A hard coating for a substrate or portion of a razor blade wherein a main layer of the hard coating includes graphene and/or any combination of derivatives thereof. The graphene may be deposited on the substrate or portion of the razor blade using plasma assisted chemical vapor deposition (PECVD) or similar process.

A method of forming a silicon nitride film on a substrate having a recess pattern formed in a surface thereof, includes: forming the silicon nitride film in conformity to the surface of the substrate by supplying each of a raw material gas containing silicon and a nitriding gas for nitriding the raw material gas into a processing container in which the substrate is accommodated; shrinking the silicon nitride film such that a thickness thereof is reduced from a bottom side toward an upper side of the recess pattern by supplying a plasmarized shaping gas for shaping the silicon nitride film to the substrate in a state where the supply of the raw material gas containing silicon into the processing container is stopped; and burying the silicon nitride film in the recess pattern by alternately and repeatedly performing the forming the silicon nitride film and the shrinking the silicon nitride film.

A CNT production apparatus 1 provided by the present invention includes a cylindrical chamber 10 and a control valve 60 provided to a gas discharge pipe 50. The chamber 10 includes a reaction zone provided in a partial range of the chamber 10 in the direction of the cylinder axis, a deposition zone 22 which is provided downstream of the reaction zone 20, and a deposition state detector 40 that detects a physical property value indicating a deposition state of carbon nanotubes in the deposition zone 22. The apparatus is configured to close the control valve 60 and deposit carbon nanotubes in the deposition zone 22 when the physical property value detected by the deposition state detector 40 is equal to or less than a predetermined threshold value, and configured to open the control valve 60 and recover the carbon nanotubes deposited in the deposition zone 22 when the physical property value exceeds the predetermined threshold value.

The invention relates to a plasma chemical vapor deposition (PCVD) apparatus for deposition of one or more layers of silica onto an interior wall of an elongated hollow glass substrate tube. The apparatus comprises a microwave generator, a plasma generator receiving microwaves from said generator in use, a cylindrical cavity extending through said generator, and a cylindrical liner positioned in the cavity. The substrate tube passes through the liner in use. The cylindrical liner has at least one section having a reduced inner diameter over a part of the length of the liner, the at least one section providing a contact zone for the substrate tube. The microwave generator is configured to generate microwaves having a wavelength Lw in the range of 40 to 400 millimeters, wherein a length of said at least one section having the reduced inner diameter is at most 0.1×Lw.

The invention relates to a plasma chemical vapor deposition (PCVD) apparatus for deposition of one or more layers of silica onto an interior wall of an elongated hollow glass substrate tube. The apparatus comprises a microwave generator, a plasma generator receiving microwaves from said generator in use, a cylindrical cavity extending through said generator, and a cylindrical liner positioned in the cavity. The substrate tube passes through the liner in use. The cylindrical liner has at least one section having a reduced inner diameter over a part of the length of the liner, the at least one section providing a contact zone for the substrate tube. The microwave generator is configured to generate microwaves having a wavelength Lw in the range of 40 to 400 millimeters, wherein a length of said at least one section having the reduced inner diameter is at most 0.1×Lw.

A plasma processing apparatus includes a microwave introducing module provided at a ceiling portion of a processing chamber and configured to introduce a microwave for generating plasma of a gas into the processing chamber; and a plurality of gas supply holes formed at the ceiling portion of the processing chamber and configured to introduce the gas into a plasma processing space. Each of the plurality of gas supply holes includes a fine hole and a cavity that is expanded from the fine hole and opened to the plasma processing space. A diameter of the cavity on the plasma processing space side is 3 mm or more and is ⅛ or less of a wavelength of a surface wave of a microwave in the plasma.

A plasma processing apparatus includes a microwave introducing module provided at a ceiling portion of a processing chamber and configured to introduce a microwave for generating plasma of a gas into the processing chamber; and a plurality of gas supply holes formed at the ceiling portion of the processing chamber and configured to introduce the gas into a plasma processing space. Each of the plurality of gas supply holes includes a fine hole and a cavity that is expanded from the fine hole and opened to the plasma processing space. A diameter of the cavity on the plasma processing space side is 3 mm or more and is ⅛ or less of a wavelength of a surface wave of a microwave in the plasma.

A film forming method includes: rotating a rotary table to revolve a substrate which is placed on the rotary table and has a recess in its surface; supplying a raw material gas to a first region on the rotary table; supplying an ammonia gas to a second region on the rotary table; forming a first SiN film in the recess by supplying the raw material gas to the first region and supplying the ammonia gas to the second region at a first flow rate, while the rotary table rotates at a first rotation speed; and forming a second SiN film in the recess such that the second SiN film is laminated on the first SiN film by supplying the raw material gas to the first region and supplying the ammonia gas to the second region at a second flow rate, while the rotary table rotates at a second rotation speed.

A diamond and a preparation method and use. The method for preparing diamond comprises: processing a substrate material of a substrate holder to obtain a surface that is easily separated from diamond films using a plasma chemical vapor deposition method to form a diamond film layer on the surface of the substrate holder, wherein the plasma chemical vapor deposition uses a multi-energy sources coupled plasma; post-processing the diamond film layer to remove impurity material on the diamond surface and a nucleation layer and/or stress layer with inconsistent properties of a main body of the diamond film. The method has the advantages of controllable thickness, controllable quality, controllable cost, etc., and lays the foundation for diamond in the fields of cutting tools and heat sinks.

A diamond and a preparation method and use. The method for preparing diamond comprises: processing a substrate material of a substrate holder to obtain a surface that is easily separated from diamond films using a plasma chemical vapor deposition method to form a diamond film layer on the surface of the substrate holder, wherein the plasma chemical vapor deposition uses a multi-energy sources coupled plasma; post-processing the diamond film layer to remove impurity material on the diamond surface and a nucleation layer and/or stress layer with inconsistent properties of a main body of the diamond film. The method has the advantages of controllable thickness, controllable quality, controllable cost, etc., and lays the foundation for diamond in the fields of cutting tools and heat sinks.