The present disclosure is a wafer support, which includes a heating unit, an insulating-and-heat-conducting unit and a conduct portion, wherein the insulating-and-heat-conducting unit is positioned between the conduct portion and the heating unit. During a deposition process, an AC bias is formed on the conduct portion to attract a plasma disposed thereabove. The heating unit includes at least one heating coil, wherein the heating coil heats the wafer supported by the wafer support via the insulating-and-heat-conducting unit and the conduct portion. The insulating-and-heat-conducting unit electrically insulates the heating unit and the conduct portion to prevent the AC flowing in the heating coil and the AC bias on the conduct portion from conducting each other, so the wafer support can generate a stable AC bias and temperature to facilitate forming an evenly-distributed thin film on the wafer supported by the wafer support.

The present disclosure is a wafer support, which includes a heating unit, an insulating-and-heat-conducting unit and a conduct portion, wherein the insulating-and-heat-conducting unit is positioned between the conduct portion and the heating unit. During a deposition process, an AC bias is formed on the conduct portion to attract a plasma disposed thereabove. The heating unit includes at least one heating coil, wherein the heating coil heats the wafer supported by the wafer support via the insulating-and-heat-conducting unit and the conduct portion. The insulating-and-heat-conducting unit electrically insulates the heating unit and the conduct portion to prevent the AC flowing in the heating coil and the AC bias on the conduct portion from conducting each other, so the wafer support can generate a stable AC bias and temperature to facilitate forming an evenly-distributed thin film on the wafer supported by the wafer support.

An electric discharge generator and power supply device of electric discharge generator includes a radical gas generation apparatus, a process chamber apparatus, and an n-phase inverter power supply device. The radical gas generation apparatus is located adjacent to the process chamber apparatus. The radical gas generation apparatus includes a plurality of (n) discharge cells. The n-phase inverter power supply device includes a power supply circuit configuration offering a means to control output of n-phase alternating current voltages and variably controls, according to positions of the plurality of discharge cells, the alternating current voltages of different phases.

An electric discharge generator and power supply device of electric discharge generator includes a radical gas generation apparatus, a process chamber apparatus, and an n-phase inverter power supply device. The radical gas generation apparatus is located adjacent to the process chamber apparatus. The radical gas generation apparatus includes a plurality of (n) discharge cells. The n-phase inverter power supply device includes a power supply circuit configuration offering a means to control output of n-phase alternating current voltages and variably controls, according to positions of the plurality of discharge cells, the alternating current voltages of different phases.

A polymer substrate having deposited on its surface a reaction product of a precursor material obtained or obtainable by a method for preparation of polymer, and to the use of the polymer having improved antibacterial properties and/or antiviral properties or of the polymer having improved antibacterial properties and/or antiviral properties obtained or obtainable by the method for medical applications, antibiofouling applications, hygiene applications, food industry applications, industrial or computer related applications, consumer goods applications and appliances, public and public transport applications, underwater, water sanitation or seawater applications.

A polymer substrate having deposited on its surface a reaction product of a precursor material obtained or obtainable by a method for preparation of polymer, and to the use of the polymer having improved antibacterial properties and/or antiviral properties or of the polymer having improved antibacterial properties and/or antiviral properties obtained or obtainable by the method for medical applications, antibiofouling applications, hygiene applications, food industry applications, industrial or computer related applications, consumer goods applications and appliances, public and public transport applications, underwater, water sanitation or seawater applications.

A plasma CVD apparatus includes a plasma source connected to an alternating current power supply or two or more alternating current power supplies, configured to generate plasma; and a magnet array configured by a plurality of magnets. The plasma source has an electrode group, which is configured by arranging n electrodes (n being a positive even integer), in an order of electrode numbers. Each of the electrodes of the electrode group is connected to the alternating current power supply. An exit of a flow channel for a precursor gas is formed between adjacent electrodes of the electrode group. The magnet array is arranged so that a north pole or a south pole of each of the magnets is facing the plasma source. In the magnet array, for at least one pair of adjacent two magnets, poles facing the plasma source are arranged to be the same.

The present invention provides a gas jetting apparatus for a film formation apparatus. The gas jetting apparatus is capable of uniformly jetting, even onto a treatment-target object having a high-aspect-ratio groove, a gas into the groove. The gas jetting apparatus (100) according to the present invention includes a gas jetting cell unit (23) for rectifying a gas and jetting the rectified gas into the film formation apparatus (200). The gas jetting cell unit (23) has a fan shape internally formed with a gap (d0) serving as a gas route. A gas in a gas dispersion supply unit (99) enters from a wider-width side of the fan shape into the gap (d0), and, due to the fan shape, the gas is rectified, accelerated, and output from a narrower-width side of the fan shape into the film formation apparatus (200).

The present invention provides a gas jetting apparatus for a film formation apparatus. The gas jetting apparatus is capable of uniformly jetting, even onto a treatment-target object having a high-aspect-ratio groove, a gas into the groove. The gas jetting apparatus (100) according to the present invention includes a gas jetting cell unit (23) for rectifying a gas and jetting the rectified gas into the film formation apparatus (200). The gas jetting cell unit (23) has a fan shape internally formed with a gap (d0) serving as a gas route. A gas in a gas dispersion supply unit (99) enters from a wider-width side of the fan shape into the gap (d0), and, due to the fan shape, the gas is rectified, accelerated, and output from a narrower-width side of the fan shape into the film formation apparatus (200).

A plasma reactor includes a chamber body having an interior space that provides a plasma chamber, a gas distribution port to deliver a processing gas to the plasma chamber, a workpiece support to hold a workpiece, an antenna array comprising a plurality of monopole antennas extending partially into the plasma chamber, and an AC power source to supply a first AC power to the plurality of monopole antennas.