C23C16/545

Drum for roll-to-roll deposition, roll-to-roll deposition apparatus and film roll

Disclosed herein is a drum for roll-to-roll deposition to rotate about a longitudinal axis. The drum is circular in a widthwise cross-section and has a shape in which opposite longitudinal edge portions each have a narrower width than a longitudinal central portion. By using the drum for roll-to-roll deposition according to embodiments of the present disclosure, it is possible to remove wrinkles occurring on a flexible substrate when a roll-to-roll deposition process is performed. As a result, it is possible to manufacture a film roll having a deposition layer with excellent widthwise thickness uniformity.

Systems and methods for high yield and high throughput production of graphene

Systems and method for producing graphene on a substrate are described. Certain types of exemplar systems include lateral arrangements of a substrate gas scavenging environment and an annealing environment. Certain other types of exemplar systems include lateral arrangements of a graphene producing environment and a cooling environment, which cools the graphene produced on the substrate. Yet other types of exemplar systems include lateral arrangements of a localized annealing environment, localized graphene producing environment and a localized cooling environment inside the same enclosure. Certain type of exemplar methods for producing graphene on a substrate include scavenging a first portion of the substrate and preferably, contemporaneously annealing a second portion of the substrate. Certain other type of exemplar methods for producing graphene include novel annealing techniques and/or implementing temperature profiles and gas flow rate profiles that vary as a function of lateral distance and/or cooling graphene after producing it.

METHOD FOR DEPOSITING A COATING ON A YARN IN A MICROWAVE FIELD

A method for treating a carbon or ceramic yarn includes forming a coating on the yarn in a reaction zone of a reactor by heating a segment of the yarn in the presence of a gas phase in a microwave field, wherein the gas phase includes a mixture of a diluent gas and a coating precursor in the vapor state, and wherein the gas phase is formed at least by introducing the diluent gas into the reactor and mixing the introduced diluent gas with the coating precursor in the reactor before the reaction zone.

GROUND RETURN FOR THIN FILM FORMATION USING PLASMA
20230243035 · 2023-08-03 ·

A process kit is provided. The process kit includes: a substrate support; and one or more electrical connectors, each electrical connector attached to the substrate support, each electrical connector including: a tube; a shaft including a rim, the rim positioned inside the tube, the shaft including a first portion above the rim and a second portion below the rim, wherein at least part of the first portion is configured to move outside of the tube, and the second portion is inside the tube; and a seal, wherein the rim directly underlies at least a portion of the seal.

CONTINUOUS MULTIPLE TOW COATING REACTOR
20230304157 · 2023-09-28 ·

A method for coating a fiber tow includes moving a fiber tow across a wedge to separate the fiber tow into a plurality of sub-tows, and coating the plurality of sub-tows.

ROLL TO ROLL ATOMIC LAYER DEPOSITION APPARATUS
20230304153 · 2023-09-28 ·

Proposed is a roll to roll atomic layer deposition method, which deposits an atomic layer on a porous material, the roll to roll atomic layer deposition method including: moving, by a pair of winding rollers, reciprocatingly the porous material in a longitudinal direction; supplying, by one or more source substance suppliers, a source substance to the porous material while the porous material is moving reciprocatingly in the longitudinal direction; and sucking, by one or more pumps, the source substance supplied from the one or more source substance suppliers.

System and method for depositing of a first and second layer on a substrate

System and method for depositing a first layer on a flexible strip-shaped or sheet-shaped substrate and a second layer on the first layer. The system comprises a first deposition unit of a first type which is provided with a first supporting body, a conveying device for conveying the substrate in a conveying direction which extends parallel to a first central line of the first supporting body along the radial outer side of the supporting body. Downstream of the first deposition unit, the system furthermore comprises a second deposition unit which is provided with a second supporting body with a second central line which is in line with the first central line, and a wrapping device for keeping the substrate in a wrapped state, the substrate being wrapped around at least a part of the radial outer sides of the first supporting body and of the second supporting body.

Holding arrangement for holding a substrate, carrier including the holding arrangement, processing system employing the carrier, and method for releasing a substrate from a holding arrangement
11186906 · 2021-11-30 · ·

A holding arrangement for holding a substrate is described. The holding arrangement includes a body having a first wall of flexible material; an adhesive arrangement configured for attaching the substrate, wherein the adhesive arrangement is provided on a first side of the first wall, and a force transmission arrangement configured for applying a force to a second side of the first wall opposing the first side of the first wall.

PROCESS CHAMBER GUIDE, PROCESS CHAMBER, AND METHOD FOR GUIDING A SUBSTRATE CARRIER IN A PROCESS POSITION
20210363632 · 2021-11-25 · ·

A process chamber guide, designed for linearly guiding a substrate carrier that can be displaced in the process chamber guide in a direction of guidance such that by displacement of the substrate carrier in a process position, an at least regional demarcation of a process chamber guide can be formed by the process chamber guide and substrate carrier. The invention is characterized in that the process chamber guide has a roller bearing for the substrate support and at least one sealing surface, which extends parallel to the direction of guidance and is designed and arranged in such a way that, whenever the substrate carrier arranged in the process chamber guide is in a process position, the sealing surface is spaced apart less than 1 mm from the substrate carrier. The invention further relates to a process chamber and to a method for guiding a substrate carrier in a processing position.

METHOD FOR COATING METAL
20220018021 · 2022-01-20 · ·

A metal substrate with a silicon oxide based layer having a thickness between 80 and 400 nm and having between 5 and 30 atom % of carbon. Also included is a process for depositing by PECVD a silicon oxide based layer, having a thickness comprised between 80 and 400 nm and comprising between 5 and 30 atom % of carbon, on a metal substrate.