Provided is a high-efficiency vanadium nitride/molybdenum carbide heterojunction hydrogen production electrocatalyst, and a preparation method and application thereof. The electrocatalyst has a heterojunction structure formed by coupling VN and Mo.sub.2C, wherein the mass ratio of VN and Mo.sub.2C is 20:1 to 50:1. The electrocatalyst couples nano-VN and Mo.sub.2C to form a VN/Mo.sub.2C heterojunction, so that the active center is increased, and the balance of the reaction kinetics of H.sup.+ adsorption and H.sub.2 desorption is facilitated, thereby greatly improving the activity of the electrocatalyst.

A Si-containing film forming composition comprising a catalyst and/or a polysilane and a N—H free, C-free, and Si-rich perhydropolysilazane having a molecular weight ranging from approximately 332 dalton to approximately 100,000 dalton and comprising N—H free repeating units having the formula [—N(SiH3)x(SiH2-)y], wherein x=0, 1, or 2 and y=0, 1, or 2 with x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 with x+y=3. Also disclosed are synthesis methods and applications for using the same.

An insulation film composition for a grain-oriented electrical steel sheet according to an exemplary embodiment of the present invention includes 10-50 parts by weight of metal silicate or organic silicate, 20-70 parts by weight of inorganic nanoparticles and 0.1-20 parts by weight of cobalt hydroxide. The insulation film composition can further include 10-50 parts by weight of metal phosphate, and/or 5-30 parts by weight of inorganic nanoparticles having a particle diameter of 1 nm to less than 10 nm, and/or inorganic nanoparticles having a particle diameter of 10 to 100 nm and/or 0.1-20 parts by weight of chromium oxide.

There is provided a method of producing a photovoltaic device comprising a photoactive region comprising a layer of perovskite material, wherein the layer of perovskite material is disposed on a surface that has a roughness average (R.sub.a) or root mean square roughness (R.sub.rms) of greater than or equal to 50 nm. The method comprises using vapour deposition to deposit a substantially continuous and conformal solid layer comprising one or more initial precursor compounds of the perovskite material, and subsequently treating the solid layer with one or more further precursor compounds to form a substantially continuous and conformal solid layer of the perovskite material on the rough surface. There is also provided a photovoltaic device comprising a photoactive region comprising a layer of perovskite material disposed using the method.

A method of making a carbon nanotube composite hydrogen evolution catalytic film is provided. The method includes: providing a carbon nanotube film, wherein the carbon nanotube film defines a plurality of spaced holes; providing a precursor solution containing a molybdenum source and a carbon source, and placing the precursor solution on the carbon nanotube film and drying to obtain a precursor film; and energizing the precursor film.

A device for depositing a thick metal nitride on a sample by supercritical fluids includes a first enclosure forming a first closed volume; a second enclosure placed in the first enclosure and delimited by internal walls transparent to electromagnetic radiation forming a second closed volume intended to include fluid under supercritical conditions; a heat transfer dielectric fluid circulating in the first volume around the second enclosure; a sample holder present in the second volume; an induction heating device surrounding the second enclosure; inlets for introducing a fluid and at least one precursor material into the second enclosure, and an outlet to purge the second volume.

A display panel and a fabricating method thereof are provided. The fabricating method of the display panel has steps of: providing a substrate; forming a light conversion layer on the substrate, wherein material of the light conversion layer has a perovskite structural material with a chemical formula of ABX.sub.3, wherein A represents an inorganic element, B represents an inorganic element, and X represents a halogen; performing a patterning step on the light conversion layer by an antisolvent method, wherein the light conversion layer forms a plurality of light conversion patterns; and forming a pixel layer on the light conversion layer, wherein the pixel layer has a plurality of pixel units, and the plurality of pixel units are respectively aligned with the plurality of light conversion patterns. The fabricating method can reduce a dark state brightness of the display panel, thereby improving contrast of the display panel.

A biocompatible Mg—P coating on the surface of a zinc-based biomedical material, and a preparation method and use thereof are disclosed. In the method, zinc and a zinc alloy are first subjected to surface pretreatment and then soaked in a phosphate solution at a constant temperature to form the Mg—P coating through chemical liquid deposition (CLD). The control on the composition, thickness and surface morphology of the coating is realized by using the CLD method. The biocompatible Mg—P coating has a thickness of 0.5 μm to 50 μm, is dense and uniform, and comprises a main component of zinc-magnesium-phosphate and a small amount of zinc phosphate.

The present invention relates to a photoelectric film and a fabrication method thereof, and in particular, to a layered polycrystalline lead selenide (PbSe) film and a fabrication method thereof. The fabrication method mainly includes: (1) fabricating a dense PbSe layer on a substrate through chemical bath deposition (CBD); (2) fabricating a loose plumbonacrite (Pb.sub.10O(OH).sub.6(CO.sub.3).sub.6) layer on the dense PbSe layer through CBD; (3) placing a sample with the dense PbSe layer and the Pb.sub.10O(OH).sub.6(CO.sub.3).sub.6 layer in a selenium ion-containing solution to allow an ion exchange reaction to finally form the layered polycrystalline PbSe film. The fabrication method has the advantages of simple process, low cost, and high controllability. The PbSe film fabricated by the method is composed of a lower dense polycrystalline cubic PbSe layer and an upper loose polycrystalline cubic PbSe layer, which can be widely used in the fabrication of components in the field of photoelectric conversion or thermoelectric conversion, such as infrared (IR) sensors, solar cells, laser emitters, and thermoelectric converters.

A method that includes selectively ejecting, from a first nozzle, a patterning material on to a surface of a substrate to define an area within to eject a first printable ammonium-based chalcogenometalate fluid; ejecting, from a second nozzle, the first printable ammonium-based chalcogenometalate fluid within the area defined by the patterning material to form a first layer of the printable ammonium-based chalcogenometalate fluid; and heating the first layer of printable ammonium-based chalcogenometalate fluid to dissipate the first printable ammonium-based chalcogenometalate fluid into a transition metal dichalcogenide having the form MX.sub.2.