A semiconductor manufacturing apparatus including a process chamber and a boat having a support member supporting substrates arranged in a first direction. An inner tube encloses the boat and includes a slit along a side wall. A nozzle supplies a process gas and includes a gas injection port at a position corresponding to the slit. The gas injection port includes a first inlet and first outlet. The slit includes a second inlet and second outlet. A distance to an end of the first inlet from a center line that connects a center of the first inlet and a center of the second outlet is different from the distance from the center line to an end of the first outlet and/or a distance from the center line to an end of the second inlet is different from a distance from the center line to an end of the second outlet.

The present invention relates to a manufacturing method for a diamond-like carbon diaphragm, comprising the steps of: placing a base material in the air; a step of depositing a composite diamond-like carbon diaphragm comprises: importing a carbon-containing gas from one end of an atmospheric pressure plasma chemical vapor deposition device, importing a main gas from the other end of the atmospheric pressure plasma chemical vapor deposition device; bringing the ionized carbon-containing gas out of the atmospheric pressure plasma chemical vapor deposition device by the main gas and depositing the same on the surface of the base material to form a composite diamond-like carbon diaphragm; a step of forming a diamond-like carbon vibrating diaphragm comprises: cutting from the composite diamond-like carbon diaphragm a diamond-like carbon vibrating diaphragm having the required diameter, forming a diamond-like carbon vibrating diaphragm having the required shape by means of a compressing process.

In a film forming device, a mist spray head includes: an inert gas spray part between a raw material solution spray nozzle and a reaction material spray nozzle; and an inert gas spray part between the raw material solution spray nozzle and a reaction material spray nozzle. Accordingly, an inert gas ejection port is provided between a raw material solution ejection port and a reaction material ejection port, and an inert gas ejection port is provided between the raw material solution ejection port and a reaction material ejection port.

A semiconductor manufacturing apparatus including a process chamber and a boat having a support member supporting substrates arranged in a first direction. An inner tube encloses the boat and includes a slit along a side wall. A nozzle supplies a process gas and includes a gas injection port at a position corresponding to the slit. The gas injection port includes a first inlet and first outlet. The slit includes a second inlet and second outlet. A distance to an end of the first inlet from a center line that connects a center of the first inlet and a center of the second outlet is different from the distance from the center line to an end of the first outlet and/or a distance from the center line to an end of the second inlet is different from a distance from the center line to an end of the second outlet.

Nano-multilayered coatings and fabrication methods are disclosed. By exemplary disclosure, a nano-multilayered coating fabricated from sequential depositions on a substrate from an atmospheric-plasma chemical vapor deposition (AP-CVD) source is disclosed. The coating includes a vapor precursor fed to the deposition source, an amorphous oxide layer deposited from the deposition source onto the substrate, and a nanoparticle layer deposited onto the substrate on top of the amorphous oxide layer. A nano-multilayered coating of the amorphous oxide and nanoparticle layers is fabricated from alternating deposition coatings of the amorphous oxide layer and the nanoparticle layer onto the substrate two or more times.

The invention relates to a coating apparatus also called coating tunnel or coating hood for applying a protective coating to hollow glass containers. In particular it relates to a coating apparatus also called coating tunnel or coating hood with a guidance plate for the carrier gas comprising a coating compound for applying the protective coatings to glass containers. The present invention also relates to a coating apparatus also called coating tunnel or coating hood with a guidance plate installed between the inner side wall and the outer wall of the tunnel where the conveyer belt with the containers is passing by.

A hem flange treatment method. The method includes air plasma direct spraying a hem flange at an outer edge of an outer panel thereof with a plasma polymer direct spray to cover the outer edge with a protective direct spray region. The method further includes air plasma overspraying an inner cut edge of an inner panel of the hem flange with a plasma polymer overspray to form a protective overspray region that covers the inner cut edge.

A method for plasma coating a compressible structure, includes the steps of: compressing the compressible structure thereby removing air from the compressible structure; and coating the compressed structure according to the following steps: a) ionizing a plasma gas at a temperature of 150? C. or lower, and at about atmospheric pressure, thereby creating a plasma; b) introducing a precursor into said plasma, thereby obtaining a precursor-comprising plasma; c) exposing the compressed structure to said precursor-comprising plasma, thereby forming a coating onto surfaces of the structure.

In a film forming device, a mist spray head includes: an inert gas spray part between a raw material solution spray nozzle and a reaction material spray nozzle; and an inert gas spray part between the raw material solution spray nozzle and a reaction material spray nozzle. Accordingly, an inert gas ejection port is provided between a raw material solution ejection port and a reaction material ejection port, and an inert gas ejection port is provided between the raw material solution ejection port and a reaction material ejection port.

A system and method are described for depositing a material onto a receiving surface, where the material is formed by use of a plasma to modify a source material in-transit to the receiving surface. The system comprises a microwave generator electronics stage. The system further includes a microwave applicator stage including a cavity resonator structure. The cavity resonator structure includes an outer conductor, an inner conductor, and a resonator cavity interposed between the outer conductor and the inner conductor. The system also includes a multi-component flow assembly including a laminar flow nozzle providing a shield gas, a zonal flow nozzle providing a functional process gas, and a source material flow nozzle configured to deliver the source material. The source material flow nozzle and zonal flow nozzle facilitate a reaction between the source material and the functional process gas within a plasma region.