Embodiments of process kits for use in a process chamber are provided herein. In some embodiments, a cover ring for use in a process chamber includes: an annular body that includes an upper surface and a lower surface, an inner lip extending radially inward and downward from the annular body, and a plurality of protrusions extending downward from the inner lip and disposed at regular intervals along the inner lip, wherein lowermost surfaces of the plurality of protrusions together define a planar substrate contact surface.

A transport system of the in-line coater moves the substrate holder from chamber to chamber in a direction perpendicular to the axis of its rotation and in each process chamber. The system moves the substrate holder to the working area along its axis of rotation. The process chamber has a cavity the size of which is determined by the dimensions of the substrate holder and is sufficient to place technology devices and monitoring instruments in it. In the first embodiment of the in-line coater, the supporting frame of the transport system on which the substrate holder is cantilevered, is configured to move from the chamber to the chamber both in horizontal and vertical positions. In the second embodiment of the in-line coater the supporting frame is configured to move only in a vertical position, and the in-line coater comprises additionally a substrate holder return chamber.

Inside a heating space of a heating chamber, a first heating treatment of moving a substrate along a substrate moving direction is performed by a first conveyor. After that, first conveyance processing of moving the substrate along a conveying direction is performed by a second conveyor. At this time, source mist is sprayed on the substrate by first thin film forming nozzles. Subsequently, second heating treatment is performed by a third conveyor. After that, second conveyance processing is performed by a fourth conveyor. At this time, source mist is sprayed on the substrate by second thin film forming nozzles.

A substrate processing method in substrate processing apparatus comprises repeating cycle including: supplying source gas into process container causing the source gas to be adsorbed to substrate; exhausting excess source gas from the process container; supplying reaction gas into the process container causing the reaction gas to react with the source gas; and exhausting excess reaction gas, wherein at least one of a gap width between placement stage and member forming processing space between the member and the stage and degree of opening of pressure adjustment valve in at least one of the supplying the source gas and the supplying the reaction gas is smaller than at least one of a gap width between the stage and the member and the degree of opening of the pressure adjustment valve in at least one of the exhausting the excess source gas and the exhausting the excess reaction gas, respectively.

A method for manufacturing a metal plate, the metal plate including a first surface and a second surface positioned on the opposite side of the first surface, may include a step of rolling a base metal having an iron alloy containing nickel to produce the metal plate. The metal plate may include particles containing as a main component an element other than iron and nickel. In a sample including the first surface and the second surface of the metal plate, the following conditions (1) and (2) regarding the particles may be satisfied: (1) The number of the particles having an equivalent circle diameter of 1 μm or more is 50 or more and 3000 or less per 1 mm.sup.3 in the sample, and (2) The number of the particles having an equivalent circle diameter of 3 μm or more is 50 or less per 1 mm.sup.3 in the sample.

A substrate support assembly arranged in a chamber includes: a support plate including a first surface on which a substrate is seated; a driver configured to tilt the support plate such that the first surface is inclined with respect to a reference surface by a lower inclination angle; and a controller configured to control the driver such that the lower inclination angle is adjusted based on an upper inclination angle formed by the inclination of the gas supplier coupled to the upper surface of the chamber with respect to the reference surface.

An electrostatic chuck (ESC) is provided. An ESC body is provided. An organic coating is disposed on at least a surface of the ESC body

A susceptor including a generally circular body having a face with a radially inward section and a radially outward section proximate a circumference of the body, the radially outward section having at least one ring extending upward for contacting a bottom surface of a substrate, and wherein the radially inward section lacks a ring extending upward from the face.

A method of microfabrication is provided. A substrate having a working surface and having a backside surface opposite to the working surface is received. The substrate has an initial wafer bow resulting from one or more micro fabrication processing steps executed on the working surface of the substrate. The initial wafer bow of the substrate is measured and the initial wafer bow is used to generate an initial wafer bow value that identifies a degree of first order wafer bowing of the substrate. A correction film recipe based on the initial wafer bow value is identified. The correction film recipe specifies parameters of a correction film to be deposited on the backside surface of the substrate to change wafer bow of the substrate from the initial wafer bow to a modified wafer bow. The correction film on the backside surface of the substrate according to the correction film recipe is deposited. The correction film physically modifies internal stresses on the substrate and causes the substrate to have a modified bow with the predetermined wafer bow value.

A method of depositing a material on one of two, but not both, sidewalls of a raised structure formed on a substrate includes tilting a normal of the substrate away from a source of the deposition material or tilting the source of the deposition material away from the normal of the substrate. The method may be implemented by a plasma-enhanced chemical vapor deposition (PECVD) technique.