In some examples, an automated tilting system is provided for adjusting an orientation of a component in a substrate processing chamber. The automated tilting system comprises at least one tilt adjustment motor arranged to cooperate with the component and be connected to a portion of the component by a coupling. The coupling is configured such that automated rotational motion by the at least one tilt adjustment motor imparts corresponding axial movement, relative to the at least one tilt adjustment motor or a datum structure, to the connected portion of the component to adjust the orientation of the component in the processing chamber.

The present invention provides a plasma processing method for subjecting a sample on which a metal element-containing film is disposed to plasma etching in a processing chamber. The method comprises: subjecting an inside of the processing chamber to plasma cleaning using a boron element-containing gas; removing the boron element using plasma after the plasma cleaning; subjecting the inside of the processing chamber to plasma cleaning using a fluorine element-containing gas after removing the boron element; depositing a deposited film in the processing chamber by plasma using a silicon element-containing gas after the plasma cleaning using the fluorine element-containing gas; and subjecting the sample to plasma etching after depositing the deposited film.

Embodiments of the disclosure are directed to index-gradient antireflective coatings that include a differential concentration of nanovoids versus thickness of the coating. In one embodiment, an index-gradient antireflective coating may have an index of refraction that varies from a first value to that of a second material. In another embodiment, the substrate may be optically transparent, and made of, for example, polymer, glass, or ceramics. The index-gradient antireflective coating can be fabricated using a non-uniform spin-coating process, by successive thermal evaporation, or by a chemical vapor deposition (CVD) process. In another embodiment, the spin-coating process can include multiple steps that include different concentrations of monomers to solvent, different spin-speeds, or different annealing times/temperatures. Similarly, the thermal evaporation can include multiple steps that include different concentrations of monomers, initiators, solvents, and associated processing parameters. Various other methods, systems, apparatuses, and materials are also disclosed.

In some examples, an exclusion ring locates a substrate on a substrate-support assembly in a processing chamber. An example exclusion ring comprises an inner edge portion to cover an edge of a substrate in the processing chamber and an outer edge portion to support the exclusion ring on the substrate support assembly in the processing chamber. The outer edge portion may include an outer edge of the exclusion ring. A separation zone extending between the inner edge portion and the outer edge of the exclusion ring includes an undercut in an undersurface of the exclusion ring. In some examples, a cooling gas is directed at the exclusion ring while the exclusion ring is located at a station or during an indexing operation performed by the exclusion ring within a processing tool.

Cooling systems for the cooling of various sections of a gas phase reactor system, including a gas distribution sections and lower chamber sections, are disclosed. Exemplary cooling systems include cooling plates to regulate the temperature of the gas phase reactor system.

Exemplary substrate support assemblies may include an electrostatic chuck body defining a support surface that defines a substrate seat. The substrate support surface may include a dielectric coating. The substrate support assemblies may include a support stem coupled with the electrostatic chuck body. The substrate support assemblies may include a cooling hub positioned below a base of the support stem and coupled with a cooling fluid source. The electrostatic chuck body may define at least one cooling channel that is in communication with a cooling fluid source. The substrate support assemblies may include a heater embedded within the electrostatic chuck body. The substrate support assemblies may include an AC power rod extending through the support stem and electrically coupled with the heater. The substrate support assemblies may include a plurality of voids formed within the electrostatic chuck body between the at least one cooling channel and the heater.

A holding device for holding a plurality of substrates for plasma-enhanced deposition of a layer from the gas phase on the substrates, having: inner carrier plates, arranged parallel to one another and designed to carry substrates on mutually opposite sides; outer carrier plates, arranged parallel to the inner carrier plates and having an inner side facing the inner carrier plates, and an outer side facing away from the inner carrier plates, wherein each outer carrier plate is designed to carry one or more substrates on its inner side and to be free of substrates on its outer side; and shielding plates which are each arranged at a distance from the outer side of the outer carrier plate such that, as seen in a plan view of the outer carrier plates, the shielding plates at least predominantly shield the outer carrier plates, wherein each shielding plate is free of substrates.

Provided are methods for transferring graphene from graphene-on-metal foil onto a substrate. The method does not require chemical etching to remove the metal foil and provides more a uniform graphene with improved electronic properties. The present invention also provides compositions comprising graphene, a binder, and a substrate.

Even when two processing furnaces are included, space can be saved by removing needed equipment. Included are: first and second furnaces that process a substrate; a heat exchanger that cools a refrigerant discharged from the first and second furnaces; an exhaust blower that sucks the refrigerant discharged from the heat exchanger and sends out the refrigerant to a downstream side; first and second flow paths that connect the first and second furnaces, the heat exchanger, and the exhaust blower to each other such that the refrigerant can flow therethrough; first and second dampers having variable opening degrees disposed upstream from the heat exchanger in the first and second flow paths, respectively; and a controller that controls heating and cooling of the first and second furnaces. The first and second flow paths merge together in at least a part of each of the first and second flow paths.

A method for processing a workpiece is provided. The method can include placing a workpiece on a susceptor disposed within a processing chamber. The method can include performing a multi-cycle thermal treatment process on the workpiece in the processing chamber. The multi-cycle thermal treatment process can include at least two thermal cycles. Each thermal cycle of the at least two thermal cycles can include performing a first treatment on the workpiece at a first temperature; heating a device side surface of the workpiece to a second temperature in less than one second; performing a second treatment on the workpiece at approximately the second temperature; and cooling the workpiece subsequent to performing the second treatment.