A method of forming a kilometer(s)-length high temperature superconductor tape by feeding a textured tape from roll-to-roll through a reactor chamber, flowing high temperature superconductor precursors from an elongated precursor showerhead positioned in the chamber the elongation in a direction along the tape; flowing gas from first and second elongated gas curtain shower heads on either side of the precursor showerhead; and illuminating the upper surface of the tape with illumination from sources on opposing sides of the reactor, the illumination sources positioned so as to allow illumination to pass under a respective one of the curtain shower heads and under the precursor showerhead to the upper surface of the tape.

Disclosed is an ALD device in which a shower head is disposed at a position opposed to a film formation surface of a target workpiece in a chamber and has raw material gas ejection ports and OH* forming gas ejection ports alternately arranged at predetermined intervals in two film-formation-surface directions so as to face the film formation surface. The OH* forming gas ejection ports respectively include first ejection ports for ozone gas ejection and second ejection ports for unsaturated hydrocarbon gas ejection. An oxide film is formed on the film formation surface by ejecting a raw material gas from the raw material gas ejection ports and ejecting an ozone gas and an unsaturated hydrocarbon gas from the first and second ejection ports of the OH* forming gas ejection ports, respectively, while moving the target workpiece along the two film-formation-surface directions.

A graphene synthesis chamber includes: a chamber case in which a substrate including a metal thin film is placed; a gas supply unit which supplies at least one gas comprising a carbon gas into an inner space of the chamber case; a main heating unit which emits at least one light to the inner space to heat the substrate; and at least one auxiliary heating unit which absorbs the at least one light and emits radiant heat toward the substrate.

A thin film deposition system includes a web guide system having a plurality of web guides defining a web transport path for the web of substrate. The web guide system includes a moveable portion including first and second moveable-position web guides. A web transport control system advances the web of substrate along the web transport path at a web advance velocity. A deposition head is located along the web transport path between the first and second moveable-position web guides. A motion actuator system synchronously moves a position of the first and second moveable-position web guides such that they move forward and backward according to a defined oscillating motion pattern while maintaining a constant distance between the first and second moveable-position web guides, thereby causing a portion of the web of media adjacent to the deposition head to move forward and backward in an in-track direction.

A continuous method for manufacturing graphene films using a metal substrate, wherein a first surface of the metal substrate is heated such that a top layer of the first surface melts to form a molten metal layer, and devices for carrying out the same.

An atomic layer deposition apparatus includes a first base plate on which a seat portion is defined to allow a substrate to be seated thereon, a second base plate disposed opposite to the first base plate, a first gas nozzle portion arranged on the second base plate, a second gas nozzle portion arranged on the second base plate to be spaced apart from the first gas nozzle portion and substantially parallel to the first gas nozzle portion, and a gas storage portion connected to the first gas nozzle portion and the second gas nozzle portion.

A deposition nozzle is provided that includes offset deposition apertures disposed between exhaust apertures on either side of the deposition apertures. The provided nozzle arrangements allow for deposition of material with a deposition profile suitable for use in devices such as OLEDs.

A continuous method for preparing a metal substrate having a graphene-comprising coating, the method including providing a metal substrate, continuously advancing the metal substrate into and through a processing chamber, the processing chamber having one or more heating elements, providing electromagnetic radiation to the metal substrate via the one or more heating elements to heat the metal substrate, wherein heating the metal substrates forms a molten metal layer on a top surface of the metal substrate, contacting the molten metal layer with a carbon source gas to form a graphene-comprising coating substantially covering the molten metal layer of the top surface of the metal substrate, solidifying the molten metal layer, and advancing the metal substrate having the graphene-comprising coating out of the processing chamber.

An atomic layer deposition apparatus for forming an atomic layer on a flexible substrate, the apparatus including an unwinding chamber having an unwinding roll for unwinding the flexible substrate, a winding chamber having a winding roll for winding the flexible substrate on which the atomic layer is formed, a plurality of reaction chambers provided between the unwinding chamber and the winding chamber so that the flexible substrate can pass therethrough, a first supply part for storing a gas containing a first precursor, a first supply pipe connected to the first supply part, a second supply part for storing a purge gas, a second supply pipe connected to the second supply part, a third supply part for storing a gas containing a second precursor, a third supply pipe connected to the third supply part, and an exhaust pipe connected to the plurality of reaction chambers.

It is an object to provide a functional film which does not require formation of a protective layer by laminating and applying a protective film, and sticking of the protective layer, and also has high moist heat resistance; and a method for producing the same. The object is accomplished by a configuration where the functional film includes a support, an inorganic layer, and a protective layer consisting of a resin film, in which the inorganic layer and the protective layer are directly joined to each other, and in a case where an intensity ratio obtained by dividing an intensity of a maximum peak B in a range of 2,900 to 3,000 cm.sup.−1 by an intensity of a maximum peak A in a range of 2,800 to 2,900 cm.sup.−1 in an infrared absorption spectrum is defined as B/A, the intensity ratio B/A in a surface of the protective layer on the inorganic layer side is 1.04 times or more the intensity ratio B/A in a surface of the protective layer on the opposite side.