second block. A metallic seal is disposed about the bore at an interface between the first and second block. Advantageously, the metallic seal improves sealing between the interface between the first block and the second block.

A substrate processing apparatus includes processing parts performing substrate processing on target substrates, respectively, substrate mounting tables mounting the target substrates thereon in the respective processing parts, gas introducing members introducing processing gases into processing spaces, a common exhaust mechanism evacuating the processing spaces at once and further performing pressure control for the processing spaces at once, and a pressure measuring part configured to selectively monitor a pressure in any one of the plurality of processing spaces by using a pressure gauge. The pressure measuring part includes pipelines having pressure-measuring pipelines configured to connect the processing spaces to the pressure gauge and dummy pipelines configured to communicate with the processing spaces, which adjust a difference between a volume of the pipelines communicating with a monitored processing space of the processing spaces and a volume of the pipelines communicating with each of non-monitored processing spaces.

Apparatus and methods for supplying a vapor to a processing chamber such as a film deposition chamber are described. The vapor delivery apparatus comprises an inlet conduit and an outlet conduit, in fluid communication with an ampoule. A needle valve device restricts flow through the outlet conduit.

An apparatus for processing a substrate by supplying a processing gas to the substrate in a processing container. The apparatus comprises: a mounting table provided in the processing container and for mounting the substrate; a gas shower head comprising a gas diffusion space provided at a position facing the mounting table and for diffusing the processing gas, and a shower plate having a plurality of gas supply holes for supplying the processing gas diffused in the gas diffusion space to the processing container; a gas supply portion provided to supply the processing gas to the gas diffusion space and having a flow rate adjusting portion for the processing gas; a pressure sensor portion provided in the gas diffusion space and to output a pressure signal corresponding to a pressure measurement value in the gas diffusion space; and a controller to output a control signal for adjusting a flow rate of the processing gas.

A system and method provides a more precise mole delivery amount of a process gas, for each pulse of a pulse gas delivery, by measuring a concentration of the process gas and controlling the amount of gas mixture delivered in a pulse of gas flow based on the received concentration of the process gas. The control of mole delivery amount for each pulse can be achieved by adjusting flow setpoint, pulse duration, or both.

A powder coating device includes a reaction device, a driving device, a gas supply device, and a gas delivery device. The gas delivery device includes a rotating shaft and a sleeve. The rotating shaft is connected to an inner cylinder and the driving device, and a first gas path communicated with a reaction chamber is defined along an axis of the rotating shaft, and a plurality of gas holes for communicating the first gas path with outside of the rotating shaft are defined in the rotating shaft. The sleeve is sleeved on the rotating shaft, and a second gas path for the rotating shaft to pass through is defined in the sleeve, the second gas path is communicated with the gas supply device, and the plurality of the gas holes is located inside the second gas path.

Provided is a solid vaporization/supply system of metal halide for thin film deposition that reduces particle contamination. The system includes a vaporizable source material container for storing and vaporizing a metal halide and buffer tank coupled with the vaporizable source material container. The vaporizable source material container includes a container main body with a container wall; a lid body; fastening members; and joint members, wherein the container wall is configured to have a double-wall structure composed of an inner wall member and outer wall member, which allows a carrier gas to be led into the container main body via its space. The container wall is fabricated of 99 to 99.9999% copper, 99 to 99.9996% aluminum, or 99 to 99.9996% titanium, and wherein the container main body, the lid body, the fastening members, and the joint members are treated by fluorocarbon polymer coating and/or by electrolytic polishing.

A plasma source is provided that includes a body defining an input port, an output port, and at least one discharge section extending along a central longitudinal axis between the input port and the output port. The at least one discharge section includes a return electrode defining a first generally cylindrical interior volume having a first interior diameter, a supply plate comprising a supply electrode, the supply plate defining a second generally cylindrical interior volume having a second interior diameter, and at least one spacer defining a third generally cylindrical interior volume having a third interior diameter. The third interior diameter is different from the first or second interior diameter. The at least one discharge section is formed from the spacer arranged between the return electrode and the supply plate along the central longitudinal axis to define a generally cylindrical discharge gap for generating a plasma therein.