Exemplary semiconductor processing methods may include providing a boron-containing precursor and a nitrogen-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma of the boron-containing precursor and the nitrogen-containing precursor in the processing region. A temperature of the substrate may be maintained at less than or about 500° C. The methods may include forming a layer of material on the substrate. The layer of material may include hexagonal boron nitride. The methods include subsequent forming the layer of material on the substrate for a first period of time, halting delivery of the boron-containing precursor. The methods may include maintaining a flow of the nitrogen-containing precursor for a second period of time, and increasing a plasma power while maintaining the flow of the nitrogen-containing precursor.

Exemplary semiconductor processing methods may include providing a boron-containing precursor and a nitrogen-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma of the boron-containing precursor and the nitrogen-containing precursor in the processing region. A temperature of the substrate may be maintained at less than or about 500° C. The methods may include forming a layer of material on the substrate. The layer of material may include hexagonal boron nitride. The methods include subsequent forming the layer of material on the substrate for a first period of time, halting delivery of the boron-containing precursor. The methods may include maintaining a flow of the nitrogen-containing precursor for a second period of time, and increasing a plasma power while maintaining the flow of the nitrogen-containing precursor.

The present invention resides in the unifying idea of synchronizing a positive voltage pulse supplied to an electrically conductive or ferromagnetic tube and a exciting negative voltage pulse on a hollow cathode induced on the background of a high-frequency capacitive discharge. In one embodiment, the invention relates to a method of generating low-temperature plasma in a vacuum chamber comprising a hollow cathode and an electrode, the method comprising the step of igniting the pulsed DC discharge in the hollow cathode wherein the positive voltage pulse at least partially overlaps with the negative voltage pulse, and the positive voltage pulse at least partially overlaps with the negative voltage pulse on the hollow cathode. In another embodiment, the present invention relates to a method of coating the inner walls of hollow tubes which utilizes the above-mentioned low-temperature plasma generation process. In another embodiment, the invention relates to a low-temperature plasma generating device comprising a hollow cathode located in the vacuum chamber, a RF plasma source, a pulse DC burst source, and a bipolar pulse source. In another embodiment, an object of the invention is an apparatus adapted to coat the inner sides of hollow tubes comprising a low-temperature plasma generating device.

Embodiments of the present disclosure provide a film and a forming method thereof. The forming method includes: providing a base; forming a diamond-like carbon film on the base, where the DLC film has carbon-hydrogen chemical bonds; and performing photocatalytic treatment on the DLC film, to break at least some of the carbon-hydrogen chemical bonds and reduce content of hydrogen elements in the DLC film.

Embodiments of the present disclosure provide a film and a forming method thereof. The forming method includes: providing a base; forming a diamond-like carbon film on the base, where the DLC film has carbon-hydrogen chemical bonds; and performing photocatalytic treatment on the DLC film, to break at least some of the carbon-hydrogen chemical bonds and reduce content of hydrogen elements in the DLC film.

Processing methods for forming iridium-containing films at low temperatures are described. The methods comprise exposing a substrate to iridium hexafluoride and a reactant to form iridium metal or iridium silicide films. Methods for enhancing selectivity and tuning the silicon content of some films are also described.

Processing methods for forming iridium-containing films at low temperatures are described. The methods comprise exposing a substrate to iridium hexafluoride and a reactant to form iridium metal or iridium silicide films. Methods for enhancing selectivity and tuning the silicon content of some films are also described.

A method may include providing a set of features in a mask layer, wherein a given feature comprises a first dimension along a first direction, second dimension along a second direction, orthogonal to the first direction, and directing an angled ion beam to a first side region of the set of features in a first exposure, wherein the first side region is etched a first amount along the first direction. The method may include directing an angled deposition beam to a second side region of the set of features in a second exposure, wherein a protective layer is formed on the second side region, the second side region being oriented perpendicularly with respect to the first side region. The method may include directing the angled ion beam to the first side region in a third exposure, wherein the first side region is etched a second amount along the first direction.

Disclosed is a method for making a lithium-ion cell by depositing from an atmospheric plasma deposition device inorganic oxide particles produced from a precursor in an atmospheric plasma as a coating on a surface of a lithium-ion electrochemical cell component. The coating formed by the inorganic oxide particles may be an insulating coating or may provide dimensional stability during a thermal runaway.

Disclosed is a method for making a lithium-ion cell by depositing from an atmospheric plasma deposition device inorganic oxide particles produced from a precursor in an atmospheric plasma as a coating on a surface of a lithium-ion electrochemical cell component. The coating formed by the inorganic oxide particles may be an insulating coating or may provide dimensional stability during a thermal runaway.