HIGH-TEMPERATURE, HIGH-PERFORMANCE CAPACITOR THIN FILM CONTINUOUS PRODUCTION DEVICE AND METHOD

Abstract

Disclosed are a high-temperature, high-performance capacitor thin film continuous production device and method. A thin film (3) to be processed is released by an unwinding roller (1), the position of the thin film to be processed is adjusted by an unwinding adjustment roller (2), such that the thin film is guaranteed to be located at the middle position of a discharge gap (12), and the thin film to be processed then passes through a plasma deposition area, the position of the processed thin film (7) is adjusted by a winding adjustment roller (4), and the processed thin film, after adjustment, is wound by a winding roller (6) after being drawn by a drawing roller (5), with the winding roller being an inflatable roller. The steady and controllable movement of the thin film in the deposition area is achieved. Large-scale continuous production, capable of matching the existing production speed of a polymer capacitor thin film, can be achieved using the device, wherein same has the advantages of flexible configuration, low environmental requirements, strong universality, a fast processing speed, low production costs and no pollution.

Claims

1. A kind of high-temperature, high-performance capacitor thin film continuous production device, characterized in that consisting of an unwinding roller (1), an unwinding adjustment roller (2), a plasma deposition area, a winding adjustment roller (4), a drawing roller (5), and a winding roller (6) which are arranged in sequence, and there are a top electrode (8), an upper barrier dielectric plate (10), a lower barrier dielectric plate (11), and a bottom electrode (9) sequentially arranged in the said plasma deposition area from top to bottom, wherein the said upper barrier dielectric plate (10) is closely attached to the said top electrode (8), and the said lower barrier dielectric plate (11) is closely attached to the said bottom electrode (9), and there is discharge gap (12) left between the said upper barrier dielectric plate (10) and the lower barrier dielectric plate 11, in addition, there are several air inlet gaps 13 equidistantly arranged on the said top electrode (8), and also several air inlet gaps 13 equidistantly are arranged on the said upper barrier dielectric plate (10), furthermore, the said air inlet gaps 13 are connected to the air inlet ducks 14. In addition, the thin film to be processed (3) released by the said unwinding roller (1) is wound by the said winding roller (6) after passing through the said unwinding adjustment roller (2), the discharge gap (12), the winding adjustment roller (4) and the drawing roller (5) in sequence.

2. The kind of high-temperature, high-performance capacitor thin film continuous production device according to claim 1, characterized in that: the height direction of the said top electrode (8) and the said upper barrier dielectric plate (10) and/or the said lower barrier dielectric plate (11) and of the said bottom electrode (9) can be adjusted up and down.

3. The kind of high-temperature, high-performance capacitor thin film continuous production device according to claim 1, characterized in that: the central axes of the said unwinding roller (1), the unwinding adjustment roller (2), the winding adjustment roller (4), the drawing roller (5) and the winding roller (6) are arranged in parallel.

4. The kind of high-temperature, high-performance capacitor thin film continuous production device according to claim 1, characterized in that: both said unwinding roller (1) and the said winding-up roller (6) are inflatable rollers.

5. A kind of method for high-temperature, high-performance capacitor thin film continuous production, which consists of following steps: a: Fix the thin film to be processed (3) on the unwinding roller (1), and adjust the thin film to be processed (3) to the middle position of the discharge gap (12) in the plasma deposition area by rotating and unwinding the unwinding roller (1); b: The top electrode (8) is connected to a high-voltage power supply, and the bottom electrode (9) is grounded. After the power is turned on, at least one working gas and a precursor are inlet through the air inlet duct (14) to force atmospheric pressure low-temperature plasma to be generated in the discharge gap (12); c: The thin film to be processed (3) passes through the deposition area, and the precursor undergoes certain physical and chemical changes under the action of the plasma to deposit at least one functional layer on the surface of the thin film to be processed (3); d: The thin film to be processed (3) is powered by the drawing roller (5) after passing through the deposition area, and the processed thin film (7) is wound by the winding roller (6).

6. The kind of method for high-temperature, high-performance capacitor thin film continuous production according to claim 5, characterized in that: the rotate speed of the said drawing roller (5) is adjustable, and the running speed of the thin film can be adjusted by adjusting the rotate speed of the said drawing roller (5), and thus changes the residence time of the said thin film to be processed (3) in the deposition area, so that changes the thickness of the deposition layer.

7. The kind of method for high-temperature, high-performance capacitor thin film continuous production according to claim 5, characterized in that: the said functional layer consists of a high insulation performance layer and a high dielectric constant layer.

8. The kind of method for high-temperature, high-performance capacitor thin film continuous production according to claim 5, characterized in that: the said functional layer consists of monolayer deposition or multilayer of different substances deposition.

9. The kind of method for high-temperature, high-performance capacitor thin film continuous production according to claim 5, characterized in that: the said precursor consists of any one or more of tetraethyl orthosilicate, ammonia gas, silane, tantalum ethoxide, zirconium ethoxide, and hafnium ethoxide, and the said working gas consists of any one or more of helium, argon, nitrogen, air, and oxygen.

10. The kind of method for high-temperature, high-performance capacitor thin film continuous production according to claim 5, characterized in that: the said high-voltage power supply is a nanosecond pulse high-voltage power supply, a microsecond pulse high-voltage power supply, a high-frequency sinusoidal high-voltage power supply, or a radio-frequency power supply.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0028] For the purpose of explaining the embodiments of the present invention or the technical scheme in the prior art more clearly, the text below will briefly introduce the drawings that need to be used in the embodiments. Obviously, the drawings described in the following are only some of the embodiments of the present invention, and for those of ordinary skill in the art, other drawings can be obtained according to these drawings without paying any creative labor.

[0029] FIG. 1 is a schematic diagram of the present invention;

[0030] FIG. 2 is a schematic diagram of the cross section of the top electrode and the upper barrier dielectric plate of the present invention;

[0031] Wherein, consists of the unwinding roller 1, the unwinding adjustment roller 2, the thin film to be processed 3, the winding adjustment roller 4, the drawing roller 5, the winding roller 6, the processed thin film 7, the top electrode 8, the bottom electrode 9, the upper barrier dielectric plate 10, the lower barrier dielectric plate 11, the discharge gap 12, the air inlet gap 13, and the air inlet duct 14.

DETAILED DESCRIPTION OF THE INVENTION

[0032] The technical scheme of the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments can be obtained by those of ordinary skill in the art without paying creative work shall fall within the protection scope of the present invention.

[0033] For the purpose of making the above objectives, characteristics, and advantages of the present invention simpler and more understandable, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0034] Referring to FIGS. 1-2, the present invention provides a kind of high-temperature, high-performance capacitor thin film continuous production device, which consists of an unwinding roller 1, an unwinding adjustment roller 2, a plasma deposition area, a winding adjustment roller 4, a drawing roller 5, and a winding roller 6 which are arranged in sequence, and there are a top electrode 8, an upper barrier dielectric plate 10, a lower barrier dielectric plate 11, and a bottom electrode 9 sequentially arranged in the plasma deposition area from top to bottom, wherein the upper barrier dielectric plate 10 is closely attached to the top electrode 8, and the lower barrier dielectric plate 11 is closely attached to the bottom electrode 9, and there is discharge gap 12 left between the upper barrier dielectric plate 10 and the lower barrier dielectric plate 11, in addition, there are several air inlet gaps 13 equidistantly arranged on the top electrode 8, and also several air inlet gaps 13 equidistantly are arranged on the upper barrier dielectric plate 10, furthermore, the air inlet gaps 13 are connected to the air inlet ducks 14. The unwinding roller 1 is an inflatable roller, and the position of the thin film to be processed 3 released by the unwinding roller 1 is adjusted by the unwinding adjustment roller 2, such that the thin film to be processed 3 is guaranteed to be located at the middle position of the discharge gap 12, and then the thin film to be processed 3 passes through the plasma deposition area, and the position of the processed thin film 7 is adjusted by the winding adjustment roller 4, and the processed thin film 7, after adjustment, is wound by the winding roller 6 after being drawn by the drawing roller 5, and the winding roller 6 is also an inflatable roller, which realizes the steady and controllable movement of the thin film in the deposition area.

[0035] To further optimize the scheme, the high-temperature, high-performance capacitor thin film continuous production device also comprises a frame (not shown in the figure). The top electrode 8 and the upper barrier dielectric plate 10 and/or the lower barrier dielectric plate 11 and the bottom electrode 9 achieve the adjustment of height direction through the frame, and the discharge gap is set between 0.2 mm-20 mm to guarantee uniform and stable plasma discharge to be generated in the discharge gap.

[0036] To further optimize the scheme, the central axes of the unwinding roller 1, the unwinding adjustment roller 2, the winding adjustment roller 4, the drawing roller 5 and the winding roller 6 are arranged in parallel, and the unwinding roller 1, the unwinding adjustment roller 2, the winding adjustment roller 4, the drawing roller 5 and the winding roller 6 are fixed to the frame, as well as the unwinding adjustment roller 2 and the winding adjustment roller 4 are adjusted up and down in the height direction, and thus guarantees the central axis of the thin film coincides with the central axis of the plasma deposition area, wherein, the specific structure can be embodied as an air cylinder is equipped on the frame, and one end of the air cylinder is connected to the frame, and the other end is connected to the unwinding adjustment roller 2 or the winding adjustment roller 4, and the adjustment of the height direction of the unwinding adjustment roller 2 or the winding adjustment roller 4 is driven by the telescopic movement of the air cylinder, and thus guarantees the steady continuity of production.

[0037] A kind of method for high-temperature, high-performance capacitor thin film continuous production, which consists of following steps:

[0038] a: Fix the thin film to be processed 3 on the unwinding roller 1, and adjust the thin film to be processed 3 to the middle position of the discharge gap 12 in the plasma deposition area by rotating and unwinding the unwinding roller 1;

[0039] b: The top electrode 8 is connected to a high-voltage power supply, and the bottom electrode 9 is grounded. After the power is turned on, at least one working gas and a precursor are inlet through the air inlet duct 14 to force atmospheric pressure low-temperature plasma to be generated in the discharge gap 12;

[0040] c: The thin film to be processed 3 passes through the deposition area, and the precursor undergoes certain physical and chemical changes under the action of the plasma to deposit at least one functional layer on the surface of the thin film to be processed 3;

[0041] d: The thin film to be processed 3 is powered by the drawing roller 5 after passing through the deposition area, and the processed thin film 7 is wound by the winding roller 6.

[0042] To further optimize the scheme, the rotate speed of the drawing roller 5 is adjustable, and the running speed of the thin film can be adjusted by adjusting the rotate speed of the drawing roller 5, and thus changes the residence time of the thin film to be processed 3 in the deposition area, so that changes the thickness of the deposition layer.

[0043] To further optimize the scheme, a flow meter is installed on the air inlet duct 14, and the flow rate is controlled at 0.5-20 L/min, and thus guarantees uniform and dense deposition.

[0044] To further optimize the scheme, the functional layer consists of a high insulation performance layer and a high dielectric constant layer.

[0045] To further optimize the scheme, at least one precursor and working gas can be inlet at the same time by the air inlet duct 14, and thus forms a monolayer deposition on the surface of the thin film, in addition, the intake duct 14 can also be divided into two parts at least along the production direction, which may inlet at least one different type of working gas and the precursor respectively, and thus forms multilayer of different substances deposition on the surface of the thin film.

[0046] To further optimize the scheme, the precursor consists of any one or more of ethyl orthosilicate, ammonia gas, silane, tantalum ethoxide, zirconium ethoxide, and hafnium ethoxide, and the working gas consists of any one or more of helium, argon, nitrogen, air, and oxygen, wherein, the precursor may be a gas or a liquid, and the gas can be inlet directly through the air inlet duct 14, and the liquid can be blown into the deposition area through the working gas passing through the air inlet duct 14.

[0047] Further, a high-insulating silicon dioxide layer is deposited by using the precursor of tetraethyl orthosilicate, a high-insulating silicon nitride layer is deposited by using the precursors of ammonia gas and silane, and a high dielectric constant tantalum pentoxide layer is deposited by using tantalum ethoxide, and a high-dielectric constant zirconium dioxide layer is deposited by using zirconium ethoxide, as well as a high-dielectric constant hafnium dioxide layer is deposited by using hafnium ethoxide.

[0048] To further optimize the scheme, the said high-voltage power supply is a nanosecond pulse high-voltage power supply, a microsecond pulse high-voltage power supply, a high-frequency sinusoidal high-voltage power supply, or a radio-frequency power supply. The power supply parameter adjustment takes the ability of generating uniform and stable plasma discharge as standard, and the power supply parameters consist of voltage magnitude, discharge frequency, pulse width, and pulse rising time, etc., and thus guarantee uniform and stable plasma discharge is generated in the dielectric barrier discharge gap.

[0049] To further optimize the scheme, the polymer thin film to be processed is a variety of polymer capacitor thin films currently available, including but not limited to polypropylene thin film, polyester thin film, polycarbonate thin film, polyimide thin film, polyetherimide, polyether-ether-ketone thin film, and polyphenylene sulfide thin film, etc.

[0050] The present invention realizes the large-scale continuous deposition of the functional layer on the surface of the polymer capacitor thin film, and uses the unique properties of the functional layer, such as high insulation performance and high dielectric constant performance, to improve the charge and discharge efficiency and energy storage density of the polymer capacitor thin film respectively under the action of high temperature and high electric field, and also can improve the above properties by stratified deposition. The present invention can realize large-scale continuous production, and can match the existing production speed of the polymer capacitor thin film, as well as has the advantages of flexible configuration, low environmental requirements, strong universality, fast processing speed, low production costs, and no pollution.

[0051] In the description of the present invention, it should be understood that the terms of “longitudinal”, “lateral”, “upper”, “lower”, “front”, “rear”, “left”, “right”, “vertical”, “horizontal”, “top”, “bottom”, “inner”, and “outer”, etc., which indicate the orientation or positional relationship, are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present invention, rather than indicating or implying that the referred device or element must have a specific orientation, or to be configured and operated in a specific orientation, and thus cannot be understood as a limitation of the present invention.

[0052] The above-mentioned embodiments only describe the preferred modes of the present invention, rather than limit the scope of the present invention. In the premise of not departing from the design spirit of the present invention, any variation and improvement of the technical scheme of the present invention made by those of ordinary skill in the art shall fall within the protection scope determined by the claims of the present invention.