High productivity thin film deposition methods and tools are provided wherein a thin film semiconductor material layer with a thickness in the range of less than 1 micron to 100 microns is deposited on a plurality of wafers in a reactor. The wafers are loaded on a batch susceptor and the batch susceptor is positioned in the reactor such that a tapered gas flow space is created between the susceptor and an interior wall of the reactor. Reactant gas is then directed into the tapered gas space and over each wafer thereby improving deposition uniformity across each wafer and from wafer to wafer.

A window for a CVD system includes a processing chamber defining a gas inlet introducing gas into the processing chamber and a gas outlet to allow the gas to exit the processing chamber. A substrate support is within the processing chamber and receives a substrate. A transparent upper window includes a convex first face spaced from the substrate support to define an air gap therebetween. The upper window is within the processing chamber to direct the gas from the gas inlet, through the air gap, and to the gas outlet. The first face includes a radially outer surface and a radially inner surface circumscribed within the outer surface. The outer surface has a first radius of curvature and the inner surface has a second radius of curvature that is different from the first radius of curvature.

A gas distribution assembly and methods for adjusting the gas flow through a gas supply unit into a reaction chamber are disclosed. The gas distribution assembly and methods can be used to increase or decrease gas flow uniformly through the gas supply unit. The gas distribution assembly and methods can also be used to increase gas flow into one area of the reaction chamber, while decreasing gas flow into another area.

A gas distribution assembly and methods for adjusting the gas flow through a gas supply unit into a reaction chamber are disclosed. The gas distribution assembly and methods can be used to increase or decrease gas flow uniformly through the gas supply unit. The gas distribution assembly and methods can also be used to increase gas flow into one area of the reaction chamber, while decreasing gas flow into another area.

A slot-die type gas distribution device for photovoltaic manufacturing is provided. The slot-die type gas distribution device includes a first gas distribution device (105) at a process chamber inlet (104) and a second gas distribution device (13) at a process chamber outlet (11). The first gas distribution device (105) is connected to the process chamber inlet (104) through a flat quadrangular first communication device (9), and the second gas distribution device (13) is connected to the process chamber outlet (11) through a flat quadrangular third communication device (12). The device effectively improves the gas distribution uniformity in the process chamber.