The disclosed materials, methods, and apparatus, provide novel ultra-high temperature materials (UHTM) in fibrous forms/structures; such “fibrous materials” can take various forms, such as individual filaments, short-shaped fiber, tows, ropes, wools, textiles, lattices, nano/microstructures, mesostructured materials, and sponge-like materials. At least four important classes of UHTM materials are disclosed in this invention: (1) carbon, doped-carbon and carbon alloy materials, (2) materials within the boron-carbon-nitride-X system, (3) materials within the silicon-carbon-nitride-X system, and (4) highly-refractory materials within the tantalum-hafnium-carbon-nitride-X and tantalum-hafnium-carbon-boron-nitride-X system. All of these material classes offer compounds/mixtures that melt or sublime at temperatures above 1800° C.—and in some cases are among the highest melting point materials known (exceeding 3000° C.). In many embodiments, the synthesis/fabrication is from gaseous, solid, semi-solid, liquid, critical, and supercritical precursor mixtures using one or more low molar mass precursor(s), in combination with one or more high molar mass precursor(s). Methods for controlling the growth, composition, and structures of UHTM materials through control of the thermal diffusion region are disclosed.

A detecting method and a detecting equipment therefor are provided. The detecting method includes: inspecting whether a display panel has a defective position; after acquiring the defective position of the display panel by the inspecting, using a first focused ion beam generated by a first ion overhaul apparatus to cut the defective position of the display panel, so as to strip a defect at the defective position and observe morphology of defect; using a repair apparatus to perform a repair treatment on the defective position after the defect is stripped. An inspection apparatus for the inspecting of the defective position, the first ion overhaul apparatus and the repair apparatus are sequentially installed on the same production line.

A method includes placing a wafer into a production chamber, providing a heating source to heat the wafer, and projecting a laser beam on the wafer using a laser projector. The method further includes, when the wafer is heated by both of the heating source and the laser beam, performing a process selected from an epitaxy process to grow a semiconductor layer on the wafer, and an etching process to etch the semiconductor layer.

A method of repairing an article including cleaning a repair area, wherein the repair area comprises a ceramic matrix composite; and depositing a ceramic material in the cleaned repair area using laser assisted chemical vapor deposition. Also disclosed is a repaired ceramic composite produced by this method.

The deposition apparatus includes a chamber including a deposition space, a stage that supports a substrate, a light source, a gas supply, and a heater. The light source includes an emission source that emits an energy ray and is disposed to face the deposition space. The gas supply includes a shower plate and a gas diffusion space. The shower plate includes a first surface that faces the light source, a second surface that faces the stage, and a plurality of through-holes that penetrates the first surface and the second surface, the shower plate allowing the energy ray to transmit therethrough. The gas diffusion space faces the first surface and diffuses raw material gas including an energy ray-curable resin that cures when the energy ray-curable resin is irradiated with the energy ray. The gas supply supplies the raw material gas into the deposition space from the gas diffusion space. The heater heats the first surface of the shower plate.

The invention includes apparatus and methods for instantiating and quantum printing materials, such as elemental metals, in a nanoporous carbon powder.

A method for making a monocrystalline structure is disclosed. The method includes depositing a first volume of a material on a substrate to create a first crystal seed and depositing a second volume of the material towards the substrate to nucleate with the first crystal seed to create a first initial epitaxial structure.

A method is provided for growing a fiber structure, where the method includes: obtaining a substrate, growing an array of pedestal fibers on the substrate, growing fibers on the pedestal fibers, and depositing a coating surrounding each of the fibers. In another aspect, a method of fabricating a fiber structure includes obtaining a substrate and growing a plurality of fibers on the substrate according to 1½D printing. In another aspect, a multilayer functional fiber is provided produced by, for instance, the above-noted methods.

An atomic layer deposition (ALD) apparatus includes a light source disposed at an upper portion of a section, a wafer supporting part disposed at a lower portion of the section, and a lens pocket between the light source and the wafer supporting part, and including a frame part and a transparent panel, the lens pocket including a pocket space having sides defined by the frame part and a bottom defined by the transparent panel.

The invention includes apparatus and methods for instantiating and quantum printing materials, such as elemental metals, in a nanoporous carbon powder.