The invention relates to a coating apparatus also called coating tunnel or coating hood for applying a protective coating to hollow glass containers. In particular it relates to a coating apparatus also called coating tunnel or coating hood with a guidance plate for the carrier gas comprising a coating compound for applying the protective coatings to glass containers. The present invention also relates to a coating apparatus also called coating tunnel or coating hood with a guidance plate installed between the inner side wall and the outer wall of the tunnel where the conveyer belt with the containers is passing by.

The present invention relates to a growth inhibitor for forming a thin film, a method for forming a thin film using the same, and a semiconductor substrate prepared therefrom, and more particularly, to a growth inhibitor for forming a thin film represented by Chemical Formula 1 below, a method for forming a thin film using the same, and a semiconductor substrate prepared therefrom.

AnBmXo  [Chemical Formula 1] wherein A is carbon or silicon, B is hydrogen or a C1-C3 alkyl, X is a halogen, n is an integer from 1 to 15, o is an integer of 1 or more, and m is from 0 to 2n+1.

According to present invention, it is possible to suppress side reactions to appropriately lower a thin film growth rate and remove process byproducts in the thin film, thereby preventing corrosion or deterioration and greatly improving step coverage and thickness uniformity of a thin film even when the thin film is formed on a substrate having a complicated structure.

A film forming device includes a bottom plate detachably provided on a bottom surface of a mist spray head. The bottom plate includes a raw material solution opening, reaction material openings, and inert gas openings formed in regions corresponding to a raw material solution ejection port, reaction material ejection ports, and inert gas ejection ports, when the bottom plate is attached to the bottom surface of the mist spray head.

A method for plasma coating an object includes an object profile, having the steps of: a) manufacturing a replaceable shield comprising a jet inlet, a nozzle outlet and a sidewall extending from the jet inlet to the nozzle outlet, wherein the nozzle outlet includes an edge essentially congruent to at least part of the object profile; b) detachably attaching the replaceable shield to a jet outlet of a plasma jet generator; c) placing the object at the nozzle outlet such that the object profile fits closely to the nozzle outlet edge; d) plasma coating the object with a low-temperature, oxygen-free plasma at an operating pressure which is higher than the atmospheric pressure by providing a plasma jet in the shield via the plasma jet generator and injecting coating precursors in the plasma jet in the shield.

Inside a heating space of a heating chamber, a first heating treatment of moving a substrate along a substrate moving direction is performed by a first conveyor. After that, first conveyance processing of moving the substrate along a conveying direction is performed by a second conveyor. At this time, source mist is sprayed on the substrate by first thin film forming nozzles. Subsequently, second heating treatment is performed by a third conveyor. After that, second conveyance processing is performed by a fourth conveyor. At this time, source mist is sprayed on the substrate by second thin film forming nozzles.

A substrate processing apparatus includes a reaction chamber including an inlet through which a reaction gas is supplied and an outlet through which residue gas is exhausted; a plurality of ionizers located at a front end of the inlet and configured to ionize the reaction gas supplied through the inlet; and a heater configured to heat the reaction chamber. The plurality of ionizers include a first ionizer configured to ionize the reaction gas positively; and a second ionizer configured to ionize the reaction gas negatively.

A method of making a coated substrate having a transparent conductive oxide layer with a dopant selectively distributed in the layer includes selectively supplying an oxide precursor material and a dopant precursor material to each coating cell of a multi-cell chemical vapor deposition coater, wherein the amount of dopant material supplied is selected to vary the dopant content versus coating depth in the resultant coating.

A chemical vapor deposition process for depositing a coating comprising silicon oxide and titanium oxide is provided. A coating formed by the chemical vapor deposition process is also provided.

Disclosed are a high-temperature, high-performance capacitor thin film continuous production device and method. A thin film (3) to be processed is released by an unwinding roller (1), the position of the thin film to be processed is adjusted by an unwinding adjustment roller (2), such that the thin film is guaranteed to be located at the middle position of a discharge gap (12), and the thin film to be processed then passes through a plasma deposition area, the position of the processed thin film (7) is adjusted by a winding adjustment roller (4), and the processed thin film, after adjustment, is wound by a winding roller (6) after being drawn by a drawing roller (5), with the winding roller being an inflatable roller. The steady and controllable movement of the thin film in the deposition area is achieved. Large-scale continuous production, capable of matching the existing production speed of a polymer capacitor thin film, can be achieved using the device, wherein same has the advantages of flexible configuration, low environmental requirements, strong universality, a fast processing speed, low production costs and no pollution.

The present invention relates to a manufacturing method for a diamond-like carbon diaphragm, comprising the steps of: placing a base material in the air; a step of depositing a composite diamond-like carbon diaphragm comprises: importing a carbon-containing gas from one end of an atmospheric pressure plasma chemical vapor deposition device, importing a main gas from the other end of the atmospheric pressure plasma chemical vapor deposition device; bringing the ionized carbon-containing gas out of the atmospheric pressure plasma chemical vapor deposition device by the main gas and depositing the same on the surface of the base material to form a composite diamond-like carbon diaphragm; a step of forming a diamond-like carbon vibrating diaphragm comprises: cutting from the composite diamond-like carbon diaphragm a diamond-like carbon vibrating diaphragm having the required diameter, forming a diamond-like carbon vibrating diaphragm having the required shape by means of a compressing process.