A substrate processing apparatus includes a reaction chamber including an inlet through which a reaction gas is supplied and an outlet through which residue gas is exhausted; a plurality of ionizers located at a front end of the inlet and configured to ionize the reaction gas supplied through the inlet; and a heater configured to heat the reaction chamber. The plurality of ionizers include a first ionizer configured to ionize the reaction gas positively; and a second ionizer configured to ionize the reaction gas negatively.

A method of forming a carbon hard mask includes generating a radio frequency plasma including carbon-based ions by supplying continuous wave radio frequency power to a plasma processing chamber. The carbon-based ions have a first average ion energy. The method further includes adjusting the first average ion energy of the carbon-based ions to a second average ion energy by supplying continuous wave direct current power to the plasma processing chamber concurrently with the continuous wave radio frequency power and forming a carbon hard mask at a substrate within the plasma processing chamber by delivering the carbon-based ions having the second average ion energy to the substrate.

A post-discharge plasma coating device for a wired substrate comprising an inner tubular electrode on an inner tubular wall for receiving the substrate and a precursor moving axially in a working direction; an outer tubular electrode coaxial with, and surrounding, the inner tubular electrode. The inner and outer electrodes are configured to be supplied with an electrical power source for producing a plasma when a plasma gas is supplied between the electrodes and is thereby excited, the plasma excited gas flowing axially in the working direction and reacting with the precursor in a coating area at the end of the inner tubular wall in the direction. The inner tubular wall extends axially towards the coating area at least until, in various instances beyond, the end of the outer electrode, in the working direction and at least one dielectric tubular wall extends axially between the inner tubular electrode and the outer tubular electrode.

A post-discharge plasma coating device for a wired substrate comprising an inner tubular electrode on an inner tubular wall for receiving the substrate and a precursor moving axially in a working direction; an outer tubular electrode coaxial with, and surrounding, the inner tubular electrode. The inner and outer electrodes are configured to be supplied with an electrical power source for producing a plasma when a plasma gas is supplied between the electrodes and is thereby excited, the plasma excited gas flowing axially in the working direction and reacting with the precursor in a coating area at the end of the inner tubular wall in the direction. The inner tubular wall extends axially towards the coating area at least until, in various instances beyond, the end of the outer electrode, in the working direction and at least one dielectric tubular wall extends axially between the inner tubular electrode and the outer tubular electrode.

An electrode filament connection member configured to be attached so as to pass through an outer wall of a chemical vapor deposition apparatus in which an electrode filament is disposed in a chamber is provided, and to form an electrical connection between a wire from a power source and the electrode filament. The electrode filament connection member includes a head portion attached to the electrode filament, and a rod portion that extends through the outer wall and is connected to the wire. The head portion includes an electrode filament attachment portion at a tip end portion, and a side surface that is parallel to an axial direction or is gradually widened from the tip end portion toward the outer wall. An outer shape of the side surface of the head portion conforms to an outer shape of the electrode filament connection member when viewed in projection along the axial direction.

An apparatus for in-vivo measuring H.sub.2O.sub.2 oxidation within a living tissue. The apparatus includes an electrochemical probe and an electrochemical stimulator-analyzer. The electrochemical probe includes a sensing part and a handle. The sensing part includes a working electrode, a counter electrode, and a reference electrode. The working electrode includes a first biocompatible conductive needle coated with a layer of vertically aligned multi-walled carbon nanotubes. The counter electrode includes a second biocompatible conductive needle. The reference electrode includes a third biocompatible conductive needle. The electrochemical stimulator-analyzer is configured to generate a set of electrical currents in a portion of the living tissue.

There is provided a plasma processing device. The plasma processing device comprises: a chamber accommodating a stage on which a substrate is placed; an antenna disposed outside the chamber; a dielectric window disposed between the chamber and the antenna; a gas supply unit configured to supply a process gas into the chamber; a power supply unit configured to supply high-frequency power to the antenna to supply high-frequency waves into the chamber through the dielectric window and generate plasma from the process gas in the chamber; an electron generation unit configured to generate electrons in the chamber by excitation of the process gas supplied into the chamber; and a control device configured to control the power supply unit so as to supply the high-frequency power to the antenna simultaneously with the start of the excitation of the process gas by the electron generation unit or after the excitation of the process gas by the electron generation unit is started.

A film formation method is provided with a step for disposing a non-electroconductive long thin tube 102 in a chamber 101 in which the internal pressure thereof is adjustable, generating a plasma inside the long thin tube 102 in a state in which a starting material gas including a hydrocarbon is supplied, and forming a diamond-like carbon film on an inner wall surface of the long thin tube 102. The long thin tube 102 is disposed in the chamber 101 in a state in which a discharge electrode 125 is disposed in one end part of the long thin tube 102 and the other end part is open. An alternating-current bias is intermittently applied between the discharge electrode 125 and a counter electrode 126 provided so as to be separated from the long thin tube 102.

According to various embodiments, a wafer chuck may include at least one support region configured to support a wafer in a receiving area; a central cavity surrounded by the at least one support region configured to support the wafer only along an outer perimeter; and a boundary structure surrounding the receiving area configured to retain the wafer in the receiving area.

According to various embodiments, a wafer chuck may include at least one support region configured to support a wafer in a receiving area; a central cavity surrounded by the at least one support region configured to support the wafer only along an outer perimeter; and a boundary structure surrounding the receiving area configured to retain the wafer in the receiving area.