Inside a heating space of a heating chamber, a first heating treatment of moving a substrate along a substrate moving direction is performed by a first conveyor. After that, first conveyance processing of moving the substrate along a conveying direction is performed by a second conveyor. At this time, source mist is sprayed on the substrate by first thin film forming nozzles. Subsequently, second heating treatment is performed by a third conveyor. After that, second conveyance processing is performed by a fourth conveyor. At this time, source mist is sprayed on the substrate by second thin film forming nozzles.

According to an embodiment of the present disclosure, a thin film forming apparatus includes a chamber, a plurality of gas inlets that are formed at an upper portion of the chamber and receive at least two reaction gas and precursors for radical reaction, and a radical unit configured to generate radicals by reacting the reaction gas provided through the gas inlet and deposit a thin film on a substrate by spraying the radicals and the precursors downward. The radical unit is configured with a plurality of plates, a precursor spray path is configured to be sprayed from the radical unit after the precursors are sprayed to a plurality of paths greater than precursor spray paths of the gas inlet in an uppermost plate among the plurality of plates, and a reaction gas spray path is configured not to overlap with the precursor spray path.

Examples of a substrate processing device include an annular distribution ring, a plurality of connection plates continued to the distribution ring and having non-uniform impedances, a shower plate electrically connected to the plurality of connection plates, and a stage provided below the shower plate so as to face the shower plate.

A method for manufacturing a metal plate, the metal plate including a first surface and a second surface positioned on the opposite side of the first surface, may include a step of rolling a base metal having an iron alloy containing nickel to produce the metal plate. The metal plate may include particles containing as a main component an element other than iron and nickel. In a sample including the first surface and the second surface of the metal plate, the following conditions (1) and (2) regarding the particles may be satisfied: (1) The number of the particles having an equivalent circle diameter of 1 μm or more is 50 or more and 3000 or less per 1 mm.sup.3 in the sample, and (2) The number of the particles having an equivalent circle diameter of 3 μm or more is 50 or less per 1 mm.sup.3 in the sample.

A substrate carrier includes a substrate carrier plate having a front-sided substrate carrier surface on which at least one substrate receiving area is provided for receiving a respective substrate. The substrate carrier is intended to enable a secure support of the substrate and a simple, damage-free removal of the substrate from the substrate carrier when operating in a fast manner, preferably without impairment of the characteristics of the substrate or the substrate processing. Therefore, the substrate receiving area has an interior area and an exterior area running around the interior area. The exterior area has spaced plateaus which are raised compared to a surface of the interior area for the support of edge areas of the substrates. Ventilation channels are provided between the plateaus.

Examples of a substrate processing apparatus includes a chamber, a susceptor provided in the chamber, a flow control ring of an insulator that is mounted on the chamber and surrounds the susceptor, a shower plate opposed to the susceptor, and a metal film that is formed on a lower surface of the flow control ring while exposing an upper surface of the flow control ring, and is in contact with the chamber.

A vapor deposition structure includes: a vapor deposition crucible, a nozzle and a floating plate. The vapor deposition crucible is configured to receive a vapor deposition source material, and the vapor deposition source material transitions from a liquid state to a gaseous state after being heated. The nozzle is disposed at an outlet of the vapor deposition crucible. The nozzle is configured to spray the vapor deposition source material in the gaseous state onto a surface of a substrate under vapor deposition. The floating plate is configured to float on a surface of the vapor deposition source material in the liquid state. The floating plate is provided with a plurality of hollowed-out structures. The plurality of hollowed-out structures are configured to allow the vapor deposition source material in the gaseous state to pass through.

A reactor system and related methods are provided which may include a heating element in a wafer tray. The heating element may be used to heat the wafer tray and a substrate or wafer seated on the wafer tray within a reaction chamber assembly, and may be used to cause sublimation of a native oxide of the wafer.

A substrate support assembly arranged in a chamber includes: a support plate including a first surface on which a substrate is seated; a driver configured to tilt the support plate such that the first surface is inclined with respect to a reference surface by a lower inclination angle; and a controller configured to control the driver such that the lower inclination angle is adjusted based on an upper inclination angle formed by the inclination of the gas supplier coupled to the upper surface of the chamber with respect to the reference surface.

A substrate processing method in substrate processing apparatus comprises repeating cycle including: supplying source gas into process container causing the source gas to be adsorbed to substrate; exhausting excess source gas from the process container; supplying reaction gas into the process container causing the reaction gas to react with the source gas; and exhausting excess reaction gas, wherein at least one of a gap width between placement stage and member forming processing space between the member and the stage and degree of opening of pressure adjustment valve in at least one of the supplying the source gas and the supplying the reaction gas is smaller than at least one of a gap width between the stage and the member and the degree of opening of the pressure adjustment valve in at least one of the exhausting the excess source gas and the exhausting the excess reaction gas, respectively.