Discussed is a chemical vapor deposition apparatus that includes a reaction chamber with an open top and an open bottom, at least one inner partition wall can be in the reaction chamber and can divide an inner space of the reaction chamber in a height direction to form a plurality of division chambers. A heater can be further disposed at an outer surface of the reaction chamber, a plurality of upper winding rolls can be disposed above the reaction chamber, and at least one roller can be disposed below the reaction chamber.

A method for synthesizing a diamond by chemical vapor deposition, the method may include heating at least one internal space of at least one hot filament unit; wherein the at least one hot filament unit is positioned in a vacuum chamber; wherein a volume of each internal space out of the at least one internal space is smaller than one half of a volume of the vacuum chamber; feeding at least one gas to the at least one internal space; wherein the at least one gas comprises at least a carbon carrier gas; breaking the at least one gas by the at least one hot filament unit, to provide at least one radical; and depositing the at least one radical on an area of a substrate to provide the diamond.

The present invention relates to sensor arrays that are more accurate, more sensitive, and more specific with respect to the material that is detected and capable of detecting one or more materials over a wide range. Such sensor arrays can comprises sensors comprising pattern illumination-based annealed coated substrate and one or more functional molecules and process of using same. The method of designing and process of making the sensors for such sensor array yields components that can have one or more electronic and/or optical functionalities that are integrated on the same substrate or film and to which one or more functional molecules can be attached to yield a sensor. Such processes when coupled with the design methods provided herein, allow for the rapid, efficient device prototyping, design change and evolution in the lab and on the production side.

A method for depositing a large-area graphene layer and an apparatus for continuous graphene deposition using the same are disclosed. The method can include forming a titanium (Ti) layer on a substrate by sputtering, reducing the titanium layer by spraying a reductant gas containing a hydrogen gas (H.sub.2) and a purge gas onto the titanium layer while moving in a first direction in relation to the substrate and exhausting the reductant gas and the purge gas. The method can also include forming graphene by spraying a reactant gas containing a graphene source and the purge gas onto the titanium layer while moving in a second direction opposite the first direction in relation to the substrate and exhausting the reactant gas and the purge gas.

Disclosed is apparatus for atomic layer deposition including a frame, an injector head with longitudinal slots supplying gases to deposition spaces confined by the longitudinal slots and a substrate. The slots are transverse to a movement in a first direction of the substrate, a subframe suspending the injector head; a movable carrier supporting the substrate for movement in the first direction; and gas pads at the subframe outside the injector head between the subframe and the moveable carrier, bearing the subframe on the carrier for the movement in the first direction. Actuators suspend the injector head from the subframe, and a control device connected to the actuators controls the actuators to adjust a working distance between a reference plane of the injector head and the surface of the substrate corresponding to a predetermined distance and to adjust an orientation of the injector head corresponding to an orientation of the substrate.

A nozzle head, apparatus and method for providing a coating on a surface of a substrate by subjecting the surface of the substrate to successive surface reactions of at least two precursors according to principles of atomic layer deposition. The nozzle head comprises an output face provided with at least two different precursor zones, the at least two different precursor zones being arranged to provide different coating layers on the surface of the substrate.

A reactor furnace for coating fiber tow includes an elongate reactor having a fiber tow inlet and a fiber tow outlet; a thermo-chemical reactor section positioned along the elongate reactor; a first microwave source for directing microwave energy along the reactor from a first end of the reactor toward a second end of the reactor; a second microwave source for directing microwave energy along the reactor from the second end of the reactor toward the first end of the reactor; a gas inlet upstream of the thermo-chemical reactor; and a gas outlet downstream of the thermo-chemical reactor.

Systems and method for producing graphene on a substrate are described. Certain types of exemplar systems include lateral arrangements of a substrate gas scavenging environment and an annealing environment. Certain other types of exemplar systems include lateral arrangements of a graphene producing environment and a cooling environment, which cools the graphene produced on the substrate. Yet other types of exemplar systems include lateral arrangements of a localized annealing environment, localized graphene producing environment and a localized cooling environment inside the same enclosure.

Certain type of exemplar methods for producing graphene on a substrate include scavenging a first portion of the substrate and preferably, contemporaneously annealing a second portion of the substrate. Certain other type of exemplar methods for producing graphene include novel annealing techniques and/or implementing temperature profiles and gas flow rate profiles that vary as a function of lateral distance and/or cooling graphene after producing it.

A method for forming a film on a substrate by continuous vapor deposition includes: introducing the substrate into a film-forming apparatus; conveying the substrate into a pretreatment compartment of a pressure reduction chamber of the film-forming apparatus; performing plasma pretreatment of the substrate including supplying a plasma source gas composed of argon and at least one of oxygen, nitrogen, carbon dioxide gas and ethylene, introducing the plasma source gas that has been supplied as plasma into a gap between a magnet of the pretreatment compartment and a pretreatment roller such that the plasma is entrapped in the gap, and holding the plasma and applying a voltage between the pretreatment roller and a plasma-supply nozzle; conveying the substrate into a vapor deposition compartment of the pressure reduction chamber; and forming the film by vapor deposition on a surface of the substrate which has been pretreated.

Disclosed is an ALD device in which a shower head is disposed at a position opposed to a film formation surface of a target workpiece in a chamber and has raw material gas ejection ports and OH* forming gas ejection ports alternately arranged at predetermined intervals in two film-formation-surface directions so as to face the film formation surface. The OH* forming gas ejection ports respectively include first ejection ports for ozone gas ejection and second ejection ports for unsaturated hydrocarbon gas ejection. An oxide film is formed on the film formation surface by ejecting a raw material gas from the raw material gas ejection ports and ejecting an ozone gas and an unsaturated hydrocarbon gas from the first and second ejection ports of the OH* forming gas ejection ports, respectively, while moving the target workpiece along the two film-formation-surface directions.