Patent classifications
C23C16/503
Processing method and plasma processing apparatus
A method of processing an object using a plasma processing apparatus is provided. The plasma processing apparatus includes a stage on which the object is placed in a chamber, an outer peripheral member disposed around the stage, and a first power supply configured to apply voltage to the outer peripheral member. The method includes a step of exposing the object to a plasma containing a precursor having a deposition property, while applying voltage from the first power supply to the outer peripheral member. In applying voltage to the outer peripheral member, a status of a deposition film containing carbon that is deposited on the outer peripheral member is monitored, and the voltage applied to the outer peripheral member is controlled based on the monitored status of the deposition film.
COPPER-FILLED CARBON NANOTUBES AND SYNTHESIS METHODS THEREOF
Copper-filled carbon nanotubes and methods of synthesizing the same are provided. Plasma-enhanced chemical vapor deposition can be used to synthesize vertically aligned carbon nanotubes filled with copper nanowires. The copper filling can occur concurrently with the carbon nanotube growth, and the carbon nanotubes can be completely filled by copper. The filling of Cu inside the CNTs can be controlled by tuning the synthesis temperature.
METHOD FOR COATING METAL
A metal substrate with a silicon oxide based layer having a thickness between 80 and 400 nm and having between 5 and 30 atom % of carbon. Also included is a process for depositing by PECVD a silicon oxide based layer, having a thickness comprised between 80 and 400 nm and comprising between 5 and 30 atom % of carbon, on a metal substrate.
METHOD FOR COATING METAL
A metal substrate with a silicon oxide based layer having a thickness between 80 and 400 nm and having between 5 and 30 atom % of carbon. Also included is a process for depositing by PECVD a silicon oxide based layer, having a thickness comprised between 80 and 400 nm and comprising between 5 and 30 atom % of carbon, on a metal substrate.
Apparatus for in-vivo measuring of H.SUB.2.O.SUB.2 .oxidation
An apparatus for in-vivo measuring H.sub.2O.sub.2 oxidation within a living tissue. The apparatus includes an electrochemical probe and an electrochemical stimulator-analyzer. The electrochemical probe includes a sensing part and a handle. The sensing part includes a working electrode, a counter electrode, and a reference electrode. The working electrode includes a first biocompatible conductive needle coated with a layer of vertically aligned multi-walled carbon nanotubes. The counter electrode includes a second biocompatible conductive needle. The reference electrode includes a third biocompatible conductive needle. The electrochemical stimulator-analyzer is configured to generate a set of electrical currents in a portion of the living tissue.
ARTIFICIAL BLOOD VESSEL
An artificial blood vessel 10 comprises: an artificial blood vessel body 12; and a carbon material film 11 that covers the inner wall of the artificial blood vessel body 12. The inner wall which is covered by the carbon material film 11 is configured so that the water vapor adsorption isotherm shows desorption hysteresis.
ARTIFICIAL BLOOD VESSEL
An artificial blood vessel 10 comprises: an artificial blood vessel body 12; and a carbon material film 11 that covers the inner wall of the artificial blood vessel body 12. The inner wall which is covered by the carbon material film 11 is configured so that the water vapor adsorption isotherm shows desorption hysteresis.
Monopole antenna array source with gas supply or grid filter for semiconductor process equipment
A plasma reactor includes a chamber body having an interior space that provides a plasma chamber, a gas distribution port to deliver a processing gas to the plasma chamber, a workpiece support to hold a workpiece, an antenna array comprising a plurality of monopole antennas extending partially into the plasma chamber, and an AC power source to supply a first AC power to the plurality of monopole antennas. The plurality of monopole antennas can extend through a first gas distribution plate. A grid filter can be positioned between the workpiece support and the plurality of monopole antennas.
Monopole antenna array source with gas supply or grid filter for semiconductor process equipment
A plasma reactor includes a chamber body having an interior space that provides a plasma chamber, a gas distribution port to deliver a processing gas to the plasma chamber, a workpiece support to hold a workpiece, an antenna array comprising a plurality of monopole antennas extending partially into the plasma chamber, and an AC power source to supply a first AC power to the plurality of monopole antennas. The plurality of monopole antennas can extend through a first gas distribution plate. A grid filter can be positioned between the workpiece support and the plurality of monopole antennas.
Substrate processing apparatus, material layer deposition apparatus, and atmospheric pressure chemical vapor deposition apparatus
A substrate processing apparatus includes a reaction chamber including an inlet through which a reaction gas is supplied and an outlet through which residue gas is exhausted; a plurality of ionizers located at a front end of the inlet and configured to ionize the reaction gas supplied through the inlet; and a heater configured to heat the reaction chamber. The plurality of ionizers include a first ionizer configured to ionize the reaction gas positively; and a second ionizer configured to ionize the reaction gas negatively.